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THE MEMORY ELEMENTS. Words in high-speed memory Read-write random-access memory.

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Presentation on theme: "THE MEMORY ELEMENTS. Words in high-speed memory Read-write random-access memory."— Presentation transcript:

1 THE MEMORY ELEMENTS

2 Words in high-speed memory

3 Read-write random-access memory

4 The Memory Units 1 b – 1 bit 1 Kb = 1024 (2 10 ) b – 1 kilobit 1 Mb = 1024 (2 10 ) Kb = 1048576 (2 20 ) b – 1 megabit 1 Gb = 1024 (2 10 ) Mb = 1073741824 (2 30 ) b – 1 gigabit 1 Tb = 1024 (2 10 ) Gb = 1099511627776 (2 40 ) b – 1 terabit 1 byte = one 8 bit word (a sequence of 8 bits at the same address) 1 B – 1 byte 1 KB = 1024 (2 10 ) bytes – 1 kilobyte 1 MB = 1024 (2 10 ) KB = 1048576 (2 20 ) B – 1 megabyte 1 GB = 1024 (2 10 ) MB = 1073741824 (2 30 ) B – 1 gigabyte 1 TB = 1024 (2 10 ) GB = 1099511627776 (2 40 ) B – 1 terabyte

5 Basic static memory cell

6 Linear- select SRAM

7 Decoders

8 Decoders condt

9

10 Two-dimensional static memory cell

11 Two-dimensional memory organization

12 Two-dimensional memory organization condt

13 Comparison of numbers of electronic elements used in one-dimensional and two-dimensional systems of memory Number of memory cells Linear selection Two- dimensional selection 1664 transistors16 transistors 409649152 transistors768 transistors 1 megabit (2 20 )  20 000 000 transistors  20 000 transistors

14 Bus for computer system

15 IC package of RAM chip

16 Interfacing chips to a bus

17 Layout for adding memory to a bus

18 Another IC package of RAM chip

19 Dynamic random-access memories

20 DRAM timing signals in normal and paging mode operation

21 Read-only memories

22 Read-only memories condt

23 Types of read-only memories MROM (Eng. Mascable ROM) PROM (Eng. Programmable ROM) EPROM (Eng. Erasable and programmable ROM) EEPROM (Eng. Electrically erasable and programmable ROM) An important application of EEPROM: Flash-BIOS


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