1. SpinValves by Quantum Mechanics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 1

2. SpinValve ferromagnetism is based on theoretical predictions by Slonczewski and Berger a decade ago. SpinValves comprise alternating nanoscale layers of FMs separated by a NM spacer. FM stands for ferromagnetic and NM for non-magnetic. Spin-polarized current is produced by passing un-polarized current through a first FM layer, the polarization unchanged as the current flows through the NM spacer. In the second FM layer, a giant magneto-resistance (GMR) is thought to transfer the spin angular momentum as a physical spin-torque, the process tending to produce parallel spins that significantly lower the GMR. Introduction 2 NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013

3. Problems The significant reduction in the GMR by the alignment of spins is not without controversy. The relatively rigid lattice shields the spins so that any transfer of spin-torque to the second FM is unlikely. Further, spin-torque propagates by phonons through the FM lattices, and therefore limiting spin-transfer to frequencies 100 ps. Electron spins observed to respond much faster. NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 3

4. Laser studies in femtomagnetism by Boeglin et al. show nanoscale FMs demagnetize on a sub-picosecond time scale (< 350 fs) far faster than phonons can respond. Spin transfer through the lattice therefore cannot be the mechanism for demagnetization Bigot et al. showed about 10 ps for the lattice to thermalize prompting Bovensiepen to suggest SpinValves de-magnetize by light noting* the dynamics are only observed while the laser field interacts with the FM * Similarity with the EM confinement of a TIR quasi-bound state, trapped in a potential well, but leaking to the outside world by tunneling. Alternatives NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 4

5. Provided the RI of the FM is greater than that of the adjacent NM spacers, non-thermal EM radiation at EUV levels is created by the QED induced frequency up-conversion of Joule heat to the TIR confinement frequency of the FM. RI = refractive index. EM = electromagnetic QED = quantum electrodynamics EUV = extreme UV, TIR total internal reflection Excitons (holon and electron pairs) are readily created by the QED induced photoelectric effect. Holons (positive holes) act as charge carriers that significantly reduce the GMR of the FM by a dramatic increase in photoconductivity. QED Induced Radiation NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 5

6. Theory Heat Capacity of the Atom Conservation of Energy TIR Confinement 6

7. Heat Capacity of the Atom 7 Nanostructures kT 0.0258 eV Classical Physics (kT > 0) QM (kT = 0) NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 In nanostructures, QM requires atoms to have zero heat capacity

8. NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 Conservation of Energy Lack of heat capacity by QM precludes Joule heat conservation in nanoelectroncs by an increase in temperature, but how does conservation proceed? Proposal Absorbed EM energy is conserved by creating QED photons inside the nanostructure - by frequency up - conversion to the TIR resonance of the nanostructure. 8

9. Since the RI of nanoelectroncs is greater than that of the surroundings, the QED photons are confined by TIR corresponding to a quasi-bound state Nanostructures ( films, wires, etc) have high surface to volume ratio, but why important? By QM, the EM energy absorbed in the surface of nanostructures provides TIR confinement of the QED photons. QED photons are spontaneously created by Joule heat dissipated in nanoelectronics. Simply, f = c/ = 2nd E = hf TIR Confinement 9 NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 For a spherical NP having diameter D, = 2D

10. NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 Electrical Response QED Photons and Excitons Exciton Response Mobility Resistance and Current 10

11. QED Photons and Excitons NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 QED Photon Rate P = Joule heat E = QED Photon energy  = Absorbed Fraction Exciton Rate Y = Yield of Excitons / QED Photon 11

12. Exciton Response NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 Where, Q E and Q H are number electrons and holons, V is the voltage  E and  H are electron and holon mobility Electrons Holons 12 For SpinValves, Ovshinsky effect, and 1/f Noise, V =  V o, For memristors, V = V o sin  t.

13. Mobility NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 13

14. Resistance and Current NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 14  = Conductivity  = Resistivity

15. NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 Applications SpinValves Briefly Memristors Ovshinsky Effect 1/f Noise 15

16. The QED induced switching is simulated for Alq3 film thicknesses of 10, 20, 50, and 100 nm. All films were assumed to have an initial GMR of R o = 1x10 6 ohms. A voltage V o = 1 V was applied for 10 ns followed by V o = -1 V for 10 ns The QED induced reduction in GMR is significant The 10 nm film resistance ratio R/R o is reduced to ~ 0.000624 or (R ~ 624 ohms) in < 1 ns. In contrast, magnetic induced GMR reductions for 125 nm Alq3 film at 100 K shows a GMR reduction of about 22% corresponding to R/R o = 0.78 SpinValves - Simulation NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 16

17. SpinValves - Resistance NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 GMR resistance change - Write and Read For +1 V write and -1 V erase cycle 17 Vo = + 1 VVo = -1 V

18. SpinValves - Charges NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 Holon charges - Write and Read For +1 V write and -1 V erase cycle 18

19. The 10 nm film resistance change predicted by the QED induced photoelectric effect in GST films suggests superconductivity already exists or at least may be approached at ambient temperature. Superconductive nanowires are proposed* to sense single photons from an external source. C. Soci, et al., “Nanowire Photodetectors,” J. Nanoscience and Nanotechnology, 10, 1-20, 2010 However, nanowires may be a natural QED induced superconductive interconnect in nanoelectronics. SpinValves - Conclusions NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 19

20. Memristors NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 d = 50 nm, GST mobility  H = 2x10 -6 cm 2 /V-s 20 QM creates Space Charge to change Memristor resistance ( HP claims Oxygen vacancies )

21. Ovshinsky Effect NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 Alq3 Mobility  = 2x10 -5 cm 2 /V-s, Vo = 1 V, Ro = 1 M  21 PCRAM resistance changes from QED Induced charge ( Melting is ambiguous)

22. 1/f Noise in Nanowires NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013 Step in QED Induced Charge  Step in Current  Step in Power Fourier Transform of Step in Power gives 1/f Noise  /2-  /2 X(t) t  22 QM creates holons as current enters nanowire ( Hooge relation based on free electrons )

23. By QM, submicron nanoelectronic circuit elements: SpinValves Memristors Ovshinsky Devices Nanowire Interconnects do not increase in temperature because Joule heat is conserved by the creation of charge. However, the QED induced charge may significantly increase the 1/f noise. Conclusions 23 NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013

24. Questions & Papers Email: nanoqed@gmail.com http://www.nanoqed.org 24 NANOSMAT-Asia : Inter. Conf. Surf., Coat., Nano-Materials; Wuhan, CHINA, Mar. 13-15, 2013