1. J.Zhang a, S.H.Cho b, and J.M.Seo b a Department of Physics, Yunnan University, Kunming 650091,P.R.China b Department of Physics, Chonbuk National University, Chonju 561-756, Korea Growth and disorder of Ag nanowires on Si(5 5 12)-21 surface Growth and disorder of Ag nanowires on Si(5 5 12)-2  1 surface Structure of clean Si(5 5 12)-2  1 Steps and kinks on clean Si(5 5 12)-2  1 Growth of Ag nanowires on Si(5 5 12)-2  1 Contents

2. Side view of the silicon crystal lattice between the (001) and (111) planes 001 111 113 115 117119 112 113 114 115 116 1111 1113 335 113 3311 3313 115 3317 223112 225 113 227114 229 557 559 5511 5513 113 5517 5519 334 335112 337 338 113 3310 77977117713 7715 7717 7719113 445223447 112449225 4411 99119913335 9917 9919 337 9923 556 557 558 559 1125511 117118 1115 5512 337 30.5 54.7 0 30.5 (hhk) degree L(nm) 001 0 0.36 225 29.5 2.21 7717 30.2 3.78 5512 30.5 5.35 337 31.2 1.57 (5 5 12) = (337) x 2 + (225) (7 7 17) = (337) + (225)

3. Structural model of Si(5 5 12)-2×1 surface [-110] [66-5] (5 5 12) (7 7 17) dimer

4. STM images of clean Si(5 5 12)-2×1 surface Reconstruction: Cooling down at ~2  C /sec. from 700  C to RT Filled-state STM image: I= 0.6nA, Bias = -2.5V, Rotation= 30  Topography 200Å×200Å [ 1 1 0 ] [ 6 6 5 ] 2  1 unit cell 0.77×5.35nm Error signal 200Å×200Å [ 6 6 5 ] [ 1 1 0 ] π -chains Tetramer

5. 3-D STM image of clean Si(5 5 12)-2×1 (5 5 12) = 2×(3 3 7) + (2 2 5) = (3 3 7) + (7 7 17) 200Å×200Å (5 5 12)  -chains tetramers (337) (225) (337)’ extra (337) (7 7 17) adsorbed dimers [ 1 1 0 ] [ 6 6 5 ]

6. Steps and kinks on Si(5 5 12)-2×1 surface Error signal: 1000Å × 1000Å Error signal: 350Å × 350Å [ 1 1 0 ] [ 6 6 5 ] Si(1 1 3) Lower terrace Upper terrace Step A Step B Step A

7. Wide Si(7 7 17) domain parasitic on Si(5 5 12) surface 500Å  500Å (5 5 12) (7 7 17) step (5 5 12) [66-5] [-110] Lower terrace upper terrace

8. Topography 100 Å x 100 Å  T D   T Error signal 100 Å x 100 Å  T D   T  T D     T  T D    T File name : 09060036.HDF File name : 09060035.HDF Comparison of topography and error signal images of Si(7 7 17)

9. Double step fabrication of Ag nanowires Ag rows 500Å×500Å [-110] [66-5] Ag rows Si(5 5 12) For lower coverage(<0.1ML) Experimental Ag deposited on Si(5 5 12)-2  1 Anneal(double steps): 1. 500  C, 10min 2. 600  C RT, 36min Ag row growth Ag rows grew uniformly Ag row distribution not even Ag induced a new reconstruction Ag rows on Si(5 5 12) : 0.03ML

10. Comparison of clean Si(7 7 17) and Ag:Si(7 7 17) system Clean Si(7 7 17) Ag : Si(7 7 17) system tetramer rows (7 7 17) (225) (337) (225) (7 7 17) Ag chains 0.1ML 2×2× 3×3× disorder

11. STS of Ag nanowires on Si(5 5 12)-2×1 surface

12. Si(111)-7×7 surface measured by STM.

13. STM image and simulation for Ga 6 /Si(111)-7×7 surface +1.6 eV J.F.Jia, Phys. Rev. Lett.

14. 5000Å X 5000Å 4277Å X 4277Å 5000Å X 5000Å [ 1 1 0 ] [ 6 6 5 ] [ 1 1 0 ] [ 6 6 5 ] [ 1 1 0 ] Steps on clean Si(5 5 12)-2×1 surface 120º

15. Steps on clean Si(5 5 12)-2×1 surface 5000ÅX5000Å 12000ÅX12000Å 10000ÅX10000Å a b c  Flashing T max : 1200 0 C  Reconstruction T max : 1000 0 C  Bass pressure:(a)1.1x10 -10 mb;(b)(c) 2.6x10 -10 mb

16. Steps and kinks on clean Si(5 5 12)-2  1 surface

17. Step flows on clean Si(5 5 12)-2  1 surface

19. Si(001) 邻晶面上的两种台面和台阶

20. Kinetics: Layer-by-Layer Growth DiffusionNucleationGrowth - High Flux - Low Temperature - Low Step Density

21. Kinetics: Step-Flow Growth DiffusionStickingFlow - Low Flux - High Temperature - High Step Density

22. Step flow: A 2D analog of 3D growth

23. Breakdown of Step Flow Growth

24. Summary Nano Scale --- minimizing elastic strain energy self-organization of steps (quantum wires) and islands (quantum dots) Si(5 5 12)-2×1 surface Ag nanowires on Si(5 5 12)-2×1 surface form along tetramer rows where the binding energy is relatively low 1D Ag nanowires with disorder structuers show metal-insulator transition (Anderson effect)