1. Implantation of N-O in Diamond
T.Matindi, Dr. S.R. Naidoo
DST-NRF Centre of Excellence in Strong Materials
Diamond, Thin Hard Films & Related Materials

2. Outline Introduction Aim and objectives Experimental techniques
Characterization techniques
Summary and conclusions

3. Introduction Properties of diamond : Large energy gap around 5.5 eV.
High carrier mobilities.
High breakdown field strength.
Highest thermal conductivity.
Low dielectric constant.
Broad optical transparency from UV to IR

4. Some potential application of diamond
Function
Field of application
High temperature semiconductor
Automobile and aircraft engines
High frequency/high power transistors
High speed transistors, High speed data process
High voltage transistors
Electric power control
X-ray windows
IR windows
X-ray lithography masks and IR windows
Light emission
LEDs and laser in UV region, white luminescence and light source for printers.
Pressure sensing
Pressure sensor at high temperature

5. Conditions for manufacturing diamond-based electronic devices
P-type doping diamond (achieved using boron as an acceptor impurity)
N-type doping diamond (achieved using phosphorus)
Shallow dopants (both are substitutional dopants and are deep lying acceptor and donor states.)

6. The doping of diamond N-doping Phosphorus Nitrogen P-doping Boron
Activation energies for some impurities in diamond.

7. Theoretical work
Substitution of N-O into the diamond lattice is suggested to induce a shallow defect level below the conduction band edge which leads to n-type conductivity [1].
[1]. J. Lowther, “Substitutional oxygen-nitrogen pair in diamond,” Physical Review B, vol. 67, no. 11, p , 2003.

8. Aim and objectives
To explore the possibility of achieving n-type conductivity in diamond.
To do the implantation of N-O into the diamond lattice.
To investigate the interaction between nitrogen and oxygen in the diamond as well the related defects.

9. Experimental techniques
Ion implantation:
The A2F ion implanter (iThemba LABS, Gauteng)
Ions : Nitrogen and Oxygen.
Energy range : from 10 keV to 170 keV.
Fluences ranging: from 1.0× ions/ c m 2 to 5.0× ions/c m 2 .

10. Characterization techniques
Optical spectroscopy.
Electronic measurements.

11. Summary and conclusions
To explore the possibility of achieving n-type conductivity in diamond.
To do the implantation of N-O into the diamond lattice.
To investigate the interaction between nitrogen and oxygen in the diamond as well the related defects.
Optical spectroscopy and electronic measurements

12. Thank you
Merci

13. Setup for the generation of the VUV laser light