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JEOL JBX-9300FS Electron Beam Lithography System Training

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Presentation on theme: "JEOL JBX-9300FS Electron Beam Lithography System Training"— Presentation transcript:

1 JEOL JBX-9300FS Electron Beam Lithography System Training
6/17/09, revision 11

2 Course Outline 6/17/09, revision 11 Explain hardware
column, lenses, amplifiers field, chip, subfield shot pitch, beam diameter D = (I * t)/A Calibration AE & BE marks INITAE, INITBE, PDEFBE, SUBDEFBE, DISTBE HEIMAP Substrate various cassettes global & chip mark alignment virtual chip mark height detection Pattern Preparation CAD file preparation linkCAD conversion file transfer JBXFiler Job Deck & Schedule File Schd and Array check ALD & Exposure Resist Exposure & development positive & negative resists contrast liftoff, etching Proximity Effect Website 6/17/09, revision 11

3 Why E-beam Lithography?
exceeds patterning capability of optical lithography easily pattern sub-micron features MiRC has demonstrated 6.5nm features patterns rapidly created from CAD file no mask necessary like optical lithography rapid turn around on design modifications, ideal for research You should not be using Ebeam Lithography to pattern primarily micron size features. 6/17/09, revision 11

4 JBX-9300FS key features 4nm diameter Gaussian spot electron beam
50kV/100kV accelerating voltage 50pA – 100nA current range 50MHz scan speed +/- 100um vertical range automatic focus +/- 2mm vertical range manual focus ZrO/W thermal field emission source vector scan for beam deflection max 300mm (12") wafers with 9" of writing area < 20nm line width writing at 100kV < 20nm field stitching accuracy at 100kV < 25nm overlay accuracy at 100kV 6/17/09, revision 11

5 Generic Block Diagram Electron Opics reference marks stage Gun Control
Blanking Deflection Electron Optics Pattern Proc. and control Stage Computer x-interferometer y-interferometer stage motor Electron Opics reference marks 6/17/09, revision 11

6 Column 6/17/09, revision 11 ZrO/W emitter Suppressor Electron gun
First anode Second anode Acceleration electrodes Ground anode First alignment coil Second alignment coil Blanking electrode Blanking aperture Second lens Third Zoom lenses Dynamic focus correction electrode Third alignment coil Dynamic astigmatism correction electrode Subsidiary deflector (SUBDEF) Electromagnetism astigmatism correction electrode Main deflector (PDEF) Backscattered electron detector Objective aperture Objective Workpiece surface 6/17/09, revision 11

7 Beam & Stage Position Stage position accuracy = λ / 1024 = 0.62nm
6/17/09, revision 11

8 PDEF & SUBDEF 50 6/17/09, revision 11

9 Top View of Stage 6/17/09, revision 11

10 Side View 6/17/09, revision 11

11 Stage w/o Cassette laser mirrors cassette goes here
6/17/09, revision 11

12 Wafer Cassette 6/17/09, revision 11

13 Field Stitching 500 µm (100kV) 500 µm (100kV) 6/17/09, revision 11

14 Within Field Writing Vector scan 6/17/09, revision 11

15 4” Wafer with Chips 2mm 2mm 6/17/09, revision 11

16 Example “Chip” Subfields 4um 4um 500um Field 500um Chip
beam diameter Chip 6/17/09, revision 11 shot pitch

17 Objective Aperture larger aperture = larger beam diameter, more current smaller aperture = higher resolution aperture beam diameter min resolution current range 3,4,5 4 – 9nm < 20nm 50pA – 2nA 6 8 – 14nm 30nm 2nA – 7nA 7 30nm 60nm 10nA Most of the time, the 9300 will be set to aperture #3 and 2nA beam current. 6/17/09, revision 11

18 Beam diameter as a function of current & aperture
6/17/09, revision 11

19 Dose Equation where D = dose (µC/cm2) I = current (A) t = time (sec)
A = exposure area (cm2) 6/17/09, revision 11

20 time calculator at http://nanolithography.gatech.edu/tcalc.php
Job Time Estimate if D = 200 µC/cm2 A = 1 cm2 I = 2nA then t = 27 hours 46 min time calculator at Ebeam lithography is very slow compared to optical lithography. Therefore you need to be careful about considering the amount of time it will take to expose your design. 6/17/09, revision 11

21 Shot Pitch Shot pitch is equivalent to pixel value – the smaller the shot pitch, the better the feature definition Shot pitch is limited by scanning frequency of the SUBDEF (max = 50MHz) 6/17/09, revision 11

22 Effect of Shot Pitch Energy deposited in resist
Consider a line is exposed with 200uC/cm^2 dose. Depending on the number of pixels that the line-width is divided into, the line edge roughness (LER) and line-width will vary. x The graph at right shows the cross-section of energy deposition profile of a line with 1,2,4 and n pixels. 6/17/09, revision 11

23 Minimum Shot Pitch Calculation
t = D.A/I A = area of pixel = a2 t = 1/fclk where fclk is the maximum scanning frequency of the amplifier  a = √I/(fclk.D) 6/17/09, revision 11

24 Faraday Cup 6/17/09, revision 11

25 6/17/09, revision 11 Explain hardware column, lenses, amplifiers
field, chip, subfield shot pitch, beam diameter D = (I * t)/A Calibration AE & BE marks INITAE, INITBE, PDEFBE, SUBDEFBE, DISTBE HEIMAP Substrate various cassettes global & chip mark alignment virtual chip mark height detection Pattern Preparation CAD file preparation linkCAD conversion file transfer JBXFiler Job Deck & Schedule File Schd and Array check ALD & Exposure Resist Exposure & development positive & negative resists contrast liftoff, etching Proximity Effect Website 6/17/09, revision 11

26 Stage faraday cup AE, BE mark SEM sample 6/17/09, revision 11

27 Absorbed Electron Detection
6/17/09, revision 11

28 INITAE metal grid y - scan x - scan ds/dx ds/dy pn junction
mark center position 6/17/09, revision 11

29 Backscattered Electron Detection
6/17/09, revision 11

30 INITBE Au cross on Si substrate y - scan x - scan ds/dx ds/dy
mark center position 6/17/09, revision 11

31 PDEFBE, SUBDEFBE, DISTBE mark detection
6/17/09, revision 11

32 PDEFBE & SUBDEFBE gain 4 um 500 um 4 um 500 um rotation PDEFBE
1 2 3 top 482um 4 um 500 um 482um 4 6 rotation 5 left right 7 8 9 bottom PDEFBE 4 points measured x & y gain correction x & y rotation correction SUBDEFBE 9 points measured x & y gain correction x & y rotation correction shift 6/17/09, revision 11

33 DISTBE Field Distortion Correction
6/17/09, revision 11

34 Height Detection 6/17/09, revision 11

35 HEIMAP measures height across wafer on defined array positions (adjustable by user) takes average height and uses that for focus value for writing everywhere appropriate for 100pA & 1nA current not appropriate for 10nA – use virtual chip mark height detection 6/17/09, revision 11

36 6/17/09, revision 11 Explain hardware column, lenses, amplifiers
field, chip, subfield shot pitch, beam diameter D = (I * t)/A Calibration AE & BE marks INITAE, INITBE, PDEFBE, SUBDEFBE, DISTBE HEIMAP Substrate various cassettes global & chip mark alignment virtual chip mark height detection Pattern Preparation CAD file preparation linkCAD conversion file transfer JBXFiler Job Deck & Schedule File Schd and Array check ALD & Exposure Resist Exposure & development positive & negative resists contrast liftoff, etching Proximity Effect Website 6/17/09, revision 11

37 Available Cassettes Wafer Masks Pieces
75mm, 100mm, 150mm, 200mm diameter 300mm can be purchased for up to 9” square writing area Masks 5” mask, 6” mask Pieces minimum 3 x 5mm piece 6/17/09, revision 11

38 4” Wafer Cassette 6/17/09, revision 11

39 Backside of Wafer Cassette
6/17/09, revision 11

40 Global & Chip Mark Detection
6/17/09, revision 11

41 6/17/09, revision 11 Explain hardware column, lenses, amplifiers
field, chip, subfield shot pitch, beam diameter D = (I * t)/A Calibration AE & BE marks INITAE, INITBE, PDEFBE, SUBDEFBE, DISTBE HEIMAP Substrate various cassettes global & chip mark alignment virtual chip mark height detection Pattern Preparation CAD file preparation linkCAD conversion file transfer JBXFiler Job Deck & Schedule File Schd and Array check Resist Exposure & development positive & negative resists contrast liftoff, etching Proximity Effect Website 6/17/09, revision 11

42 CAD file conversion AutoCAD .DXF file linkCAD or GDSII file CADENCE
JEOL01 file JBXFILER JEOL52 v3.0 file 6/17/09, revision 11

43 SCHD execution specifies specifies 1. wafer cassette window
1. JEOL52 v3.0 pattern file 2. how to arrange on wafer 3. shot modulation 4. type of calibration 5. beam current specifies 1. wafer cassette window 2. calibration file 3. base dose 4. job deck file(s) to use 5. shot pitch 6/17/09, revision 11

44 Pattern Preparation 6/17/09, revision 11

45 JBXFILER Pattern Preparation
6/17/09, revision 11

46 6/17/09, revision 11 Explain hardware column, lenses, amplifiers
field, chip, subfield shot pitch, beam diameter D = (I * t)/A Calibration AE & BE marks INITAE, INITBE, PDEFBE, SUBDEFBE, DISTBE HEIMAP Substrate various cassettes global & chip mark alignment virtual chip mark height detection Pattern Preparation CAD file preparation linkCAD conversion file transfer JBXFiler Job Deck & Schedule File Schd and Array check Resist Exposure & development positive & negative resists contrast liftoff, etching Proximity Effect Website 6/17/09, revision 11

47 Negative/Positive Resist
exposing e-beam exposing e-beam substrate NEGATIVE POSITIVE select appropriate resist for process and to minimize writing time 6/17/09, revision 11

48 resist vs. dose curves resist thickness resist thickness dose dose
negative more sensitive positive resist thickness resist thickness less sensitive dose dose more contrast resist thickness less contrast dose 6/17/09, revision 11

49 Resists on hand at MiRC Positive resists Negative resist ZEP520A
good etch resistance fast good resolution (~ 10nm) expensive ($3/mL) PMMA cheap ($1/mL) good for liftoff high resolution (< 10nm) poor etch resistance slow Negative resist XR (HSQ) good etch resistance (HSQ is basically SiO2) excellent resolution (6.5nm) slow expensive ($4/mL) ma-N 2403 (Novolak) good etch resistance optical DUV exposable faster than HSQ moderately priced ($2/mL) poor adhesion to quartz 6/17/09, revision 11

50 Resist Comparison 6/17/09, revision 11

51 Metal Liftoff evaporate metal onto strip resist patterned resist
6/17/09, revision 11

52 6/17/09, revision 11 Explain hardware column, lenses, amplifiers
field, chip, subfield shot pitch, beam diameter D = (I * t)/A Calibration AE & BE marks INITAE, INITBE, PDEFBE, SUBDEFBE, DISTBE HEIMAP Substrate various cassettes global & chip mark alignment virtual chip mark height detection Pattern Preparation CAD file preparation linkCAD conversion file transfer JBXFiler Job Deck & Schedule File Schd and Array check Resist Exposure & development positive & negative resists contrast liftoff, etching Proximity Effect Website 6/17/09, revision 11

53 Electron Solid Interactions
electrons forward scatter in resist (alpha) electrons backscatter off substrate (beta) Causes dose to spread away from where you want it to go, and expose areas you don’t want to be exposed 6/17/09, revision 11

54 Forward Scattering (α)
as electrons enter resist, they experience small angle scattering, effectively broadening the initial beam diameter forward scattering is minimized by using the thinnest possible resist and highest accelerating voltage df = effective beam diameter (nm) Rt = resist thickness (nm) Vb = acceleration voltage (kV) 6/17/09, revision 11

55 Backscattering (β) as electrons pass thru resist and enter substrate, many will undergo large angle scattering events these electrons may return back into the resist at a significant distance from the incident beam, causing additional resist exposure → this is called the proximity effect 6/17/09, revision 11

56 Electron Solid Interaction
Source: SPIE Handbook of Microlithography, Section 2.3 Electron-Solid Interactions 6/17/09, revision 11

57 Simulated Electron Energy Profile
Source: SPIE Handbook of Microlithography, Section 2.3 Electron-Solid Interactions 6/17/09, revision 11

58 Alpha & Beta (for 0.5um resist on Si substrate)
Beam energy (keV) α (um) β (um) η 5 1.33 [0.18] [0.74] 10 0.39 [0.60] 20 0.12 2.0 0.74 50 0.024 9.5 100 0.007 31.2 backscattered electrons have large range at 100kV!!! 6/17/09, revision 11

59 Influence of Proximity Effect on Pattern Generation
6/17/09, revision 11

60 Line Edge Deviations due to Proximity Effect
6/17/09, revision 11

61 Proximity Effect Correction by Dose Modulation
6/17/09, revision 11

62 Proximity Effect Correction by Shape Modulation
original CAD pattern simulated dose profile calculated shape modification to achieve desired line 6/17/09, revision 11

63 Dose Dependencies required dose pattern size required dose
pattern density required dose resist thickness acceleration voltage required dose substrate AMU required dose 6/17/09, revision 11

64 Example of Proximity Effect
large exposed area next to small lines causes overexposure 6/17/09, revision 11

65 How to correct in my CAD file?
separate small features from large features by placing on different layers in AutoCAD then assign a different datatype to each layer in linkCAD then assign different doses (shot modulation) to each datatype try a wide range of doses on your first exposure use SEM image to make careful dimension measurements adjust dose as necessary and repeat exposure 6/17/09, revision 11

66 (exception: 2nm line group has same spacing as 10nm line group)
Test Pattern line width 50 x 50um 2nm 10nm 20nm 50nm 100nm 200nm 500nm 1000nm 1 x line 2 x line 3 x line 4 x line 5 x line 10 x line 10um 20um 30um 40um 50um space width (exception: 2nm line group has same spacing as 10nm line group) 6/17/09, revision 11

67 1um lines in ZEP at various pitch
6/17/09, revision 11

68 Required dose for 1um line in ZEP as a function of grating
6/17/09, revision 11

69 6/17/09, revision 11 Explain hardware column, lenses, amplifiers
field, chip, subfield shot pitch, beam diameter D = (I * t)/A Calibration AE & BE marks INITAE, INITBE, PDEFBE, SUBDEFBE, DISTBE HEIMAP Substrate various cassettes global & chip mark alignment virtual chip mark height detection Pattern Preparation CAD file preparation linkCAD conversion file transfer JBXFiler Job Deck & Schedule File Schd and Array check Resist Exposure & development positive & negative resists contrast liftoff, etching Proximity Effect Website 6/17/09, revision 11

70 Website 6/17/09, revision 11

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