1. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona First Measurements on 3D Strips Detectors Irradiated at Irradiated at 10 16 -10 17 n/cm 2 First Measurements on 3D Strips Detectors Irradiated at Irradiated at 10 16 -10 17 n/cm 2 22 nd RD50 Workshop June 3 – 5, 2013 Albuquerque, NM - June 3 – 5, 2013 22 nd RD50 Workshop June 3 – 5, 2013 Albuquerque, NM - June 3 – 5, 2013 Virginia Greco - IMB-CNM, Barcelona (Spain) Marta Baselga, Celeste Fleta, Manuel Lozano, Giulio Pellegrini, David Quirion Virginia Greco - IMB-CNM, Barcelona (Spain) Marta Baselga, Celeste Fleta, Manuel Lozano, Giulio Pellegrini, David Quirion

2. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona Geometry of the 3 D Strip Detectors Biasing pads 80μm 50 channels, 80μm strip pitch 280 μm of thickness 180x75 μm passivation openings for wire bonding 100μm 330μm 46μm June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia

3. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 p-type and n-type 3D detectors from different runs were irradiated at various fluences in Ljubljana. #RunStrip lengthTypeFluence 15150-3 S25mmp-type5·10 16 n/cm 2 25150-3 S45mmp-type8·10 16 n/cm 2 34223-810mmp-type10 17 n/cm 2 44223-210mmp-type10 17 n/cm 2 54222-210mmn-type10 17 n/cm 2 All detectors were annealed for 8 minutes at 80 o C. Measurements with probe station:  I–V curves at different temperatures  C–V curves at T = - 40 o C Greco Virginia

4. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona I-V Curves () I-V Curves (10 16 n/cm 2 ) p-type Size: 5mm Fluence : 5·10 16 n/cm 2 p-type Size: 5mm Fluence : 8·10 16 n/cm 2 June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia

5. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona C-V Curves () C-V Curves (10 16 n/cm 2 ) p-type Size: 5mm Fluence : 5·10 16 n/cm 2 p-type Size: 5mm Fluence : 8·10 16 n/cm 2 June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 T = - 40° C f = 10 kHz ? ? Greco Virginia

6. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona I-V Curves () I-V Curves (10 17 n/cm 2 ) p-type Size: 10mm Fluence : 10 17 n/cm 2 p-type Size: 10mm Fluence : 10 17 n/cm 2 June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia

7. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona C-V Curves () C-V Curves (10 17 n/cm 2 ) p-type Size: 10mm Fluence : 10 17 n/cm 2 p-type Size: 10mm Fluence : 10 17 n/cm 2 June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 T = - 40° C f = 10 kHz ? ? Greco Virginia

8. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona I-V & C-V Curves (-n-type) I-V & C-V Curves (10 17 n/cm 2 -n-type) n-type Size: 10mm Fluence : 10 17 n/cm 2 June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 T = - 40° C f = 10 kHz Greco Virginia

9. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona Characterization with the ALIBAVA Readout System Characterization with the ALIBAVA Readout System June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia

10. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona The ALIBAVA Setup Outline Lab Inside the box Daughterboard (Beetle chip) Daughterboard (Beetle chip) Trigger Board (diode) 3D Pixel Sensors (230 μm thick) 3D Pixel Sensors (230 μm thick) June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia

11. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona R1 = 1MΩ R2 = 1MΩ R3 = 10MΩ C1 = C2 = C3 = 10pF 123 N DC strips R1 C1 R2 R3 C2 C3 PCB board V AC Pitch Adaptors In order to perform measurements on the 3D irradiated detectors (strips and pixels) we need AC pitch adaptors. Daughter board DC Detector AC Fan In 1cm RC filter June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia

12. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona Fabrication run of AC pitch adaptors in progress.  Expected for the end of July Mask AC Fan-ins Spare room used for fabricating chip heaters June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia

13. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona Detector bias Chip Detector Glass substrate 1st metal Poly resistor 2nd metal 300μm AC Pitch Layout Oxide/Nitride/Oxide thickness (for the capacitor) Resistance of polySi Capacitance Area Capacitance 200 nm 1 MΩ 50 x 4500 μm 2 40 pF June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia

14. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona Routing for Pixels Routing FE-I4 Atlas Pixels to read with Beetle chip (ALIBAVA system) DC coupled pads, pitch 80 μm June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia

15. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona Preliminary Measurements on Non-Irradiated 3D FE- I 4 Pixel Detectors Preliminary Measurements on Non-Irradiated 3D FE- I 4 Pixel Detectors June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia

16. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona Measurements on Non-Irradiated 3 D Pixels 30V 20V 15V 10V 5V 3V 0,5V Pulse reconstructed with the ALIBAVA System S/N >5 20V The rise time of the signal is given by the Beetle chip. The relative peak position is due to the variation of the collection velocity with the applied voltage. β-source: Sr-90  MIPs; External trigger ( in collaboration with IFIC) June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia

17. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona Collection Relative Time and Charge Collected as a function of the detector power supply June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia

18. ALBA Synchrotron – 17 June 2010 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona Conclusions & Future work A primary electrical characterization of irradiated 3D strips sensors has been performed. The ALIBAVA readout system has been used to characterize non-irradiated 3D FE-I4 pixel sensors. We foresee to finish by the end of June the fabrication process of the AC pitch adaptors; Once the AC adaptors are ready, we will proceed by characterizing irradiated 3D strips and pixel sensors with the ALIBAVA system: charge collection studies with MIPs; annealing studies; laser measurements. June 3 – 5, 2013 22 nd RD50 Workshop - Albuquerque, NM - June 3 – 5, 2013 Greco Virginia