1. Basic MOSFET I-V characteristic(1/3) High circuit operation speed  large I ON small Subthreshold Slope (SS) Low power consumption  small I OFF (Silicon-on-insulator or Fully deplete device) 1

2. Basic MOSFET I-V characteristic(2/3) 2

3. Basic MOSFET I-V characteristic(3/3) 3

4. CMOS Technology Trend 4 22nm 2011 2009 FinFETS Current Si-based technology scaling innovations ▬ Mobility booster: Uniaxial Compressive Strain  SiGe S/D for p-FET ▬ Gate leakage reduction: High-k / Metal Gate ▬ Short Channel Effect suppression: FinFETs High mobility substrate: — Ge

5. 5 Characteristics of (111) Ge n+/p Diodes  The high resistivity substrates have ideality factor (~ 1.1) but low on/off ratio.  The high on/off ratio ~ 10 5 of low resistivity substrates is probably due to the reduction of diffusion current. 55

6. 6 Transfer and Output Characteristics of (111) Ge n-MOSFET  The S.S. is ~140mV/decade with on/off ratio ~ 8 × 10 4 for Is.  Ideal output characteristics 66

7. 7 Effective Electron Mobility of (111) Ge n-MOSFET  The peak mobility reaches 2200 cm2/V-s owing to the suppression of Coulomb scattering using low doping Ge substrates.  As substrate doping concentration increases, lower electron mobility is observed. 77