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Why do we put the micro in microelectronics?
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Why Micro? 1.Lower Energy and Resources for Fabrication 2.Large Arrays 3.Minimally Invasive 4.Disposable 5.Smaller Time Scales 6.Lower Cost What about the Physics?
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Scaling at the Microscale Not all properties scale in the same way! Volume Forces Gravity Inertia Mass Surface Forces Surface Tension Viscosity Heat Loss
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Animal Kingdom Larger Animals Limited number Limited environments Slow Gravity limited Small Animals Heat loss size 2 Heat generation size 3 Large energy intake (food)
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Why can’t I walk on water? weight scales as l 3 surface tension scales as l As animals become smaller, weight decreases more rapidly than surface tension.
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Why can’t I lift a car? weight scales as l 3 strength scales as l 2 ants can carry 50 time their weight a human shrunk to ant size could carry 300 times his/her own weight an ant increased to human size will not be able to support it’s own weight
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The Industrial Revolution
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Example: Digital Mirrors Digital Light Processing (DPL)
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http://www.dlp.com/
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Digital Light Processing: A New MEMS-Based Technology By Larry Hornbeck
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Systron Donner Inertial Division
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Accelerometer: Analog Devices Inc. Commercially available two-axis accelerometer Mass Acceleration direction Anchor Displacement sensor Support Arms
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A Polysilicon Accelerometer (2 Microns Thick) Mass Support Arms Sensing Electrodes Support arms are 2 microns square and ~ 100 microns long From John Yasaitis, Analog Devices Inc
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Closeup of ADI Accelerometer From John Yasaitis, Analog Devices Inc
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Accelerometer
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From John Yasaitis, Analog Devices Inc
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Why silicon?
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Silicon Crystalline Materials Regular arrangement of atoms with long range order Many Properties Depend on Atomic Structure
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22 Silicon Si semiconductor 5 silicon atoms in a unit cell Diamond lattice Covalent bonds 14 electrons 4 valence electrons Silicon molecules: http://www.eere.energy.gov/pv/simolecule.html 0.543 nm0.235 nm Si electronsholes
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Integrated Circuits in 1958 Jack Kilby at Texas Instruments
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Integrated Circuits in 1962 RTL Logic (Noyce and Hoerni)
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Integrated Circuits in 1965 Operational Amplifier, Fairchild ua 709
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Integrated Circuits in 1991 Power PC, AIM (Apple-IBM-Motorola Alliance)
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Today’s Microelectronics & MEMS Analog Devices, Accelerometers and Gyroscopes
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Decrease in Minimum Feature Size with Time (Moore’s law)
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Clean Room Classification English system: Numerical designation of the class is maximum allowable number of particles that are 0.5 m and larger per cubic foot of air. Metric system: Numerical designation of the class is taken from the Logarithm (base 10) of the maximum allowable number of particles that are 0.5 m and larger per cubic foot of air IC is very sensitive to particles. It usually requires Class 10 or better MEMS is more robust to particulates
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Microfabrication Silicon Oxidation Photoresist Deposition Masking and Exposure Figures from May and Sze
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Photoresist Development Si02 etching Photoresist Cleaning Doping Metallization Patterning Figures from May and Sze
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Dry Oxidization : Si (solid) + O 2 (gas) SiO 2 (solid) Wet Oxidization: Si (solid) + 2H 2 O (gas) SiO 2 (solid) + 2H 2 (gas) Thermal Oxidization
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Photolithography: Pattern Transfer The remaining image after pattern transfer can be used as a mask for subsequent process such as etching, ion implantation, and deposition.
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Doped Silicon N- doped P- doped Silicon molecules: http://www.eere.energy.gov/pv/simolecule.html Si P B free electrons bound electrons holes
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Diffusion Constant source – High surface concentrations, shallow, "deposition“ Limited source – Low surface concentrations, deep, "drive-in"
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Ion-implantation
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Thermal Evaporator Pump down to 1 torr ( 1 torr = 1 mmHg) Place wafers upside down to reduce particles Heat sources until white hot Low pressure = long mean-free- path (i.e., directional deposition) Use shutter for better timing Thin Film Deposition
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LIGA: electroplating nickel www.me.mtu.edu/~microweb
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http://mems.sandia.gov/gallery/images.html
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