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3D IC’s for Mobile Computing

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Presentation on theme: "3D IC’s for Mobile Computing"— Presentation transcript:

1 3D IC’s for Mobile Computing
GSA/ITAC April 2011 Paul Kempf

2 3D IC’s for Mobile Computing (or Mobile Computing = Smartphone evolution)
Smartphone trends driving 3D IC’s Technology for 2.5D & 3D Through Silicon Via (TSV) for Memory Interposers & Wafer Level Packages Heterogeneous Integration Embedded silicon 10 years in 2

3 Smartphone Component Footprint
Mainstream Smartphone fewer IC’s each year integration into a few subsystems High-End Smartphone die size limited SoC’s integration has not kept pace with feature race handhold size contraint PCB Area (mm2) Year

4 Torch 9800 uUSB connector Audio Codec SIM Card Holder WiFi/BT
uSD Card Holder UMTS PA EDGE Transceiver RF Switch SAW Filters EDGE PA Side 2 eMMC GPS PMIC Analog BaseBand ISP RF PMIC UMTS Transceiver uP and Memory EDGE Filters

5 Smartphone Part Count Mainstream Smartphone high level integration
lower cost increasing performance High-End Smartphone mobile computing platform packed with features embedded memory many radio connectivity sensors cameras time-to-market is key Component Count (#) Year

6 High-End Memory Performance

7 Lesson from Compute Servers
Power density driving 3D integration for servers Mobile devices have extreme thermal constraints - How long until mobile follows servers? BiCMOS to CMOS analogy

8 Integration is dead Long live (3D) integration
Hybrid/Ceramic/Glass Mixed Semiconductor Technology 3DIC Number of die in package RF CMOS 2.5D Mixed Signal PoP SiP SoC NOW Year (courtesy Yuan Xie, PENNSTATE)

9 3D Applications in Mobile
Memory Speed Power Imaging Sensitivity RF Efficiency Power Mgt Size Connectivity Size

10 TSV Memory Stack LPDDR2 with TSV stack Applications Processor with TSV
(source: Texas Instruments) Design standards required to scale-up supply base mBump layout Array configuration Pin Assignments

11 Heterogeneous Integration
Silicon interposer advantages Reduced die complexity Mixed technologies Fewer IO Lower power Wide interfaces Mechanical Strength (source: Amkor Technology, Inc.)

12 Cost-Efficient Heterogeneous Stacking
Heterogeneous integration is usually expensive 3D stacking: cost-efficient for heterogeneous integration (Courtesy: Borkar, Intel) (Courtesy: Yuan Xie, PENNSTATE)

13 Silicon Embeded Substrate
Space saving / Miniaturization Reduction of IC bump pitches potentially leads to size reduction of the IC SESUB can take over redistribution Low height substrate of max. 300µm incl. the embedded ICs Excellent EMI performance, good heat dissipation, high reliability Roadmap to embed Thin-Film inductors, Thin-Film capacitors and other passive components Integrated Shielding (source: TDK-EPC Corporation)

14 Back Grinding Half Dicing Bumping
22. März 2017 SESUB Process Flow Back Grinding Half Dicing Bumping (source: TDK-EPC Corporation)

15 Plating Via Hole Chip Mounting Lamination Preparing L1-L2
22. März 2017 SESUB Process Flow Plating Via Hole Chip Mounting Lamination Preparing L1-L2 (source: TDK-EPC Corporation)

16 SESUB Process Flow Under Fill SMT & CSP Mount Solder Ball Attach
22. März 2017 SESUB Process Flow Under Fill SMT & CSP Mount Solder Ball Attach Via Hole L1&L4 Lamination Plating & Etching SR Laminating (source: TDK-EPC Corporation)

17 Cross-section of highly integrated SESUB module
22. März 2017 Cross-section of highly integrated SESUB module SMD parts Fine pitch connection µm (min.) Layer 1 Bump Layer 2 IC ( Si thickness: 50 µm ) Layer 3 Layer 4 BGA Substrate thickness 300 μm Line/space 40/40 µm (min) Layer 1-2 via Explanation of the SESUB design… Messages: Integration of IC with fine-pitch I/O connections Thickness only 300 µm Close line/space Integrated BGA SMD components can be mounted on the surface Layer 2-3 via Layer 3-4 via (source: TDK-EPC Corporation)

18 PMU (Power Management Unit)
Molding Resign Shielding Metal Module size :10 x 8 x1,6mm 285pins 0.5mm pitch BGA, Ball size Φ0.25mm Die : PM-IC die 5.0 x 5.0mm, Digital die 2.8 x 2.4mm 31 components integrated Metal Can Shield or Integrated Shield L L C 1.0mm L4 C C 1,6 mm L3 0.3mm L2 L1 <Cross Section> 0.1mm VLS2520 C1005 MLP2012 MLP1608 C1608 C06 <Top View> <Bottom View> <IC embedding> 8mm 10mm 0.5mm 0.25mm (source: TDK-EPC Corporation)

19 Connectivity Combo Module - R074
R054D = (9.5 x 11.9 mm) R074 = (7.5 x 8 mm) SESUB size reduction of 45% Buried Quad-Combo IC (GPS-WLAN-BT-FM) (source: TDK-EPC Corporation)

20 Mixed TSV and SESUB (source: Yole Developpment)

21 10 Years in 2 A Mobile Computing Revolution
Now Performance improvement Power reduction Next Sub-system integration Miniaturization Future Laptop in your hand Mobile revolution

22 Acknowledgements Thanks to those who put together a lot of the original material for this review: Yuan Xie, PENNSTATE R. Schmidt, IBM Texas Instruments Amkor Technology, Inc. TDK-EPC Yole Developpment

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