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0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor Oscar Mattia, H. Klimach, S. Bampi and M. Schneider 1 ISCAS2015 – 0.7 V Supply Self-Biased.

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Presentation on theme: "0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor Oscar Mattia, H. Klimach, S. Bampi and M. Schneider 1 ISCAS2015 – 0.7 V Supply Self-Biased."— Presentation transcript:

1 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor Oscar Mattia, H. Klimach, S. Bampi and M. Schneider 1 ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor Electrical and Electronics Engineering Department Federal University of Santa Catarina Florianopolis, Brazil ETRO / mmWave group VUB / imec Leuven, Belgium Electrical Engineering Dep. Informatics Institute Federal University of Rio Grande do Sul Porto Alegre, Brazil

2 2 On this presentation 2 ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor This work introduces a threshold voltage monitor circuit, and a process independent design methodology. Features:  nanoWatt power  sub-1V power supply  self-biased and MOS-only Applications:  bias circuits  voltage references  process monitor/comp

3 3 Threshold Monitor Definition 3 “Ideally, a threshold voltage monitor is a circuit that delivers the estimated V T0 value as a voltage directly from its operational conditions”  without parametric setups  without curve fitting  without subsequent calculations ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

4 Outline 1.Background – MOSFET Model 2.Circuit Description 3.Design Methodology 4.Results 5.Conclusion 4 ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

5 5 5 V T0 is defined by the equality between the drift and diffusion components of the drain current. ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor UICM MOSFET Model Drift CurrentDiffusion Current Cunha et al. JSSC 1998

6 Outline 1.Background – MOSFET Model 2.Circuit Description 3.Design Methodology 4.Results 5.Conclusion 6 ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

7 7 Self-Cascode MOSFET E. Vittoz, J. Felrath, JSSC 1977 Rossi et al, Nanotech 2007 M1 in Triode, M2 in Saturation ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor V T0

8 8 Balancing 2 Self-Cascode Cells ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor M1/M2 in MI, M3/M4 in WI Camacho et al. TCAS II 2005 V T0

9 9 Limits Over Temperature ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor Camacho et al. TCAS II, 2005.

10 Outline 1.Background – MOSFET Model 2.Circuit Description 3.Design Methodology 4.Results 5.Conclusion 10 ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

11 11 Design Methodology - Sizing M1-M4 ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

12 Outline 1.Background – MOSFET Model 2.Circuit Description 3.Design Methodology 4.Results 5.Conclusion 12 ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

13 13 Simulation Results - Temperature 23 nW @ 27°C 33 nW @ 125°C V DD = 0.7 V V T0,nom = 426 mV @ 27°C ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

14 14 Simulation Results – Power Supply LS VG1 = 3.6 mV/V LS ITOTAL = 2.6 nA/V V DD = 0.6 - 1.2 V PSRR @ 100 Hz V G1 = -38.9 dB V DD = 0.7 V ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

15 15 Simulation Results – 300 MC Runs Average Process Variation Local Random Variation -40°C Combined Variation LOW SPREAD 27°C125°C ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

16 Outline 1.Background – MOSFET Model 2.Circuit Description 3.Design Methodology 4.Results 5.Conclusion 16 ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

17 17 Conclusion – Topology MOS-Only V T0 Monitor topology:  sub-1V Power Supply  nanoWatt Power Consumption  technology independent sizing ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

18 18 Conclusion – Performance ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor Simulation results show that:  tracks V T0 with average process variations  local mismatch main cause for variability  switching techniques (DEM, auto-zero, etc) and op-amps can enhance performance

19 19 Acknowledgments  CNPq for financial support  imec for financial support  CI-BRASIL Program for PDK licensing  MOSIS Educational Program for PDK licensing  Vicente Cunha for simulations ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

20 20 THANK YOU ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor oscar.elisio.mattia@imec.be mmWave group imec 3000 Leuven Belgium

21 21 Backup – Extraction Method ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor VGB (V) Siebel et al. Microelectronics Journal 2012

22 22 Backup – Sizing Tables ISCAS2015 – 0.7 V Supply Self-Biased NanoWatt MOS-Only Threshold Voltage Monitor

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