1. PHI 710 Scanning Auger Nanoprobe
Complete Auger Compositional Analysis
for Nanotechnology, Semiconductors,
Advanced Metallurgy and Advanced Materials

2. PHI Auger 710 Superior Analytical Capabilities
Nanoscale image resolution
Image registration for high sensitivity
Constant sensitivity for all sample geometries
High sensitivity at low tilt angles for insulator analysis
Nano-volume depth profiling
Chemical state analysis: spectra, imaging, depth profiling

3. PHI 710 Secondary Electron Imaging (SEI) 3 nm from Au Islands on Carbon
The beam diameter of the primary electron beam and the stability of the system mechanical and electrical components are the primary factors in the spatial resolution of the secondary electron imaging. For the field emission electron gun, the beam diameter decreases with beam current. For the PHI 710 at 25 kV and 0.2 nA, the dark space resolution for a gold islands on carbon substrate sample is less than 3 nm. This is at the analysis position for Auger analysis. This data shows the excellent low noise electronics and system stability of the PHI 710.
(Normally the JEOL Auger places the sample closer to the electron beam than for the position for normal Auger analysis to achieve similar secondary electron imaging spatial resolution as shown above for the PHI 710).

4. PHI 710: High Spatial Resolution Auger
BAM-L200 Standard Sample
AlGaAs Line Width (nm)
4 nm Al Line
Locations for Line Scans
Area Analyzed 1 2
Auger
Line
Scans 3 4
Ga Map 25kV; 1nA x256 pixels Line Analysis
Al Map 25kV; 1nA x256 pixels Line Analysis
24 Hour stability test demonstrating exceptional image registry
Sample provided by Federal Institute for Materials Research and Testing (BAM)
Berlin, Germany

5. PHI 710: High Spatial Resolution Auger
BAM-L200 Standard Sample
Line Scan #4 Ga
Intensity
Al (X3)
4 nm Line
0.05
0.1
0.15
0.2
0.25
0.3
0.35
Distance (µm)
24 hour analysis demonstrating exceptional image registration

6. Constant Sensitivity for All Geometries
Sensitivity vs. Sample Tilt
Field Emission
Electron Source
Minimum Beam Diameter
Multi-Channel
Detector
2,000
1,800
1,600
1,400
1,200
Sensitivity (kcps)
1,000
Coaxial CMA
800
Cylindrical
Mirror Analyzer
600
400
Non-Coaxial SCA
200
-90
-75
-60
-45
-30
-15 15 30 45 60 75 90
Tilt Angle (degree)
The CMA with a coaxial electron gun provides high sensitivity at all sample tilt angles which is essential for insulator analysis
Ar+ Ion Gun
Sample holder with high energy resolution optics

7. CMA with Coaxial Electron Gun
Only the PHI 710 can image samples such as
FIB sections with uniform, high sensitivity
Poly-Si/W Deposition and Patterning Auger Analysis of ex situ FIB cut
Auger maps show:
Defect is sub-micron Si oxide particle
Surrounded by elemental Si
Introduced during poly-Si deposition
Covered with W
Auger Maps:
Si oxide
Si elemental W

8. PHI CMA High Energy Resolution Mode
How does the high energy resolution mode work?
The CMA energy resolution is given as:
ΔE / E = 0.5%
An optics element placed between the sample surface and the entrance to the standard CMA retards the Auger electrons, reducing their energy, E
From the energy resolution equation, if E is reduced, ΔE is also reduced and so is the Auger peak width; energy resolution is improved
The CMA is not modified in any way and retains a 360º coaxial view of the sample relative to the axis of the electron gun
US Patent 12 / 705,261

9. PHI CMA High Energy Resolution Mode
710 Energy Resolution Specification
0.6
0.5
0.4
ΔE / E (%)
0.3
0.2
0.1
0.0
500
1000
1500
2000
2500
Auger Peak Kinetic Energy (eV)

10. PHI CMA High Energy Resolution Mode
Al KLL Spectra of Native Oxide on Al Foil
350
0.5%
300
0.1%
250
200
N(E) cps
150
100 50
eV (Al oxide)
(Al metal)
-50
1350
1360
1370
1380
1390
1400
1410
1420
Kinetic Energy (eV)
Auger KLL spectrum of native oxide on Al foil measured on PHI CMA at 0.5% (blue) and 0.1% (red) energy resolution, after background subtraction.

11. PHI CMA High Energy Resolution Mode
Zn LMM Spectra of Sputter Cleaned Zn Metal 1
0.5% Energy Resolution
0.1% Energy Resolution
0.9
0.8
0.7
0.6
Normalized Intensity
0.5
0.4
0.3
0.2
0.1
970
980
990
1000
1010
1020
1030
Kinetic Energy (eV)

12. PHI CMA High Energy Resolution Mode
Depth Profile of Native Oxide on Si
0.1% Energy Resolution 4
x 10
Si elemental 8 6
Si oxide 4
c/s
Si plasmons 2
10 kV - 10 nA
20 µm defocused beam
4 minutes per cycle -2 60 40 20
1630
1600
1610
1620
1580
1590
Kinetic Energy (eV)

13. PHI CMA High Energy Resolution Mode
Depth Profile of Zn Oxide on Zn
Zn oxide
Zn metal 5
x 10
9.8
9.6
9.4
9.2
c/s 9 10
8.8 5
8.6
8.4
970
980
990
1000
1010
1020
1030
Kinetic Energy (eV)

14. PHI 710 Spectral Window Imaging
Panel A shows a 200 µm FOV SEI of a semiconductor bond pad. Panel B shows the Si KLL peak area image from the area of panel A. Panels C, D and E show the chemical state images of silicide, elemental Si and Si oxynitride respectively. Panel F shows a color overlay of elemental silicon, silicide and silicon oxynitride images. A B E D
SEI
Elemental Si
Si Oxynitride
Silicide C
Si KLL Peak Area F
Si Chemical States

15. PHI 710 Spectral Window ImagingB C
Composite Si KLL
Elemental Si
Silicide
Si Oxynitride
Si KLL image with ROI areas
Si KLL Basis Spectra
1604
1608
1612
1616
1620
1624
Kinetic Energy (eV)
Intensity
1605
1615
1625
Panel A shows the Si KLL spectrum from the sum of all pixel spectra in the Si KLL Auger image shown in panel B. Panel B shows the three Regions Of Interest (ROI) selected for creation of the basis spectra for Linear Least Squares (LLS) fitting of the Si KLL image data set. Panel C shows the three basis spectra with their corresponding chemical state identifications.
PHI App. Note: Chemical State Imaging With
The PHI 710 Scanning Auger NanoProbe

16. Nanocone Imaging Auger Images Suggest
Larger Nanocone Surface Composed of Silicon Oxide and Nitride
Smaller Silicon Oxide Feature
Smaller Silicon Oxide Feature
N Map x 256 pixels
SEI
HR Si-oxide Map at 0.1% Energy Resolution
2O kV – 10 nA
Only the larger Nanocone contains N
Both the large and small features contain Silicon oxide
The composition suggested by the images is confirmed with high energy resolution analysis

17. Nanocone Chemical Analysis
Large Nanocone Base
0.1% Energy Resolution
Si Oxide
Standard
Si Nitride
Standard 1
Si KLL
0.8
0.6
Normalized Intensity
0.4
0.2
20 kV – 10 nA
1600
1605
1610
1615
1620
1625
1630
Kinetic Energy (eV)
Nanocone base is mixture of silicon oxide and silicon nitride

18. PHI 710 Advantages World’s best Auger depth profiling
Floating column ion gun for high current, low voltage depth profiling
Compucentric Zalar Rotation™ maximizes depth resolution
Image registration maintains field-of-view

19. Low Voltage Depth Profiling
Improved Interface Definition with use of Ultra Low Ion Energies
500 eV Depth Profile
100 eV Depth Profile 10 20 30
Sputter Time (min)
Intensity As Ga Al
200
400
600
800
Sputter Time (min)
Intensity As Al Ga
Improved definition of layers
AlAs/GaAs Super Lattice Sample

20. Nano Depth Profiling 60 nm Diameter Si Nanowire4
Surface Spectrum of Nanowire A
x 10 1
Atomic % 1
Si 97.5
SEI P
0.5 P
c/s
-0.5 O -1
20 kV, 10 nA, 13 nm Beam
-1.5 Si C -2
100
200
300
400
500
600
700
800
Kinetic Energy (eV)
P from the growth gas is detected on the surface of a Si nanowire

21. Non-homogeneous P Doping of Si Nanowires
Depth Profile of Nanowire B
500 V Ar sputter depth profiling shows a non-homogeneous radial P distribution.
The data suggests Vapor-Solid incorporation of P rather than Vapor-Liquid-Solid P incorporation 21

22. Compucentric Zalar Rotation Depth Profiling
Ion Beam
Compucentric Zalar rotation depth profiling defines the selected analysis point as the center of rotation. This is accomplished by moving the sample in X and Y while rotating, all under software control.
Micro-area Zalar depth profiling is possible on features as small as 10 µm with the 710’s automated sample stage.
Analysis
Area
Sample
Zalar rotation is used to eliminate sample roughening that can occur when sputtering at a fixed angle.

23. Compucentric Zalar Rotation Depth Profiling
Compucentric Zalar Depth Profile of 10 µm Via Contact
100 Si
Al (metal) 80 O 60
Atomic Concentration (%) 40
Al (oxide) 20
Secondary Electron Image
(Before Sputtering) 50
100
150
200
250
300
Sputter Time (min)

24. Compucentric Zalar Rotation Depth Profiling
Depth Profile Comparison With and Without Zalar Rotation
100
100 Si Si
Al (metal)
Al (metal) 80 80 O O 60 60
Atomic Concentration (%)
Atomic Concentration (%) 40 40
Al (oxide)
Al (oxide) 20 20 50
100
150
200
250
300 50
100
150
200
250
300
Sputter Time (min)
Sputter Time (min)
With Rotation
Without Rotation

25. Compucentric Zalar Rotation Depth Profiling
SE Images of 10 µm Via Contacts
after Depth Profiling
2500X
2500X
With Rotation
Without Rotation

26. Large Area Chemical Depth Profile of Ni/Si Wafer Annealed at 425 ºC
Elemental Depth Profile
300
0.1% Energy Resolution
10 kV-10 nA
20 µm Average
As Received
Ni LMM
Sputter Conditions:
500 V Argon
1 x 0.5 mm raster
No Zalar Rotation
10° Sample Tilt
Si KLL
200
Intensity (kcps)
100
Chemical State of Si ?
Chemical State of Ni ? 10 20 30 40 50 60
Sputter Time (min)

27. Large Area Chemical Depth Profile of Ni/Si Wafer Annealed at 425 ºC
Si Chemical Depth Profile Created Using Linear Least Squares Fitting
Si KLL
200
Si in
Si substrate
Intensity (kcps)
100
Si in Ni layer 10 20 30 40 50 60
Sputter Time (min)

28. Large Area Chemical Depth Profile of Ni/Si Wafer Annealed at 425 ºC
0.1% Energy Resolution
Si basis spectra for LLS
Si basis spectra for LLS (expanded)
Si KLL
Si KLL
Si in
Si substrate
Si in
Si substrate
Si in Ni layer
Si in Ni layer
Normalized Intensity
Normalized Intensity
1570
1590
1610
1630
1610
1615
1620
1625
Kinetic Energy (eV)
Kinetic Energy (eV) eV
(metal) eV
(silicide)

29. Large Area Chemical Depth Profile of Ni/Si Wafer Annealed at 425 ºC
Si Chemical Depth Profile Created Using Linear Least Squares Fitting
300
0.1% Energy Resolution
Ni LMM
Ni in Ni layer
200
Ni in
Si substrate
Intensity (kcps)
100 10 20 30 40 50 60
Sputter Time (min)

30. Large Area Chemical Depth Profile of Ni/Si Wafer Annealed at 425 ºC
0.1% Energy Resolution
Ni basis spectra for LLS
Ni basis spectra for LLS (expanded)
Ni LMM
Ni LMM
Ni in
Si substrate
Ni in
Si substrate
Ni in Ni layer
Ni in Ni layer
Normalized Intensity
Normalized Intensity
810
820
830
840
850
860
870
880
830
835
840
845
850
855
860
Kinetic Energy (eV)
Kinetic Energy (eV)
844.8 eV
(Ni-silicide)
846.2 eV
(Ni-metal)

31. Large Area Chemical Depth Profile of Ni/Si Wafer Annealed at 425 ºC
After Depth Profile 2
2.5 Si
2.0 Si Ni 1 Ni Ni
Point 1
Intensity (Mcps) | Ni | Si
1.5 | |
Point 2 C
1.0 Si C
SEM 20kV - 1nA Analysis points
22 nm beam size
500
1000
1500
2000
Kinetic Energy (eV)
Auger multi-point analysis shows composition of nano-structures
Point 1: Ni-silicide
Point 2: Si-metal

32. Large Area Chemical Depth Profile of Ni/Si Wafer Annealed at 425 ºC
After Depth Profile
0.1% Energy Resolution
Si KLL
Si KLL (expanded)
22 nm beam size
Point 2
Si in
Si substrate
Point 1
Si in Ni layer
Point 2
Si in
Si substrate
Point 1
Si in Ni layer
Normalized Intensity
Normalized Intensity
22 nm beam size
1570
1580
1590
1600
1610
1620
1630
1640
1610
1615
1620
1625
Kinetic Energy (eV)
Kinetic Energy (eV) eV
(metal) eV
(silicide)

33. Nano-areas selected for depth profiling
Ni/Si Annealed at 425 °C
12 nm Removed
Nano-areas selected for depth profiling 1 2 2 1
SEM kV - 10 nA Analysis points
Auger Color Overlay kV - 10 nA x 256 pixels

34. Nano Area Chemical Depth Profile of Ni/Si Wafer Point 1 – Ni Layer
Chemical Depth Profile Created Using Linear Least Squares Fitting
Ni metal
Si metal
200
Intensity (kcps)
Sputter Conditions:
500 V Argon
1 x 0.5 mm raster
No Zalar Rotation
10° Sample Tilt
10 kV – 10 nA
Point 1
LLS Profile
100
Si silicide
Ni silicide
22 nm beam size 20 40 60 80
100
120
140
160
180
200
Sputter Depth (nm)
Nano area depth profile shows nickel silicide at the nickel / silicon interface
Large area depth profile included heterogeneous distributions of nickel silicide that grows through imperfections in Ni film

35. PHI 710 Scanning Auger Nanoprobe Multi-technique Options
Energy Dispersive Spectroscopy (EDS or EDX)
Backscatter Electron Detector (BSE)
Electron Backscatter Diffraction (EBSD)
Focused Ion Beam (FIB)
The Complete Auger Solution

36. PHI 710 Chamber Layout for Options

37. PHI 710 Scanning Auger Nanoprobe
Complete Auger Compositional Analysis
for Nanotechnology, Semiconductors,
Advanced Metallurgy and Advanced Materials