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Electron And Hole Equilibrium Concentrations 18 and 20 February 2015 Chapter 4 Topics-Two burning questions: What is the density of states in the conduction and valence bands? How do you find an exact position of the Fermi Level?
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2 Concentration of Electrons at Equilibrium Thermal-equilibrium concentration of electrons (#/cm 3 ) in the conduction band Assume that E F is within the energy bandgap and So for energy levels in the conduction band there is (kT ≈ 25.9 meV for T=300K). So for energy levels in the conduction band Page 87 Text, Equation 3.69
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Also Refer To Appendix B
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8 8 Concentration of Electrons at Equilibrium Define effective density of states in the conduction band
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10 Concentration of Holes at Equilibrium Thermal-equilibrium concentration of holes (#/m3) in the conduction band Assume that E F is within the energy bandgap and So for energy levels in the conduction band there is then for energy levels in the conduction band
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11 Concentration of Holes at Equilibrium Define effective density of states in the valence band
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14 Carrier Concentrations in Intrinsic Semiconductors For an intrinsic semiconductor, the concentration of electrons in the conduction band is equal to the concentration of holes in the valence band is the Fermi-level for the intrinsic semiconductor, i.e., intrinsic Fermi-level For a given semiconductor, at constant temperature, n i is constant
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16 The Intrinsic Fermi-Level position If
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Fermi-Energy Levels In Extrinsic Semiconductors
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18 Electron and Hole Concentrations in Extrinsic Semiconductor Summary For both undoped material and doped material under equilibrium condition
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19 Position of Fermi Energy in Extrinsic Semiconductors Position of Fermi-level:
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20 Variation of Fermi-Energy with Doping Concentration
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21 Variation of Fermi-Energy with Temperature
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