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POWER ELECTRONICS Instructor: Eng.Moayed N. EL Mobaied The Islamic University of Gaza Faculty of Engineering Electrical Engineering Department بسم الله.

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Presentation on theme: "POWER ELECTRONICS Instructor: Eng.Moayed N. EL Mobaied The Islamic University of Gaza Faculty of Engineering Electrical Engineering Department بسم الله."— Presentation transcript:

1 POWER ELECTRONICS Instructor: Eng.Moayed N. EL Mobaied The Islamic University of Gaza Faculty of Engineering Electrical Engineering Department بسم الله الرحمن الرحيم EELE 5450 — Fall 2009-2010 Lecture 3

2 Chapter Two Power Semiconductor Diodes Power diodes have large power-, voltage-, current- handling capabilities than that of ordinary signal diodes.

3 Chapter Two Power Diodes symbol and type of packaging

4 Chapter Two Diode Characteristics

5 Chapter Two V-I characteristics Forward-biased region Reverse biased region Breakdown region

6 Chapter Two N=1,2( Germanium, Silicon) practically 1.1—1.8 Shockley’s equation V T = Thermal voltage I S = Saturation current

7 Chapter Two Shockley diode equation

8 Chapter Two Forward-bias V D >0

9 Chapter Two Reverse-bias V D <0

10 Chapter Two Reverse Recovery Characteristics Tb/Ta is the softness factor (SF)

11 Chapter Two Power Diode Types Ideally, a diode should have no reverse recovery time, However, the manufacturing cost of such diode will increase. The power diodes can be classified into three categories: Standard or general-purpose diodes Fast-recovery diodes Schottky diodes

12 Chapter Two Standard or general-purpose diodes Reverse recovery time= 25 us (relatively high). Used in Low-speed applications. Current rating : From less than 1 Ampere to several thousands of Amperes. Voltage rating 50 v to 5 kV.

13 Chapter Two Fast-Recovery Diodes Reverse recovery time< 5 us ( Low). Used in DC-DC and DC-AC converter circuit (high speed applications). Current rating : From less than 1 Ampere to several hundreds of Amperes. Voltage rating 50 v to 3 kV. Platinum or gold.

14 Chapter Two Schottky Diodes No minority carriers. Recovered charge is much less than P-n junction diodes. Used in high current and low voltage dc power supplies. Current rating : From 1 Ampere to 300 Amperes. Voltage rating <100 V.

15 Chapter Two End of Lecture **** Eng.moayed The reverse recovery time of a diode is trr=3us and the rate of fall of the diode current is di/dt=30 A/us Determine (a) the storage charge Q rr (b) Peak reverse current I rr


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