Presentation on theme: "Irradiation facilities for semiconductor detectors and electronics"— Presentation transcript:
1 Irradiation facilities for semiconductor detectors and electronics at the INFN National Laboratory of LegnaroAndrea CandeloriIstituto Nazionale di Fisica Nucleare and Dipartimento di Fisica, Padova
2 OUTLINE• The SIRAD irradiation facility at the TANDEM accelerator:- high energy protons and ions.• The CN accelerator:- protons and neutrons.• Total dose tests:- Tungsten (W) and Molybdenum (Mo) X-rays;- 60Co -rays.
3 The SIRAD Irradiation Facility The SIRAD irradiation facility is located at the Tandem accelerator of the INFN National Laboratory of Legnaro (Padova, Italy).Tandem accelerator:-Van de Graaff type; MV maximum voltage; two strippers;-servicing 3 experimental halls for nuclear and interdisciplinary Physics;Schematics of the 15 MV Tandem Van de Graaff accelerator and of the SIRAD irradiation facility at the +70º beam line (left). A photograph of the SIRAD irradiation facility is also shown for completeness (right).
4 Typical ion species available at SIRAD • Ion species from 1H (22-30 MeV) up to 197Au (1.4 MeV/a.m.u.)• LET from 0.02 MeVcm2/mg (1H) up to 81.7 MeVcm2/mg (197Au)The energy values refer to the most probable q1 and q2 charge state, with two stripper stations, and the Tandem operating at 14 MV.1st multi-source2nd multi-source
5 Low flux (102-105 ions/cm2s) irradiation set-up on 22 cm2 The on-line beam monitoring system for defocused beams by the fixed and mobile diodes:-left: side view of the experimental set-up;-right: front view (transverse to the beam) of the fixed and mobile diode boards.The mobile diodes are mounted on the sample holder with the DUT. The figure is not drawn to scale.
6 High flux (>108-109 ions/cm2s) irradiation set-up on 55 cm2 The on-line beam monitoring for rastered proton and ion beams by the 33 battery of Faraday cups positioned behind the DUT: side view of the experimental setup. The aperture of each Faraday cup is 0.60.6 cm2. The figure is not drawn to scale.
7 Example of validation for space mission Validation of the ASIC for the GLAST Large Area TelescopeGLAST space telescopeInternational collaboration (NASA, ESA, ASI, INFN,...)INFN Padova: radiation tests of tracker, DAQ electronicsASICs validated for SEE at SIRADASICs validated for TD at CNR-ISOF 60Co -ray sourceCOTS validated for SEE at SIRAD
8 Summary of the main research activities at SIRAD SEE in ASICs for CMS, GLAST, AGILE, ALICESEE in FPGACharge loss in Flash E2PROMSEB, SEGR in power MOSFETsRILC and RSB (Ultra-thin gate oxide)Silicon detectorsMore than 61 papers published in the last 4 years.
11 SIRAD Collaboration in Italy and abroad 1) Dip. di Fisica and INFN Padova2) INFN Laboratori Nazionali di Legnaro3) Dip. Ingegneria dell’Informazione, Padova4) Tecnomare SpA (Venezia)5) Center for Advance Space Optics (Trieste)6) Dip. Fisica and INFN, Trieste7) ITC-IRST (Trento)8) Dip. Informatica e Telecomunicazioni, Trento9) INAF, Sezione di Milano10)ST Microelectronics (Agrate Brianza, Milano)11) Dip. Elettronica, Pavia12) Dip. Ingegneria Industriale, Bergamo13) Dipartimento di Fisica Sperimentale, Torino14) Dip. Automatica e Informatica,Politecnico di Torino15) Dip Fisica and INFN, Bologna16) Dip. Energetica and INFN, Firenze17) Aurelia Microelettronica S.p.A. (Viareggio)18) Dip.Ingegneria Elettronica, Università Roma 219) INAF, Sezione di Roma20) DAEIMI e DSM, Università di Cassino21) ST Microelectronics (Catania)A) Institut für Experimentalphysik (Amburgo, Germania)B) LETI (Grenoble, Francia)C) Centro Nacional de Microelectronica (Barcellona, Spagna)D) IMEC (Lovanio, Belgio)E) Philips Semiconductor (Nijmegen, Olanda)F) CERN (Ginevra, Svizzera)G) Helsinki Institute of Physics (Finland)H) Santa Cruz Institute for Particle Physica (California, U.S.A)BERGAMOPADOVAPAVIAVIAREGGIOCASSINO
12 CN acceleratorCharacteristics: Van de Graaff type, 7 MV maximum voltage;Ion species: p (1H); d (2H); t (3H); 4He (single or double charge) and 15N (double charge)Max energy: 7 MeV for single charged species;14 MeV for 4He++; 8 MeV for 15N++.T(d,n)4He9Be(d,n)10Bwith moderatorD(d,n)3He7Li(p,n)7Be9Be(d,n)10B
14 W and Mo X-rays: Seifert Rp-149 Irradiation Facility • Tube with W ( keV L-lines) or Mo ( keV K-lines) anode.• Maximum tube voltage 60 kV. Maximum tube current 50 mA.• X,Y (motorized) and Z (manual) axis for accurate position setting of the tube.• Radiation hardness qualification of the APV25 chip for the CMS silicon tracker.X-ray tubeSemi-automaticprobestationLaser pointerY axis motorXYZ
15 W and Mo X-rays: radiation field dimensions 20406080100120140-20-15-10-551015Dose rate (rad(Si)/s)D=10 cmD=15 cmD=20 cmD=40 cm13.9 mm15.5 mm16.1 mm20.6 mmX position (mm)20406080100120140-20-15-10-551015Dose rate (rad(Si)/s)D=10 cmD=15 cmD=20 cmD=40 cm7.2 mm9.2 mm11.4 mm19.4 mmY position (mm)
16 60Co -ray source (CNR-ISOF) • Irradiation Facility: Panoramic Gammabeam model 150 Aproduced by Nordion Ltd (Canada)• Photon energies: MeV and MeV• Present activity: 2000 Ci ( 7.41013 Bq)• Point source for D>10 cm (D= cm)• Dose rate: ~5 rad(Si)/s at D=20 cm, ~1 rad(Si)/s at D=45 cm
17 • The SIRAD irradiation facility at the 15 MV TANDEM accelerator: Conclusions• The SIRAD irradiation facility at the 15 MV TANDEM accelerator:- Ion species from 1H (23-30 MeV) up to 197Au (1.4 MeV/a.m.u.)- LET from 0.02 MeVcm2/mg up to 81.7 MeVcm2/mg- High (> ions/cm2s) and low ( ions/cm2s) flux set-up- Ion Electron Emission Microscopy possibility- New irradiation chamber and sample holder (ESA standards)• The CN accelerator:- Monochromatic spectra: D(d,n)3He, T(d,n)4He, 7Li(p,n)7Be- Continuous spectra: 9Be(d,n)10B- Thermal neutrons: 9Be(d,n)10B with moderator• Total dose tests:- X-rays: W (L-lines at 7-12 keV) and Mo (K-lines at keV) anode;dose rate: 120 rad(Si)/s.- -rays: 60Co with 1-5 rad(Si)/s dose rate (D=20-45 cm).
18 INFN Laboratori Nazionali di Legnaro More information on the web site Scuola Nazionale“Rivelatori ed elettronica per applicazioni spaziali, Astrofisica e Fisica delle Alte Energie”INFN Laboratori Nazionali di Legnaro4-8 Aprile 2005More information on the web site
19 What is SIRAD?SIRAD is the acronym for SIlicon and RADiation.The SIRAD irradiation facility is dedicated:"to investigate radiation effects on silicon detectors, electronic devices and systems in radiation hostile environments".-Total dose effects as a result of ionization damage.-Bulk effects as a result of displacement damage.-Single event effects as a result of an energetic particle strike.-High energy physics experiments.-Space missions of scientific and commercial satellites.
20 SIRAD upgrade: the Ion Electron Emission Microscope (IEEM) Purpose: Single Event Effect mapping, Ion Beam Induced Charge Collection studies.Nuclear Microprobe: µ-focused beamIEEM: defocused beam (Sandia)Ion beam2D electrondetector atfocal plane ofelectron opticsObject slit(Xhit,Yhit)Nuclear Microprobe:magnet optics for focusing (e.g. triplet)and electron optics for scanningsecondaryelectronsIon beamelectronoptics(Xbeam,Ybeam)coatingrastering patternchanneltronhit confirmation bysecondary electronsanalysis ofsignalanalysis ofsignaltargettargetResolution on target determined by beam opticsspot size and positioning.Resolution on target: lateral size of field of viewdivided by linear line pair resolution of sensor.
21 SIRAD upgrade: the Ion Electron Emission Microscope (IEEM) UV lamp(PEEM)SIRADcontrast diaphragmIIlensPSDImage intensifierThe ion impact position on the target is determined by “imaging” the position from which secondary electrons are emitted: the intrinsic resolution is of the order of 0.6 m over a 250 m field of view.
22 IEEM images with UV lamp and ion beam • Lattice step: 40 mm• Structure width is about 6 mm.• The lattice is made by copper.UV lamp223 MeV Br ion beam
23 W and Mo X-rays: emission spectra 1.0W anode, 50kV, 0.1 mm Al filtrationMo anode 30 kV, 0.1 mm Mo filtration17.4 keV19.6 keVkeVWMo0.80.6Photons/(mAsmm2) at 750 mmnormalized to maximum0.40.20.05101520253035404550Photon energy (keV)