1. 1 EE365 Read-only memories Static read/write memories Dynamic read/write memories

2. 2 Read-Only Memories Program storage –Boot ROM for personal computers –Complete application storage for embedded systems.

3. 3 A 4x4 Multiplier ( using AND gates and full-adders ) Maximum Delay path

4. 4 A 4x4 multiplier using a 256x8 ROM Use a C-program to generate this table

5. 5 Logic diagram of a 8x4 diode ROM For a 4x4 multiplier replace the 3-to-8 decoder by a 8-to-256 decoder For a 4x4 multiplier replace the 3-to-8 decoder by a 8-to-256 decoder And then add a number of diodes at some of the intersection points using the table generated earlier And then add a number of diodes at some of the intersection points using the table generated earlier And you have a 4x4 multiplier that will be real fast Add 8 vertical lines to output Add 8 vertical lines to output Sounds scary? We will see much larger circuits later Sounds scary? We will see much larger circuits later

6. 6 Two-dimensional decoding 128x1 ROM

7. 7 Mos Transistors as Storage elements

8. 8 Larger example, 32Kx8 ROM

9. 9 Typical commercial EEPROMs

10. 10 Microprocessor EPROM application

11. 11 ROM control and I/O signals

12. 12 ROM timing

13. 13 Read/Write Memories a.k.a. “RAM” (Random Access Memory) Volatility –Most RAMs lose their memory when power is removed –NVRAM = RAM + battery –Or use EEPROM SRAM (Static RAM) –Memory behaves like latches or flip-flops DRAM (Dynamic Memory) –Memory lasts only for a few milliseconds –Must “refresh” locations by reading or writing

14. 14 SRAM

15. 15 SRAM operation Individual bits are D latches, not edge-triggered D flip-flops. –Fewer transistors per cell. Implications for write operations: –Address must be stable before writing cell. –Data must be stable before ending a write.

16. 16 SRAM array

17. 17 SRAM control lines Chip select Output enable Write enable

18. 18 SRAM read timing Similar to ROM read timing

19. 19 SRAM write timing Address must be stable before and after write-enable is asserted. Data is latched on trailing edge of (WE & CS).

20. 20 Bidirectional data in and out pins Use the same data pins for reads and writes –Especially common on wide devices –Makes sense when used with microprocessor buses (also bidirectional)

21. 21 SRAM devices Similar to ROM packages 28-pin DIPs32-pin DIPs

22. 22 Synchronous SRAMs Use latch-type SRAM cells internally Put registers in front of address and control (and maybe data) for easier interfacing with synchronous systems at high speeds E.g., Pentium cache RAMs

23. 23 DRAM (Dynamic RAMs) SRAMs typically use six transistors per bit of storage. DRAMs use only one transistor per bit: 1/0 = capacitor charged/discharged

24. 24 DRAM read operations –Precharge bit line to V DD /2. –Take the word line HIGH. –Detect whether current flows into or out of the cell. –Note: cell contents are destroyed by the read! –Must write the bit value back after reading.

25. 25 DRAM write operations –Take the word line HIGH. –Set the bit line LOW or HIGH to store 0 or 1. –Take the word line LOW. –Note: The stored charge for a 1 will eventually leak off.

26. 26 DRAM charge leakage Typical devices require each cell to be refreshed once every 4 to 64 mS. During “suspended” operation, notebook computers use power mainly for DRAM refresh.

27. 27 DRAM-chip internal organization 64K x 1 DRAM

28. 28 RAS/CAS operation Row Address Strobe, Column Address Strobe –n address bits are provided in two steps using n/2 pins, referenced to the falling edges of RAS_L and CAS_L –Traditional method of DRAM operation for 20 years. –Now being supplanted by synchronous, clocked interfaces in SDRAM (synchronous DRAM).

29. 29 DRAM read timing

30. 30 DRAM refresh timing

31. 31 DRAM write timing