1. Bulk MEMS 2014, Part 1 sami.franssila@aalto.fi

2. Types of MEMS Bulk MEMS: anisotropic wet or DRIE of bulk silicon SOI MEMS: DRIE or wet etching of SOI wafers Surface MEMS: thin films on top of a wafer Integrated MEMS: CMOS and MEMS on same chip

3. Bulk MEMS

4. Bulk MEMS: backside vs. front side machining

5. SOI MEMS

6. Surface MEMS http://phys.org/news/2010-12-panasonic- imec-thin-packaged-mems.html "Physics and Technology of Silicon Carbide Devices", book edited by Yasuto Hijikata,

7. CMOS-MEMS a b b) single crystal silicon MEMS by backside DRIE a) thin film MEMS by front side dry plasma release;

8. Aspects of MEMS integration Bulk and SOI MEMS are highly 3D Bulk and SOI MEMS are often double sided DRIE & KOH etching Bonding often involved Package to accomodate moving parts

9. Wafer bonding direct bonding: Si/Si, glass/glass, PMMA/PMMA,…a.k.a. fusion bonding anodic bonding (AB): Si/glass, glass/Si/glass thermo-compression bonding (TCB): Au-Au eutectic bonding: Si/Au (363 o C) glass frit bonding: glass melting adhesive bonding: “glues” applied, any substrate

10. Basic requirements for bonding Wafers are flat (no centimeter scale wavyness) Wafer are smooth (not rough on atomic/nanometer scale) Materials form chemical bonds across their interface High stresses are avoided No interface bubbles develop

11. Bonding

13. Alkaline anisotropic etchants EtchantKOHTMAH Rate (at 80 o C)1 µm/min0.5 Typical concentration40%25% Selectivity (100):(111)200:130:1 Selectivity Si:SiO 2 200:12000:1 Selectivity Si:Si 3 N 4 2000:12000:1 Etch stop factor 10100 (10 20 cm -3 )

14. Membrane formation Nitride membrane; no timing needed Timed silicon membrane; thickness depends on etch rate and wafer thickness control. Thin membrane thickness control bad. SOI wafer, membrane thickness determined by SOI device layer thickness

15. Boron etch stop = highly doped silicon not etched in KOH

16. Piezoresistive pressure sensor Boron doped p++ membrane is a passive structure ! Active elements consist of the deposited polysilicon resistors.

17. Boron etch stop for AFM b a c a)oxide masked etching of tip; b)b) p++ boron doping on front side; c)KOH etching from backside, stopping on p++ layer.

18. Convex corner undercutting From: Maluf

19. Undercut by misorientation or design

20. Membrane structures by surface micromachining

21. Undercutting & corner compensation Without compensation With compensation Corner not sharp, but narrow slit Corner sharp but wide slits

22. Corner compensation structures

23. Etching mesas and pyramids H.Schröder, E. Obermeier, A. Horn, G. Wachutka, Convex Corner Undercutting of {100} Silicon in Anisotropic KOH Etching, J. Microelectromechanical Systems, v. 10 (1) March 2001, p.88 Mask undercut will lead eventually to a pyramid

24. 20% KOH 100 um 20% KOH + 5% IPA 100 um Adding IPA reduces the underetch, and similarly many surfactants change crystal plane selectivity Undercutting depends on exact etch chemistry and conditions

25. Peeling mask Figure 20.4 a b Fig. 21.17 Also known as nested mask

26. Thermal pressure sensor (2) heat sink heater resistor thermopile nitride p0p0 p0p0 p1p1

27. Thermal pressure sensor (2)

28. Membrane formation Nitride membrane; no timing needed Timed silicon membrane; thickness depends on etch rate and wafer thickness control. Thin membrane thickness control bad. SOI wafer, membrane thickness determined by SOI device layer thickness

29. Piezoresistive pressure sensor Boron doped p++ membrane is a passive structure ! Active elements consist of the deposited polysilicon resistors.

30. Micro hot plate: nitride membrane Pt heater Nitride Pt measurement electrodes sensor material oxide