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CELeSTA CERN LATCHUP STUDENT SATELLITE TEST BOARD DEVELOPMENT AND CHARM PRELIMINARY RESULTS Raffaello Secondo ESA/ESTEC CERN Visit - DECEMBER 9 th 2014
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Overview RadMON V6: Architecture The CELESTA Test Board V1: PCB concept and description. Architecture details. CHARM facility Test zone Installation of the Setup Board interface Preliminary Results TID HEH Fluence Calculation SEL Conclusions and Future Work 1/16 ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO
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RadMon V6 – Main Architecture 2/16 ACTEL FPGA FielDrive Sensor ADC Monitoring ADC Conditioning RADFETs: 100 nm 400 nm PIN Diodes Temperature SRAMs SensorBoard 3V3 and 1V5 voltage regulators 8.5V 18V, -5V, 5V, VMEM PowerBoard MainBoard Three Modules Communication via NanoFIP Network Installation in the SPS Tunnel, PS and PSB Injectors. CHARM and ALICE. ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO
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RadMon V6 – Top View 3/16 TID Measurement Displacement Damage (P-i-n Diodes) Two Memory Banks: Cypress and Toshiba SRAM Withstand up to 200 Gy (ADC is the bottleneck) Connection to Deported Module ALL ICs previously tested at PSI. SRAM BANK 1 SRAM BANK 2 RADFETS P-i-n Diodes Connection Deported Module ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO
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The CELESTA Test Board V1 4/16 SEU: Cypress CY62157EV. Dose: Tyndall RadFet 100 nm. SEL: Brilliance BS62LV1600EIP. Latchup Detection via 16 bit ADC. Board Dimensions: 13.5cm x 10cm. Communication via UART RS422, using MODBUS protocol. All ICs on Board have been tested at PSI as on the RadMON. Timings: SRAM + Radfet scanned every Two minutes. ADC sampling period 1ms. RADFET BRILLIANCE CYPRESS ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO
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The Test Board – Architecture Details 5/16 Dose Measurement SEL Detection SEU/MBU Counting To ADC ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO
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CHARM Test Area 6/16 ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO
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Test Setup 7/16 Setup in the Lab: Two Power Supplies. Conversion RS422 to RS232. Voltage levels take into account the Maximum Voltages to be applied on the operational amplifiers. ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO
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Setup in the Test Area 8/16 Two Boards Tested. RadMON V6 + Deported Module in the same Test Location. ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO
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Setup in the Test Area 9/16 Test Locations ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO
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Acquisition Software 10/16 Remote Control of SEL Threshold. Radfet Sweep Time 100 ms. ADC period = 1 ms. Acquisition Period = 50 ms. Temperature Sensor on Board.
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Preliminary Test Results – TID 11/16 Board 0001 placed on 24/11/2014 - Board 0002 placed 1/12/2014 Board 0001
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Preliminary Test Results – TID The Satellite temperature will be needed to compensate temperature effects in post processing. 12/16
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Preliminary Test Results – SEUs and MBUs 13/16 MBUs and SEUs are stored in different dedicated registers. ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO Board 0001
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Preliminary Test Results – SEUs Analysis 14/16 The cross section for the used lot of Cypress SRAM was previously measured at PSI: σ = 3. 3·10 -13 cm 2 /bit SEUs = 480000. Size = 8*1024*1024 fluence = 1.7 ·10 11 HEH/cm 2 Given the flux at position 4 as 3.5 ·10 9 HEH/cm 2 ·h : Expected result from FLUKA fluence = 1.47·10 11 HEH/cm 2 ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO
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Preliminary Test Results – SELs Latchup Threshold set to 15 mA. ADC ran with 1 ms sampling period. Waiting time before Memory deactivation = 2 ms. 15/16 ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO Sampling Period = 20 ms. Board 0002
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Conclusions and Future Work 16/16 ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO CELESTA TestBoard Developed from RadMON V6 concept, for Cubesat Missions. First prototype Board, moving towards the final PCB. Measurement of TID, HEH fluence and evaluation of SELs. CHARM facility Representative Space-Like Environment, used to characterize the Board. First tests started in late November. Preliminary Results Comparison with FLUKA. The Radfet Voltage Analysis need to take Temperature into account. Micro-Latchups show up from the current plot. Hardware Modifications and Improvements Memory candidates for SEL. SEL detection using a comparator circuit. TID measurement (other RadFet options, FGDOS?) Towards a Final Version of the Board (Power, Dimensions, etc…)
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Thanks ESA/ESTEC CERN VISIT - DECEMBER 9 TH 2014 RAFFAELLO SECONDO
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