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Susmit Biswas A Pageable Defect Tolerant Nanoscale Memory System Susmit Biswas, Tzvetan S. Metodi, Frederic T. Chong, Ryan Kastner susmit@cs.ucsb.edu
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Susmit Biswas Problem Statement In a nanoscale memory system with high manufacturing defect rate, we aim to find a scheme with low static and dynamic overhead to identify and avoid the use of defective blocks and make usable memory in the granularity of 4-KByte size pages.
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Susmit Biswas Is it a significant problem? Manufacturing defect –10 – 30% using Self-assembly DNA computing –Low yield Yield decreases with block size
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Susmit Biswas Is it a significant problem?
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Susmit Biswas Critical Factors Static Overhead –Bad block information Dynamic Overhead –Reading and writing latency
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Susmit Biswas ECC Overhead source: Likharev07
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Susmit Biswas Contribution Analytical model Defect tolerance technique –ECC, defect map, sparing Study on area benefit Fixed size block or variable size?
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Susmit Biswas Prior Work Error Correcting Codes [Jeffery04] [Ou04] Reconfiguration using Defect Map [Tahoori05][Wang06][DeHon05][Likharev-JETC07] Built-in-self-Repair (BISR) [Bhavsar-ITC99][Schöber-ITC01][Nicolaidis-JET05] Combination of schemes [Sun06] [Likharev-JETC07][Biswas-ICCAD07]
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Susmit Biswas Technique Benefit from all –Error Correcting Code (BCH) Strength of code –Defect Map Level of map –Spare Block Amount of sparing
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Susmit Biswas Technique Store the defect map in unreliable memory Defect Map Reconfiguration Map
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Susmit Biswas Technique Majority voting to provide correctness 101 111101 Majority Voter 101 Defect Map
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Susmit Biswas Defect Map System Architecture Spare Map Metadata Data
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Susmit Biswas Pros and Cons Pros –Locality of data and metadata –Low static overhead –High yield –Can be pipelined –Support for virtual memory system Cons –2s + 1 memory block read Locality reduces overhead
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Susmit Biswas Results: Storage Efficiency
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Susmit Biswas Results: Static Overhead
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Susmit Biswas Fixed vs. Variable Block
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Susmit Biswas Summary Defect tolerance technique –Combination of static and dynamic scheme Encoding defect-map with data –Locality of data –Low static overhead –High yield Higher yield using variable sized page –Static overhead increases
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Susmit Biswas Future Work Efficient BCH module design Interconnect reliability by redundancy Cache design using unreliable memory
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Susmit Biswas Contact: Susmit Biswas Arch Lab, Department of Computer Science University of California at Santa Barbara susmit@cs.ucsb.edu Online version available at: http://cs.ucsb.edu/~susmit/papers/nanoarch07_nanomemory.pdf http://cs.ucsb.edu/~susmit/papers/nanoarch07_nanomemory.pdf
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Susmit Biswas References [Sun06] F. Sun and T. Zhang. “Two Fault Tolerance Design Approaches for Hybrid CMOS/Nanodevice Digital Memories”. Nanoarch 2006 [Wang06] G. Wang, W. Gong, and R. Kastner. “Defect- Tolerant Nanocomputing Using Bloom Filters”. ICCAD 2006 [DeHon05] A. DeHon and K. K. Likharev. “Hybrid CMOS /Nanoelectronic Digital Circuits: Devices, Architectures, and Design Automation”. ICCAD '05 [Tahoori05] M. B. Tahoori. “A Mapping Algorithm for Defect-Tolerance of Recongurable Nano-Architectures”. ICCAD ’05
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Susmit Biswas References [Likharev07] D. Strukov and K. Likharev, “Defect-Tolerant Architectures for Nanoelectric Crossbar Memories”. Journal of Nanoscience and Nanotechnology, January 2007 [Jeffery04] C. M. Jeffery, A. Basagalar, and R. J. O. Figueiredo, “Dynamic Sparing and Error Correction Techniques for Fault Tolerance in Nanoscale Memory Structures”. 4th IEEE Conference on Nanotechnology 2004. [Ou04] E. Ou and W. Yang, “Fast Error-Correcting Circuits for Fault-Tolerant Memory”, MTDT, pages 8 - 12, 2004.
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Susmit Biswas Reference [Ramón05] Ramón Compaňó, “Trends in nanoelectronics”, Journal of Nanotechnology 12, 2001 [Biswas-ICCAD07] Susmit Biswas, Gang Wang, Tzvetan S. Metodi, Frederic T. Chong, Ryan Kastner, “ Combining Static and Dynamic Defect-Tolerance Techniques for Nanoscale Memory Systems”, to appear in ICCAD 07
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Susmit Biswas Results Metric –Storage efficiency (# physical bits/#logical bits) –Configuration data overhead
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