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Raman Spectrum of Graphene and Graphene layers PRL 97, 187401 (2006) Sebastian Remi Journal Club 11/26/2006.

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Presentation on theme: "Raman Spectrum of Graphene and Graphene layers PRL 97, 187401 (2006) Sebastian Remi Journal Club 11/26/2006."— Presentation transcript:

1 Raman Spectrum of Graphene and Graphene layers PRL 97, 187401 (2006) Sebastian Remi Journal Club 11/26/2006

2 Carbon Organic molecules, fuel etc. Physical structure 6 electrons 1s2, 2s2, 2p2, “4” unpaired electrons In molecule crystal structures hybridization: mixing of atomic orbitals in a way which maximizes the binding energy with the neighbour atoms Is found in a huge variety of different materials among those the hardest (diamond) and the softest…

3 Graphite Graphene Strong bonds in a particular layer Weak bonding between layers, which can easily be removed

4 Electronic structure Electrons near the K point show relativistic dispersion Relativistic behaviour Graphene band structure is 1 st order approximation for Graphite bandstructure M

5 Preparation Chemical growth: production of multilayers Micromechanical cleavage Among thicker graphite flakes there are always thin graphite films and single graphene layers

6 Identification Optical AFM Si SiO2 White light Single layerBi layer

7 Raman spectrum Raman spectrum shows characteristic dependence on thickness of graphite film Identification and comparison of single, bi… layers Evolution of Raman lines is directly connected to electronic structure

8 Raman effect Energy and Momentum conservation usually K~0, because BZ>>k e E kK(max) Phonon band Photon dispersion

9 Setup Spectrometer Laser 633nm or 514nm 0.04-4 mW Sample

10 Raman effect in Graphene

11 G-Band K Most prominent line Relative Intensity enhances with the number of layers shift~1/n;chemical doping?

12 D-Band-Double Resonance Phonon momentum at edge of Brillouinzone 1 and 2 phonon processes General character: wavelength dependence and difference for changing number of layers Single phonon process Induced by defects Two phonon process

13 D-Band 4 th order transition 1.e excitation 2.e-phonon scattering 3.defect scattering 4.E-hole recombination To mention: influence of number of layers ~1eV>>E(phonon)

14 2D-Band Wavelength dependent Dependent on number of layers 4 th order transition 1.e excitation 2.e-phonon scattering 3.Phonon with opposite momentum 4.E-hole recombination 2 phonon process Line shape and position sensitive to the number of layers

15 Graphene bi layer 2 inequivalent sublattices Splitting into 4 bands

16 Graphene bi-layer Difference to single layer and bulk graphite Level splitting due to splitting in electron bands


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