1. Nanoimprint II

2. NIL Technology sells stamps for nanoimprint lithography (NIL) and provides imprint services. Stamps made in Siliocn, Quartz, and Nickel are offered. Large area homogeneous imprints are ensured with NIL Technology stamps by a patent pending stamp technology. The stamps are produced with customer defined stamp patterns. Large area homogeneous imprints (patent pending) Standard stamp structures down to 20 nm Minimum stamp structure size below 20 nm Up to 200 mm wafer stamps Stamp materials: Silicon, Quartz, and Nickel NIL technology stamps can be used in many different applications such as (but not limited to): Consistent energy, e.g. solar cells and fuel cells, Batteries, Micro and nano fluidics, Light emitting diodes and lasers; Life science, e.g. controlled cell behaviour surfaces and lab-on-a-chip systems; Optics, e.g. gratings, integrated optical devices, SERS substrates, and anti reflective structures; Radio frequency (RF) components Data storage, e.g. optical media, magnetic media, and holograms; Security, e.g. holograms; CPU ’ s and memory. Interested partners are invited to join collaborations with NIL Technology on developing products benefiting from nanostructures and NIL.

3. Limitations of NIL

4. Feather Depth Variation for Complex Patterns

5. Combined Nanoimprint and Photolithography

6. Residual Resist Removal in CNP

7. Eliminates Residual-removal by O 2 RIE

10. Step and Flash Imprint Lithography

13. Solvent Assisted Imprint Solvent vapor treatment

14. Solvent Assisted Imprint

15. Room Temperature Imprint

19. Pattern Uniformity Control

20. Comparison

21. Conclusions Use of free volume contraction and plastic deformation Room temperature processing No mold surface treatment Step and repeat Multiple imprinting Suitability for OLEDs and OTFTs A high pressure (30~100 bars)

22. Low Pressure Imprinting Use of a flexible film mold Conformal contact of protruding parts of the mold with the underlying substrate Sequential, not parallel, imprinting of pattern features (stiff mold; all the pattern on the surface to penetrate into polymer)

23. Low-Pressure Hot Imprinting

24. Poly (urethane acrylate) molds Low-pressure room temperature imprinting

26. Conclusions for Low-Pressure Room Temperature Imprinting Requirements: Low pressure (2~3 bars) Low temperature (room T) Step-and-repeat Easy and clean de-molding Variable fill factor Easy mold replication Multilayer alignment

27. Other Non-Conventional Methods 1. By capillary force Capillary Force Lithography (CFL) Soft molding 2. By dewetting force Anisotropic dewetting Selective dewetting 3. By self-organization Self-organized CFL Self-organized buckling

29. Capillary Force Lithography: Concept

31. Kinetics of CFL (I)

35. Conclusions Use of thermal capillary Good pattern fidelity Direct exposure of substrate surface No application of pressure Minimum feature size down to ~ 100 nm When pattern size gets smaller than 100 nm, the max aspect ratio of the gap attainable is less than 0.25 (may be broken during detachment of mold).

38. Soft Molding: Conclusions Use of solutal capillarity Inexpensive method Three-dimensional patterning Large-area patterning (~ 4 inch wafer) No fidelity problem Direct pattern transfer to a substrate

40. Patterning by Dewetting – Historical Background Anisotropic and Selective Dewtting

41. Anisotropic spinodal dewetting as a route to self-assembly of patterned surfaces A. M. Higgins & R. A. L. Jones Nature 404, 476 - 478 (2000).

43. Anisotropic Dewetting: Theory

44. Anisotropic Dewetting: Conclusions Dewetting of thin polymer films Anisotropic dewetting by mold confimement Block vs Fingering pattern Formation of ordered polymer pattern Reduced wavelength due to confinement

45. Selective Dewetting: Concept

46. Selective Dewetting: Result

47. Selective Dewetting: Conclusions Selective Dewetting by Mold Nucleation General purpose patterning by selective dewetting Pattern size control by dewetting time Controllability to the level of 10 nm scale

48. Patterning by Self-Organization Self-organized polymeric microstructure (SOM) Self-organized patterns by anisotropic buckling

49. Historical Background Use of chemical forces such as self-assembled monolayers (SAM) Control of chemical or structural properties, chemical sensing, catalysis, etc. Ordering on a nanometer scale Difficulty in large-area applications Use of physical driving forces such as capillarity Control of microstructures of surfaces, ex) patterning, photonic crystals, microreactor, etc. Ordering on a micrometer scale No difficulty in large-area applications

50. Self-Organized Microstructure: Concept