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Charged Particle Tracker for a RHIC/EIC joint detector Detector layouts based on EIC and NLC Physics drivers Silicon detector technologies Simulations based on different layouts Rene Bellwied, Wayne State University RHIC/EIC joint detector discussion, BNL, Sept.19th
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The EIC detector concept
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The EIC parton detector concept Magnetic field strength: ?
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For comparison: two LC detector options Both detector options have now all calorimetry inside the magnet. Old B = 5 T B = 3 T
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Large detector option for LCD
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Silicon detector option for LCD
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Central tracker: Silicon Drift Detectors Five layers Radiation length / layer = 0.5 % sigma_rphi = 7 m, sigma_rz = 10 m Layer Radii Half-lengths ----------- ------------ 20.00 cm 26.67 cm 46.25 cm 61.67 cm 72.50 cm 96.67 cm 98.75 cm 131.67 cm 125.00 cm 166.67 cm 56 m 2 Silicon Wafer size: 10 by 10 cm # of Wafers: 6000 (incl. spares) # of Channels: 4,404,480 channels (260 m pitch) Silicon detector option for LCD (small detector, high field B=5T) Forward tracker: Silicon Strip Five disks uniformly spaced in z Radiation length / layer = 1.0 % Double-sided with 90 degree stereo, sigma = 7 m Inner radii Outer radii Z position ----------- ----------- ---------- 4.0 cm 20.50 cm 27.1 cm 7.9 cm 46.75 cm 62.1 cm 11.7 cm 73.00 cm 97.1 cm 15.6 cm 99.25 cm 132.1 cm 19.5 cm 125.50 cm 167.1 cm Vertex detector:CCD 5 layers uniformly spaced (r = 1.2 cm to 6.0 cm) Half-length of layer 1 = 2.5 cm Half-length of layers 2-5 = 12.5 cm sigma_rphi = sigma_rz = 5 microns Radiation length / layer = 0.1 %
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The SCT Semiconductor Tracker 4 barrels 9 wheels 5.6 m 1.04 m 1.53 m 4088 Modules ~ 61 m 2 of silicon 15,392 silicon wafers ~ 6.3 million of readout channels Barrel diameters: B3: 568 mm B4: 710 mm B5: 854 mm B6: 996 mm
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9,648,128 strips = electronics channel 440 m 2 of Si wafers, 210 m 2 of Si sensors CMS Silicon Detector
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Physics Drivers (e.g. for NLC)
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Technical Issues (1)
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Technical Issues (2)
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Technical Issues (3)
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Stripixels:something new from BNL (why ? SDD’s might be too slow) Alternating Stripixel Detector (ASD) Interleaved Stripixel Detector (ISD) Pseudo-3d readout with speed and resolution comparable to double-side strip detector (Zheng Li, BNL report, Nov.2000)
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The SVT in STAR The final device…. … and all its connections … and all its connections
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STAR-SVT characteristics 216 wafers (bi-directional drift) = 432 hybrids 3 barrels, r = 5, 10, 15 cm, 103,680 channels, 13,271,040 pixels 6 by 6 cm active area = max. 3 cm drift, 3 mm (inactive) guard area max. HV = 1500 V, max. drift time = 5 s, (TPC drift time = 50 s) anode pitch = 250 m, cathode pitch = 150 m SVT cost: $7M for 0.7m 2 of silicon Radiation length: 1.4% per layer 0.3% silicon, 0.5% FEE (Front End Electronics), 0.6% cooling and support. Beryllium support structure. FEE placed beside wafers. Water cooling.
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Typical SDD Resolution
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Wafers: B and T dependence Used at B=6T. B fields parallel to drift increase the resistance and slow the drift velocity. The detectors work well up to 50 o C but are also very T- dependent. T-variations of 0.1 0 C cause a 10% drift velocity variation Detectors are operated at room temperature in STAR. We monitor these effect via MOS charge injectors
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Present status of technology STAR 4in. NTD material, 3 k cm, 280 m thick, 6.3 by 6.3 cm area 250 m readout pitch, 61,440 pixels per detector l SINTEF produced 250 good wafers (70% yield) ALICE 6in. NTD material, 2 k cm, 280 m thick, 280 m pitch l CANBERRA produced around 100 prototypes, good yield Future 6in. NTD, 150 micron thick, any pitch between 200-400 m l 10 by 10 cm wafer
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Silicon Drift Detector Features Mature technology. <10 micron resolution achievable with $’s and R&D. Easy along one axis (anodes). <0.5% radiation length/layer achievable if FEE moved to edges. Low number of channels translates to low cost silicon detectors with good resolution. Detector could be operated with air cooling at room temperature
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Expected Impact Parameter Resolution
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Results for b/c tagging performance
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Expected Momentum Resolution
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SD Tracking efficiencies: For 100% hit efficiency: (97.3±0.10)% For 98% hit efficiency: (96.6±0.12)% For 90% hit efficiency: (92.7±0.16)% Tracking efficiencies: For 100% hit efficiency: (95.3±0.13)% For 98% hit efficiency: (94.5±0.14)% For 90% hit efficiency: (89.5±0.20)% LD Tracking efficiencies LD vs. SD
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SD For hit efficiency 100%: Missing energy = (5.7±0.4) GeV = (3.3±0.2)% Ghost energy = (4.8±0.4) GeV = (2.9±0.2)% For hit efficiency 100%: Missing energy = (11.7±0.6) GeV = (7.1±0.3)% Ghost energy = (19.6±0.8) GeV = (13.1±0.6)% LD Missing and ghost energies
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With the maximum of d3p distribution at ~(1.5-2) 10 -3, the data are consistent with the earlier momentum resolution simulations (B. Schumm, VR, et al): within a factor of ~2 in the momentum range of 0.5 GeV/c < p T < 20 GeV/c. Preliminary conclusions Momentum resolution With the existing 3d tracking and pattern recognition software (Mike Ronan et al.) the Silicon option has a slight advantage in tracking efficiency, shows less missing and ghost energy, and less ghost tracks)
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R&D for Large Tracker Application Improve position resolution to 5 m Decrease anode pitch from 250 to 100 m. Stiffen resistor chain and drift faster. Improve radiation length Reduce wafer thickness from 300 m to 150 m Move FEE to edges or change from hybrid to SVX Air cooling vs. water cooling Use 6in instead of 4in Silicon wafers to reduce #channels. More extensive radiation damage studies. Detectors/FEE can withstand around 100 krad ( ,n) PASA is BIPOLAR (intrinsically rad. hard.) SCA can be produced in rad. hard process.
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The CLEO detector
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The CLEO calorimeter CLEO II quadrant view Calorimeter specs: 7,800 Th doped CsI crystals (6,144 in barrel) Each crystal 5 by 5 by 30 cm Angular Resolution ~5-10 mrad Barrel resolution: E /E (%) = 0.35/E 0.75 + 1.9 - 0.1E Endcap resolution: E /E (%) = 0.26/E + 2.5 = 2-3% for 1 GeV e - or
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