1. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 3D detector technology at CNM

2. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 2 Motivation Short distance between electrodes: low full depletion voltage short collection distance  more radiation tolerant than planar detectors!! No charge sharing DRAWBACK: Fabrication process rather long and not standard => mass production of 3D devices very critical and very expensive. S.I. Parker, C.J. Kenney, J. Segal, Nucl. Instr. Meth. Phys. Res. A 395 (1997) 328

3. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 3 Applications Imaging Radiation Hardness *Dear-Mama: A photon counting X-ray imaging project for medical applications, Nuclear Instruments and Methods A 569 (2006) 136–139 *

4. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 4 Layout and simulation G. Pellegrini Presented at the 2nd Trento Workshop on Advanced Silicon Radiation Detectors, Trento, 2006. Available online at: http://tredi.itc.ithttp://tredi.itc.it ISETcad 3D Simulation D. Pennicard, “Simulation Results from Double-Sided 3D Detectors”, presented at the 2006 Nuclear Science Symposium.

5. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 5 Medipix2 Diodes 2D spreading Test structures Atlas pixel 3d pads strips Long strip 10x10 matrix MOS Test for SEM Mask design 3x3 matrix Pilatus

6. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 6 ALCATEL 601-E - Deep RIE-ICP. - Load-lock manual one 4” wafer - SF 6 etching -C 4 F 8 passivation -cooled mechanical clamping :He-Ln2 -Possibility of Cryogenic etching. SubstrateGases SiliconSF 6, C 4 F 8 Silicon Dioxide C4F8 C4F8 Silicon NitrideSF 6, C 4 F 8 Silicon CarbideSF 6,O 2 G. Pellegrini et al., “Technology development of 3D detectors for high-energy physics and imaging” Nuclear Instruments and Methods A 487, Issues 1-2, 11 July 2002, Pages 19-26.

7. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 7 Aspect Ratio 10  m holes 55  m pitch 90 minutes etching 300  m thick wafer Aspect ratio 24:1 G. Pellegrini et al. “Double Sided 3D Detector Technologies at CNM-IMB” submitted to IEEE TNS

8. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 8 Polysilicon Polysilicon Thickness=3  m Poly etched with RIE Standard resist mask 9.4  m 2.9  m

9. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 9 Spreading resistance Doping diffusion Phosphorus Polysilicon thickness 2  m

10. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 10 Doping diffusion, Phosphorus Junction Depth=660nm Polysilicon Thickness=2  m Phosphorus diffusion Temp.=1050ºC topbottom

11. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 11 Doping diffusion, Boron wafer number Sheet Resistance (  /sq) sigmaTemp Extra time 11,12% T0+T0+ No 20,973% T0+T0+ Yes 31,82%T0T0 No 41,41%T0T0 Yes 52,92% T0-T0- No 62,62% T0-T0- Yes Polysilicon Thickness=3  m Simulation and experimental results

12. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 12 Doping diffusion, Boron 2.9  m TEOS Poly Junction n p+p+ 10  m Boron diffusion Wafer 3

13. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 13 Characterization Characterization performed jointly between Glasgow, Liverpool, IFIC (Valencia ) and CNM (Barcelona) I-V, C-V, and Charge Collection with beta source ( 90 Sr) and IR laser at low temperature. Development of a general purpose electronics readout based on LHCb (Beetle) chip * * R. Marco et al. Alibava : A portable readout system for silicon microstrip sensors. 12th Workshop on Electronics for LHC and Future Experiments. September 2006, Valencia SPAIN ATLAS SCTDAC readout for p-type sensors

14. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 14 Glasgow 3D work Glasgow/Diamond signed a contract to work on 3D detector development with: IceMOS Tech Ltd (Belfast) N.I. Semiconductor company specialized in: Trench etch and refill technology Thinning Wafer bonding In house ability for all required stages to make 3D detectors First stage to perform test runs on processing stages Dense high aspect ratio hole arrays Hole doping and filling optimisation Second stage : Full 3D detectors Pixel devices (Medipix and Pilatus) Strip devices Pad detectors All readout via p-type holes only Full detectors by Q1-Q2 2007

15. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 15 Bump bonding test structures Central ground bus d-side Probe card test pads c-side M. Ullán et al., “Test structure assembly for bump bond yield evaluation in high density flip chip technologies”, Microelectronics and Reliability, Vol. 46, no. 7, Jul 2006, Pages 1095-1100 The total yield of the assembly (Y) can be written in terms of the ratio of bad chains to good chains (  ) as:

16. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 16 Stripixel 3d Ready to be tested and irradiated Z. Li, W. Chen, Y.H. Guo, D. Lissauer, D. Lynn, V. Radeka, M. Lozano, G. Pellegrini “Development of New 3d Si Detectors at BNL and CNM” Submitted to TNS IEEE Joined fabrication between BNL and CNM

17. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 17 INTAS project with CERN for the fabrication of next TOTEM detectors. G. Ruggiero et al., “Planar Edgeless Silicon Detectors for the TOTEM Experiment”, Nuclear Science Symposium Conference Record, 2004 IEEE Volume 2, 16-22 Oct. 2004 Page(s):922 - 924. Edgeless detectors

18. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 18

19. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 19

20. Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain 20 Conclusions CNM clean room facilities are ready for small production of 3D detectors. First 3D detectors ready for the end of January 2007. Commercial partner ready for R&D. Manpower: IFIC (2), Glasgow (5), CNM (3) Characterization of 3D detectors: IFIC and Glasgow: beta and laser setup, simulation CNM: IV,CV and imaging Contribution to the R&D: design, simulation, fabrication, bump bonding, characterization, radiation hardness, imaging. Expression of interest from different institutes for the b-layer replacement in the future Atlas upgrade experiment.