1. Institute of Microelectronics Dr Androula Nassiopoulou
NCSR Demokritos
Dr Androula Nassiopoulou
Director

2. ORGANIZATIONAL STRUCTURE OF NCSR DEMOKRITOS
Ministry of Development
General Secretariat for Research and Technology
NCSR DEMOKRITOS
Central administration
Department for Technical Support
Secretariat of Special Accounts
Liaison Office
Technology Park
Institute of Microelectronics (IMEL)
Institute of Nuclear Physics
Institute of Nuclear Technology
Institute of Materials Science
Institute of Chemistry
Institute of Informatics and Telecommunications
Institute of Biology
Institute of Radioisotopes & Radiodiagnostic Products

3. ACADEMIC AND TECHNOLOGICAL EXCELLENCE AT IMEL
20 years of research and technology development
Achievements:
Infrastructure and research facilities for Micro and Nanotechnology unique in Greece
Fully equipped silicon processing laboratory
E-beam lithography equipment
Micromachining and Sensor laboratory
Fully equipped laboratory for characterization of materials, devices and structures
Important know-how
Experienced personnel
An Intellectual property portfolio, which continues to expand

4. IMEL Institute Director Program I: Micro and Nanotechnologies
International Scientific Advisory Committee
Institute Administration and Technical Support
Institute Advisory Board
Secretariat
Managerial office - provisions
Education and training
Group of technicians for technical support
Program I: Micro and Nanotechnologies
Program III: Micro and Nano-Systems
Program II: Micro and Nanoelectronics
Services in Micro, Nanotechnologies and Microsystems
Central facilities for Silicon Processing

5. PATTERNING TECHNOLOGIES Lithography and Plasma Etching
FOCUS OF RESEARCH
Development of novel materials, processes and process simulation methods for micro and nanofabrication
Key Researchers: M. Hatzakis, IBM fellow and ex-director of IMEL
E. Gogolides
P. Argitis
N. Glezos

6. Frontiers in Lithography (193 / 157nm, EUV, e-beam),
Nano-patterning, MEMS and BioMEMS patterning
Smaller Devices  Smaller λ in optical lithography:193, 157nm, EUV, e-beam
Bio Mems Patterning
Need to develop new resists and processes
Thick (0.4μm) to Ultra thin (0.15μm) resist films
Need to increase plasma resistance of photoresists
Critical dimension becomes less than 70nm
Need to Reduce Line Edge Roughness
The problems
Develop new resists: aliphatic to fluorinated or Silicon containing polymers
Develop new environmentally friendly and biocompatible photoresists
Add etch resistance compounds in resist formulation
Understand and Simulate Line Edge Roughness using Fractal Theory
Develop lithography and plasma etching simulators
Develop new etching processes for MEMS and Nanotechnology
The solutions

7. Frontiers in Optical Lithography (193 - 157 nm)
New resists for 193nm lithography
Single layer acrylate. Positive, 93nm lines, Negative 150nm lines; P. Argitis et al. Greek Patent
C. Diakouakos et al. Microelec. Engng. 2001
Bilayer resist for 157nm based on Siloxanes. 70nm lines
A. Tserepi et al., J. Vac. Sci. Technol. Nov ,
Microelec. Engng. 2001
Novel etch resistance compounds synthesized for use as resist additives

8. Si and SiO2 Etching in Fluorocarbon Plasmas
Dielectric Etching, Optoelectronics and MEMS etching
Fluorocarbon plasma and HDP reactors used
Both Experimental and Theoretical Work
Many problems (RIE lag, etch stop, Inverse RIE lag, roughness)
New processes needed in ICP tools, with reduced roughness, for both MEMS and Nanotechnology
Detailed models for etching in fluorocarbon plasmas
Prediction of ASPECT RATIO dependent phenomena

9. SEMICONDUCTOR NANOSTRUCTURES
SEMICONDUCTOR NANOSTRUCTURES. Materials, Processes, Properties and Nanoelectronic Devices
FOCUS OF RESEARCH
Nanopatterning (nanostructuring using the “top-down” approach)
Silicon nanocrystal growth and characterization
Si/SiO2 multilayers and superlattices
Si/CaF2 multilayers and superlattices
Silicon and Germanium nanocrystals in SiO2 by different techniques
Nanoelectronic devices for memory, light emitting and other applications
Theoretical work, process and device modeling
Key Researchers: A.G. Nassiopoulou
D. Tsoukalas
P. Normand

10. Candidates for Non-Volatile Dynamic Memory Applications
Si-Nanocrystal MOS Memory Devices Obtained by Low-Energy Ion-Beam-Synthesis
Candidates for Non-Volatile Dynamic Memory Applications
ESSDERC’2000, Appl. Phys. Lett. 2000

11. SILICON SENSORS AND MICROSYSTEMS
FOCUS OF RESEARCH
Silicon micromachining techniques and processes
Silicon sensor devices and microsystems
Modeling, characterization and testing of sensors
Microsystem design, fabrication and characterization
Development of read-out electronics and packaging

12. NOVEL PROCESS FOR THE FABRICATION OF SUSPENDED MEMBRANES FOR THERMAL SENSORS
The process is based on the isotropic etching of silicon using High Density Plasma etching.
High lateral etch rates can be achieved (6-7μm/min).
The process is CMOS compatible.
Oxide/nitride membranes with dimensions 100x100μm2, can be easily fabricated.
100μm

13. WAFER BONDING USED IN SENSOR TECHNOLOGY
Apply wafer bonding technique
Pressure sensors
Dry release processes and vapour sensing
A technology to combine heterogeneous functions

14. 3D View of pressure Sensor SEM cross section images

15. COMBINING DRY RELEASED CANTILEVERS WITH POLYMERS TO MEASURE HUMIDITY
Parallel beam to substrate
Stress effect

16. INTEGRATED SILICON OPTICAL BIOSENSORS
Monolithically Integrated Silicon Light Emitters, Optical Fibers and Detectors.
Optical Coupling Efficiency 40%.
High Stable and Repeatable Measurements of the Detector Photocurrent.
Five Mask Process with Standard IC Technology

17. MICROELECTRONIC DESIGN FOR FUTURE OE LINKS
FOCUS OF RESEARCH
Develop innovative ICs for optoelectronic links
Implement phenomenological models for optoelectronic devices (photodiodes, VCSELs, etc.) in IC design environment
Develop a wafer-scale integration technology for high-density OE links

18. IMEL’s infrastructure 1
Silicon processing equipment (unique in Greece)
Clean room area of 300 m2
Laminal flow chemical benches
Thermal processing
Chemical Vapor Deposition
Thermal evaporation (sputtering, e- gun evaporation)
Ion implantation
Optical lithography systems
Electron beam lithography system
Plasma Processing (RIE, ICP)
Process Inspection equipment

19. IMEL’s infrastructure 2
Characterization equipment
Electrical characterization equipment
Probe stations
Optical characterization
Microscopy equipment, ellipsometry
Sensor characterization (gas, flow, pressure)
Packaging equipment (Dicing saw, wire bonding, die bonder)
Chemistry laboratory
Design and modeling / simulation tools
7 Workstations (2HP C160, 1HP 9000/785, 2 Sun Sparc 20, 2 Sun Sparc Ultra 1, 1HP 9000/720)
Design software (Mentor graphics: 4 seats, Cadence: 2 seats, synopsis: 2 seats, orcad for PCBs), MEMCAD 4.6, ANSYS and Silvaco softwares.

20. PERSONNEL Total Research Scienctists 11 Research engineers 2
Post doctoral scientists 6
Phd students
Technicians 3
Administrative personnel
Personnel on contract: a) Scientific
b) Technicians 4
Total 45

21. EDUCATION AND TRAINING DEVELOPMENT OF HUMAN RESOURCES
IMEL COORDINATES AN EDUCATIONAL PROGRAMME (EPEAEK) ON MICROELECTRONICS FOR MASTER AND PhD DEGREES-IN COLLABORATION WITH THE UNIVERSITY OF ATHENS
Start-date :1/10/1998
Duration of the programme related to the MSc degree : 18 months
Duration of PhD cycle : 4 years
Number of students : 15 / year
IMEL is partly engaged in two other MSc and PhD programs in collaboration with the National Technical University of Athens (New materials) and the University of Patras (System design) respectively.
IMEL organizes every year :
Summer Schools on selected areas, addressed to graduate students.
Training courses, addressed to research scientists, engineers and technicians.
Conferences, workshops etc.

22. A CENTER OF EXCELLENCE IN MICRO, NANOTECHNOLOGIES AND MICROSYSTEMS
YEAR 2002
A CENTER OF EXCELLENCE IN MICRO, NANOTECHNOLOGIES AND MICROSYSTEMS
AT IMEL/NCSR “DEMOKRITOS”
A Center of Excellence in Micro, Nanotechnologies and Microsystems has been established in the year 2002 at IMEL/NCSR “Demokritos”, supported by the Greek General Secretariat for Research and Technology in the Ministry of Development.

23. MAIN OBJECTIVES
To further promote long term research into understanding phenomena, mastering processes and developing research tools.
To promote development of fundamental knowledge
To promote development of novel products and production processes
To develop human potential by educational and training activities
To develop the access to services in advanced processes and high technology
To promote the transfer of technology to industry.
To further promote cooperative research and technological and educational activities

24. RESEARCH ACTIVITIES IN THE ABOVE FIELDS
Micro and Nanofabrication
Optical lithography and lithographic materials
Electron beam lithography.
Etching processes
Thermal processes
Thin film deposition techniques
Nanoelectronic devices for integrated circuits
Single electron transistors, resonant tunneling devices, molecular devices and interconnections of devices
Optical and optoelectronic links
Self-assembled building blocks for nanoscale ICs
New electronic materials
Seniconductor nanocrystals and other low dimensional structures in different isolating matrices
Molecular materials
Microsystems and Sensors

25. MMN Greek Network on Microelectronics, Microsystems and Nanotechnology
Main objectives
To promote collaboration between all national organizations involved in Microelectronics, including research centers, universities and private sector.
To develop mechanisms to promote awareness of worldwide scientific and technological development
To develop cooperative educational and training activities, in order to increase the human potential of trained people in the above technologies