1. ECE4430 Project Presentation
BETA-MULTIPLIER REFERENCE GENERATOR
BANDGAP REFERENCE GENERATOR
GROUP3 – DEBASHIS BANERJEE
JASON PINTO
ASHITA MATHEW

2. DESIGN SPECIFICATIONS
Technology Node – TSMC 0.18µm Required Design Specifications
Supply voltage
1.2 V
Vref
0.7 V
Iref
15µA
Max Supply Sensitivity
1000ppm
Max Temp Sensitivity
º C
Max Power consumption
20uW

3. BMR -TOPOLOGY USED

4. BMR- DESIGN CALCULATIONS
Using these we get:
Sweeping to set current, we get

5. BMR- ACHIEVED SPECIFICATIONS
Parameter
Values 1
Supply (V)
1.2 V 2
Supply Sensitivity (ppm)
611.9 3
Temp Sensitivity 37˚C)
1e06 ppm(Iref),
.99e06 ppm(Vref) 4
Iref (uA)
15.15 5
Iref with ΔVTHn = 10%
0.02µA 6
ΔIref with ΔVTHp = 10%
1.818nA 7
ΔIref with ΔR= 10%
3.585µA 8
Minimum Supply Voltage(mV)
646.4 9
Maximum Supply Voltage(V)
1.7
Parameter
Values 10
TCIref (ppm/˚C)
3323 11
TCVref (ppm/˚C)
3202 12
Power Consumption (µW)
50.23 13
Resistor Value (KΩ)
5.67KΩ

6. Startup transient response
Vref- VDD Sweep
Iref- VDD Sweep
Vref= 0.718V
Startup transient response
Startup time:460.6nsec

7. Current sensitivity with supply voltage = 611.9ppm @37˚C
Voltage sensitivity with supply voltage=

8. PSRR of Vref = 40dB
PSRR of Iref
PSRR of Iref = 125e6 mho
PSRR of Vref

9. Iref changes by 1.818nA for +-10% variation in Vthp
Iref changes by 0.02uA for +-10% variation in Vthn

10. TCIref of 3323 ppm/ ˚C at 37 ˚C
TCVref of 3202ppm/ 37˚C

11. BGR TOPOLOGY USED

12. DIFFERENTIAL AMP STRUCTURE

13. BGR DESIGN CALCULATIONS
With the above values of L,N,R we observed that the ICTAT and IPTAT fail to cancel out exactly at 37 deg C. So through simulations we have adjusted R,L,N to obtain the desired characteristics.
The values obtained are
L = 8.5, N=4.84, R= 9.84K

14. ACHIEVED SPECIFICATIONS
Parameter
Specs obtained 1
Supply (V)
1.2 V 2
Vref (V)
0.698V 3
Supply Sensitivity (ppm)
5213ppm 4
Temp Sensitivity 37C)
0.39ppm 5
Power consumption (uW)
63uW 6
Iref (uA)
14.69uA 7
ΔIref with ΔVTHn = 10%
124.8nA 8
Δ Iref with ΔVTHp = 10%
1.925nA 9
ΔIref with ΔR= 10%
3.1uA 10
Minumum Supply Voltage
901mV 11
Maximum Supply Voltage
2.786V 12
TCIref
0.13ppm/deg C 13
TCVref (ppm)
1.258e-3 ppm/deg C 14
PSRR for Vref
53.2dB 15
PSRR for Iref
2.18e+7 mho

15. Vref – Voltage Sweep Iref – Voltage Sweep Vref- Temp Sweep
Vdd min =901mV
Vdd min =904mV
Vdd max =2.786V
Vdd max =2.788V
Vref =0.697V
Iref =14.61uA
Vref- Temp Sweep
Iref- Temp Sweep C C

16. Voltage Sensitivity - Vref Voltage Sensitivity - Iref
TCVref
TCIref
Temp sensitivity = 0.39ppm
Temp sensitivity =4.15ppm
Voltage Sensitivity - Vref
Voltage Sensitivity - Iref
Volt sensitivity = 5213ppm
Volt sensitivity = 5229ppm

17. PSRR for Iref PSRR for Vref Start up delay Power consumption
PSRR = 2.18*107 mho
PSRR = 53.2dB
Start up delay
Power consumption
Power consumption= 63uW
Start up delay = 189ns

18. Δ IREF WITH VTH VARIATION
Δ IREF for 10% variation in Vthp = 1.925nA
Δ IREF for 10% variation in Vthn = 124.8nA

19. DEVIATION FROM SPECS Parameter Specs BMR Specs Obtained
BMR Specs Error
BGR Specs obtained
BGR Specs Error 1
Vref (V)
0.7
0.718V
2.65%
0.698V
0.28% 2
Supply Sensitivity (ppm)
1000
611.9 (Iref)
-38.81%
5213 (Vref)
421.3% 3
Temp Sensitivity 37C) 10
1e06 (Iref)
.99e6 (Vref) -
4.1(Iref)
0.39(Vref) 4
Iref (uA) 15
15.15 1%
14.69
-2.06% 5
Power consumption (uW) 20
50.23
151.15% 63
215%

20. CONCLUSION
Temperature sensitivity was observed to be better in a BGR than compared to a BMR because there is PTAT and CTAT cancellation.
Voltage sensitivity is much better in BMR than in BGR.
Supply sensitivity is better with stacked devices , but since the supply voltage is small, we cannot use cascode topology.
Both BMR and BGR are supposed to work at low frequency. So we used a min value of L = 4*0.18um. This led to a high output impedance and hence lesser voltage sensitivity.
Careful design of a high gain differential amplifier would lead to a much better voltage sensitivity.

21. Thank you…
Questions??