1. Leading Technology for AMOLED Backplane and Encapsulation
Eric Sun
Technical Marketing Director
CTO Office
AKT Display Group
Applied Materials, Inc.
Display Innovation China 2014/Beijing
Date: Oct. 15, 2014

2. Display Technology Trend and Challenges

3. Display  Growing Visual Demand  The eyes have it!
EMOTION
IMMERSION
CONSUMPTION
INTERACTION
GROWING DEMAND
NEW TECHNOLOGIES 3

4. Display Technology Transitions
TRANSISTOR
DISPLAY
TODAY TV
55”
65”
>70”
LCD OR
OLED
SIZE
a-Si
Phone 5”
5.x”
<7” TV
FHD 4K 8K
RES.
Phone
>400ppi
>600ppi
>700ppi
LTPS OR
MOx
FLEX
OLED
Form Factor 4

5. AKT solutions_PVD

6. AKT PiVot® : Rotary PVD System for Array Backplane
Chinese Capacity
Meter² of
“. . . rotary targets are leveraging higher productivity and film quality to win a significant portion of new fab business.”
- DisplaySearch, July 2014

7. Rotary Cathode Array Enabling improved uniformity and defect control
Open (Spacious) Architecture Al Cu Mo
ITO
IGZO
Planar
Rotary
Programmable Magnet Wobble
Obstructed
Uniform
Gas Flow
Defect Control
Rotating Target
Planar
Rotary
Full-surface erosion “Self-Cleaning”
New
56 %
67 %
72 %
Minimum Nodules and Re-Deposition with Rotary
Clean Target Erosion over Life 7

8. Enhancing PVD Processes for LTPS
Optimize thickness & Rs unif. for better design rules; Reduce defects for Yield
Leverage rotary target & directional magnet control to increase step coverage
Ion bombardment & process tuning to minimize intrinsic film stress
Utilizing rotary target technology to decouple directional grain growth

9. ITO Optimization with H2 + O2 Process
Adjust H2 to control amorphous crystal ratio, etch rate & residues
Adjust O2 to control Rs & Rs uniformity
Providing next generation capability for Advanced LTPS

10. Optimizing IGZO Uniformity
Two routes towards more uniform reflectivity profiles
Ion Bombardment Control
Energetic oxygen ion bombardment locally increasing microwave reflectivity
Magnet movement improving as depo non-uniformities
PiVot can eliminate target imprints
IGZO Post Annealing
As depo non uniformities in µPCR can be reduced by annealing
µPCR 4.8% after annealing
Lonke: Wobble improve µPCD signal, but not annealed
Rechts: correlation µPCR signal with THK, after anneal
4.7% THK uniformity

11. Addressing Uniform MOx Electronic Properties
IGZO Layer (µPCD)
IGZO TFT Structures
Unif. ≈ 40%
No Magnet Wobble
4 TFTs for each position
Unif. < 5%
Optimized Wobble
No Vth difference between or in front of targets
Rotary Target Technology Mitigates Mura Effects for IGZO Backplanes

12. AKT solutions_PECVD & TFE for OLED

13. Gen6 PECVD Solution for High Resolution Display
Substrate size  1500x1850 mm2
System architecture  Single Substrate Operation System at Cluster Tool : Max. 5 PC (High Temperature Process Chamber)
: Annealing Chamber (Option)
: DSSL (Dual Single Slot Load Lock)
: Transfer Chamber
: High Temperature Dual Arm Vacuum Robot
High Temperature
Process Chamber (Max.5)
Annealing Chamber (Option)
Transfer Chamber
w/Dual Arm Vacuum Robot
Key Advantages
Uniformity
Particle Control
High System Reliability
DSSL (Dual Single Slot Loadlock)

14. CVD Advantages : Uniformity and Low Defect
IEEE
Innovation
Award
Patent
Protected
CVD Advantages : Uniformity and Low Defect
Diffuser with HCG
(Hollow Cathode Gradient)
Top-Down RPSC
(Remote Plasma Source Clean)
Plasma Uniformity Control
The AKT55KS system for Metal oxide PECVD applications provides advantages for both uniformity and low defects. The hollow cathode gradient diffuser provides superior plasma uniformity across the entire generation 8.5 substrate. The top down remote plasma source clean based on NF3 plasma cleaning provides an efficient chamber clean resulting in fewer defect particles and disassociation of green house gasses. AKT continues to demonstrate our superior capability to scale up PECVD processes while maintaining uniformity across large substrates up to Gen 10 which was recognized this year with the IEEE Innovation award for Applied Materials AKT PECVD group.
AKT-55KSは、均一性が高く、欠陥の少ない酸化物半導体用プラズマCVD膜を提供します。ホローカソードグラディエントディフューザーにより、第8.5世代の基板前面に非常に均一にプラズマを発生することができます。トップダウン式のリモートプラズマソースクリーニング装置によるエヌエフスリーベースのプラズマクリーニングにより、パーティクルを最小限にし、地球温暖化ガスの発生を最小限にしています。アプライド マテリアルズAKTのCVD装置は、均一性を維持しつつ、第10世代までの大型基板までスケールアップしてきました。今年の1月には、IEEEイノベーションアワードを受賞しました。
Uniform and Efficient Chamber Clean
Demonstrated
Uniformity up to Gen10

15. Uniform gas distribution
SiH4-SiO
Uniform gas distribution
Pressure Simulation
w/Gas Deflector
Uniformity ~11%
Uniformity ~4%
Conventional design
Enhanced diffuser assembly design for uniform gas distribution improves center dip profile on SiH4 based SiO process

16. CVD Film Requirements for Reliable MO-TFT
Back channel protection,
H-less Interface
Passivation to protect from attacking by OH and H2O
Back channel protection
during process
Substrate
a-IGZO G S D
BCE Structure
ESL Structure
Low defect, H- less Gate Insulator
Low defect H-less Gate Insulator
1.Because of IGZO properties, it’s electrical properties are very easy affected by hydrogen and atmosphere.
2.For front and back channel we need hydrogen-less insulator.
3.We also need passivation to prevent IGZO from the damage of outer atmosphere.
Right now most panel makers choose the ESL structure because the ESL can reduce plasma damage during the process.
H-less Interface
Low defect and H-less dielectric material is the requirement of gate insulator, etch stop and passivation for IGZO TFT for high reliability

17. “One Cluster Solution” _ TFE
Complete All TFE process in one cluster
Vacuum Connection to EV tool
Flexible Sequence control by MCC software
High reliability Mainframe and Vacuum robot
Mask deposition with Auto Mask Exchange and Mask Stocker
Concept
Mask Stocker
CVD Chamber
2nd Layer
Example
pp-HMDSO (SiCN)
3 Layer
5 Layer
Upper-stream
Load Lock
Lower-stream
Load Lock
OLED
EV Tool IN
OUT
Multiple Layer Stack
1st Layer
3rd Layer
SiN
SiN
CVD Chamber
TFE Technology for OLED mass production 

18. AKT OLED Solutions: Thin Film Encapsulation
Barrier: SiN
Buffer: SiCN
pp-HMDSO
Multilayer structures with SiN layer and SiCN/pp-HMDSO buffer layer
SiN/SiCN structure: For TV or Rigid Display Applications
SiN/pp-HMDSO structure: For Flexible Mobile Applications
Both TFE structures have passed customer device lifetime evaluation

19. TFE : PECVD SiN Barrier Films
SiN WVTR : 1x10-3 g/m2·day range at 1µm single layer SiN
@ 85°C/85%RH
(by MOCON and Ca-test method)
WVTR at 85°C/85%RH is about 2 orders higher than the ambient conditions
SiN properties (80°C process)
Film RI DR
A/min
Unif. % %T
@400nm
Stress
MPa
TFE SiN
1.85
> 2500
< 10%
> 90%
< 100
High optical transmittance (>90% at 400nm and above)
Excellent Barrier performance
High Depo. Rate

20. TFE : PECVD pp-HMDSO Buffer Films
>95% Transmittance
~0 Stress
3 Layer (SiN/HMDSO)
Plasma polymerized HMDSO (pp-HMDSO)
N2O
Hexamethylsiloxane (HMDSO)
Film RI DR
A/min
Unif. % %T
@400nm
Stress
MPa
pp-HMDSO
1.45
> 5000
< 10%
> 95%
~ 0 20

21. TFE : “Flowability” of pp-HMDSO Buffer Film
The buffer film we developed has a wide range of physical properties, from flowable liquid-like to rigid glass-like, depending on the process conditions
A flowable buffer film can cover a particle without leaving any voids or diffusion channel around it.
8µm x 4µm
Without high Stress Hot Point
(Better Particle Coverage)
No Sharp Corners Observed
on the particle
High optical transmittance (>95% at 400nm and above)
High Depo Rate
Excellent Particle coverage 21

22. TFE Layer Development Achievement
Step Coverage Profile
Non-conformal profile – planarization of surface irregularity
No high stress hot spots – minimize film cracking during bending
Particle Coverage
No voids around the particles – eliminate moisture permeation path
No high stress hot spots and good surface planarization
Stack Film Integration
Stress matching by adding interfacial layer
Transmittance improved to 400nm

23. Summary
AKT PECVD, PVD & TFE technology and system performance have been recognized by display customers and are ready for next generation LTPS TFT, MOx TFT and AMOLED application.
AKT PiVot PVD system with advanced rotary target design enable high uniformity and low defect for metal & oxide film.
AKT continues to innovate PECVD tool by developing differentiated, valuable and sustainable solutions to support our customers’ needs; focusing on film thickness uniformity, and ultra-low particle performance.
AKT new developed TFE system with proven cluster architecture offers superior barrier/buffer layers and excellent performance for flexible AMOLED.
AKT Solutions ready for next generation display with LTPS TFT, MOx TFT and AMOLED