1. TEORI DASAR HUBUNGAN SEMIKONDUKTOR
Hamzah Afandi, Antonius Irianto dan
Betty Savitri
Source: Millman, Jacob, Grabel, Arvin, Microelectronics,
Mc. Graw Hill Int. Ed., 1994.
Robert Boylestad, Louis Nashelsky
Sixth Edition; Prentice Hall,1997.

2. Review: Semiconductor Properties Variation
Intrisic Concentration vs Temperature:
Mobility vs Temperature: ; mn=2.5, mp=2.7 (100<T<400K)
Mobility vs Electric Field intensity:
~ 107 cm/s
103 V/cm
104 V/cm

3. Review: Currents in semiconductor
Drift Current:
Drill:
Calculate the conductivity of an extrinsic semiconductor with donor atom’s concentration of 1016 atom/cm3 (at 300K)!

4. Charge Density should maintain electric neutrality of crystal
REVIEW: The Physics of Electronics Carrier’s Concentration in extrinsic Semiconductor
Mass-Action Law
pn = ni2
Charge Density should maintain electric neutrality of crystal
For n-type semiconductor, NA = 0; thus:
For p-type semiconductor, ND = 0; thus:

5. Review: Currents in semiconductorJp
Diffusion Current:
Einstein Relationship between D and 
Concentration
p(x0)
p(x1) x0 x1 x
Dp = Diffusion Constant of Carrier

6. Review: Currents in semiconductor
Total Current: Jp
Concentration
p(x0)
p(x1) x0 x1 x

7. Review: Graded semiconductor
Concentration x x1 x2
p(x1)
p(x2)
V21 p1 p2
Jp = 0; in open circuited steady state condition

8. Hamzah Afandi, Antonius Irianto dan
pn JUNCTION DIODE
Hamzah Afandi, Antonius Irianto dan
Betty Savitri
Source: Millman, Jacob, Grabel, Arvin, Microelectronics, Mc. Graw Hill Int. Ed., 1994.

9. Open Circuited Junction
neutral
neutral
Semiconductors
Semiconductors
Holes
Electrons
p type
n type

10. Open Circuited Junction Junction Formation
p type
n type
Depletion Region
Space Charged Region

11. Open Circuited Junction Junction Formation
Charge Density (V) Wn
-Wp
p type
n type
Depletion Region
Space Charged Region

12. Open Circuited Junction Junction FormationWn
-Wp
Field Intensity ()
p type
n type
Depletion Region
Space Charged Region

13. Open Circuited Junction Junction FormationV0 Wn
-Wp
V = 0
Electrostatic Potential (V)
p type
n type
Depletion Region
Space Charged Region

14. Open Circuited Junction Junction Formation
Potential Barrier of electrons(V) Wn
-Wp V0
V = 0
p type
n type
Depletion Region
Space Charged Region

15. Closed Circuited Junction Forward Biased pn Junction
p type
n type
Depletion Region
Space Charged Region

16. Closed Circuited Junction Forward Biased pn Junction
p type
n type
Depletion Region
Space Charged Region

17. Closed Circuited Junction Reverse Biased pn Junction
p type
n type
Depletion Region
Space Charged Region

18. Closed Circuited Junction Reverse Biased pn Junction
p type
n type
Depletion Region
Space Charged Region

19. Closed Circuited Junction Reverse Biased pn Junction
p type
n type
Depletion Region
Space Charged Region

20. VOLT-AMPERE CHARACTERISTIC
 = 2 (Si)
 = 1.5 (Ge) ID V
-VZ VD
IS (A Scale)
Cut-in
Offest
Turn-on
Breakdown

21. Diode Circuit Analysis: Load-Line Concept+ _
VAA R VD ID ID
VAA /R
Solve for:
VAA = 3 V
R = 2 K
IDQ Q VD
VDQ
VAA

22. CALCULATION EXAMPLES
Given in class