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Strong coupling between Tamm Plasmon and QW exciton
E. Homeyer, C. Symonds, A. Lemaitre* , J.C. Plenet, J. Bellessa LPMCN (Laboratory of Physics of Condensed Mater and Nanostructures) University Claude Bernard Lyon 1, Lyon, France * LPN (Laboratory For Photonics and Nanostructures), Marcoussis, France PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
Outline Introduction Plasmon in GaAs/GaAlAs heterostructures Samples Plasmon / heavy- and light-hole exciton mixing Room temperature experiments Tamm plasmon states Description of Tamm plasmons Emission of Tamm/exciton polaritons Conclusion PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
Outline Introduction Plasmon in GaAs/GaAlAs heterostructures Samples Plasmon / heavy- and light-hole exciton mixing Room temperature experiments Tamm plasmon states Description of Tamm plasmons Emission of Tamm/exciton polaritons Conclusion PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
Introduction Surface plasmons Surface plasmon : Interface metal / dielectric material Metal Dielectric Damping ∟& // propagation TM Mode only Near a luminescent source (Dye or QW) Weak coupling regime Strong coupling regime PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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Plasmon in weak coupling regime
Introduction Plasmon in weak coupling regime Objective : enhancement of the spontaneous emission rate A Akimov et al., Nature. 450, 402 (2007) Enhancement PL : 2.5 x Coupling efficiency 60% For nanoparticles Okamoto K et al. Nature Mat. 3 (9) 601 (2004) A.Neogi, et al., Phys. Rev. B, 66,153305(2002) For active layers such as GaN/InGaN QW Enhancement SER 92 x Enhancement PL 17 x PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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Plasmon in strong coupling
Introduction Plasmon in strong coupling Strong interaction between plasmons and : Aggregated dyes. J. Bellessa, C. Bonnand, J.C. Plenet, J. Mugnier., PRL 93, (2004). T.K. Hakala et al. PRL (2009) Laser dyes such as Rhodamine 6G Rabi splitting energies up to 230 meV. Semiconductor nanocrystals arrays : CdSe dots under a thin silver film Rabi splitting of 112 meV D.E. Gomez et al. Nano Lett (2010) PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
Outline Introduction Plasmon in GaAs/GaAlAs heterostructures Samples Plasmon / heavy- and light-hole exciton mixing Room temperature experiments Tamm plasmon states Description of Tamm plasmons Emission of Tamm/exciton polaritons Conclusion PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
Plasmon in GaAs/GaAlAs heterostructures Samples GaAs QW (x5) Samples elaborated in collaboration with A. Lemaître (LPN) Decoupling with a silver grating : Silver Silver periodicity Λ = 250nm Metal Dielectric PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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Plasmon/heavy/light-exciton mixing
Plasmon in GaAs/GaAlAs heterostructures Plasmon/heavy/light-exciton mixing Reflectometry at 77K θ Anticrossing plasmon/Xlh Strong coupling between SP and excitons PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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Plasmon/heavy/light-exciton mixing
Plasmon in GaAs/GaAlAs heterostructures Plasmon/heavy/light-exciton mixing Dispersion relation Mixing of Xhh & Xlh Xhh Plasmon Xlh Polaritons : plasmon/ heavy hole exciton/ Light hole exciton VXhh=22meV VXlh=21meV J. Bellessa, C. Symonds, C. Meynaud, J.C. Plenet, E. Cambril, A. Miard, L. Ferlazzo, and A. Lemaitre. Phys. Rev. B 78, (2008). PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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Room temperature experiments
Plasmon in GaAs/GaAlAs heterostructures Room temperature experiments Still strong RT Rabi energy at resonance 20 meV No polaritonic luminescence is present PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
Outline Introduction Plasmon in GaAs/GaAlAs heterostructures Samples Plasmon / heavy- and light-hole exciton mixing Room temperature experiments Tamm plasmon states Description of Tamm plasmons Emission of Tamm/exciton polaritons Conclusion PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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Description of Tamm plasmons
Tamm plasmon states Description of Tamm plasmons Surface mode Bragg mirror / metal layer Very narrow linewidth Direct coupling to radiative light TE and TM modes Deep penetration length A. V. Kavokin, I. A. Shelykh, and G. Malpuech, Phys. Rev. B 72, M. E. Sasin, et al., Appl. Phys. Lett. 92, PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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Quantum wells in a Tamm structure
Tamm plasmon states Quantum wells in a Tamm structure Thick Bragg mirror to reduce the linewidth GaAs substrate AlAs Al0.05Ga0.95As 25 Silver film on top of the structure Tamm plasmon mode Silver film Inclusion of 2 InGaAs/AlGaAs QWs in the 15 last high refractive index layers 15 PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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Reflectometry experiments
Tamm plasmon states Reflectometry experiments Anticrossing between the exciton and the Tamm plasmon Rabi splitting : 12 meV Thin polariton lines compared to the splitting Simulations with a transfer matrix method PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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Luminescence of hybrid states
Tamm plasmon states Luminescence of hybrid states Strong emission at the low polariton energy Incoherent luminescence Emission in TE and TM polarisations PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
Conclusion Hybrid states plasmon/exciton in inorganic semiconductors Plasmon/Xlh/Xhh interaction energies of 21 and 22 meV Emission of Tamm plasmon/exciton polaritons PLMCN 2010, Cuernavaca, Mexico - April 15th 2010
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