1. Copyright © Infineon Technologies AG 2019. All rights reserved.
IPC CoolSiC™ discretes
Nomenclature
Aug.-2019
Copyright © Infineon Technologies AG All rights reserved.

2. 1200 V CoolSiC™ MOSFET discretesW
120 R
030 M1 H
Sales name
Company
I = Infineon
R = RDS(on)
As a separator between voltage and RDS(on)1)
Package type W = TO-247
Z = TO-247 4pin
BG = D2PAK 7pin
Device
M = MOSFET
NEW
RDS(on) [m]
Reliable grade
H: High gate voltage range
Blank: Industrial
Breakdown voltage
Divided by 10
120 = 1200 V
Series name M1 = Generation 1
1) CoolSiC™ MOSFET are marked with the typical RDS(on) instead of nominal current.
Marking pattern
(see technical data sheet) 12 M1 H
030
Breakdown voltage
Divided by 100
12 = 1200V
Series name M1 = Generation 1
Reliable grade
H: High gate voltage range
Blank: Industrial
RDS(on) [m]
Copyright © Infineon Technologies AG All rights reserved.
Copyright © Infineon Technologies AG All rights reserved.

3. 1200 V CoolSiC™ G5 Schottky diode02 G
120 C5
(B)
Sales name
Company
I = Infineon
Package type
H = TO220 R2L
M = DPAK R2L
W = TO247
WD = TO247 R2L
K = D2PAK R2L
G = Low thermal resistance
Breakdown voltage [V] /10
Device
D = Diode
NEW
NEW
Series name
5 = Generation 5
Continuous forward current
[A]
B = Common-cathode configuration
Marking pattern
(see technical data sheet) D 02 12
Device
D = Diode
Continuous forward current
[A]
Breakdown voltage [V] /100
Series name
C5 = Gen 5
B5 = Gen 5 in common-cathode configuration C5
Copyright © Infineon Technologies AG All rights reserved.
Copyright © Infineon Technologies AG All rights reserved.

4. Copyright © Infineon Technologies AG 2019. All rights reserved.
Copyright © Infineon Technologies AG All rights reserved.