1. Fig. 3 Transport characterization of dry-assembled devices.
Transport characterization of dry-assembled devices. (A) Optical image of a Hall bar device and four-terminal resistance as a function of back-gate voltage at 1.6 K (blue) and 300 K (black). (B) Conductance σ as a function of charge carrier density n for the device shown in (A). The green curve shows data measured on another sample with carrier mobility of μ = 350,000 cm2 V–1 s–1. (C) Derivative of the Hall conductivity σxy with respect to VBG as a function of magnetic field B and VBG for the device corresponding to the green curve in (B). Landau levels (LL) at filling factors ν = …, −10, −6, −2, 0, 2, 6, 10,… are clearly visible. Several LL exhibit full degeneracy lifting already at B = 6 T, see, for example, the appearance of LL at ν = −1, 1. (D) Plot of μD = σ/ne as a function of the charge carrier density for the device shown in (A) at 1.6 K. The dashed lines represent the mobilities extracted from (B). (E) Procedure to extract n*: two lines are fitted to the double logarithmic plot of σ as a function of n. (F) Mobility as a function of temperature for the device shown in (A).
Luca Banszerus et al. Sci Adv 2015;1:e
Copyright © 2015, The Authors