1. Latest Developments on SiPM for CTA

2. Previous Production Batch: CTA-HD2 shipped in July 2016 10 Wafers
6x6 mm2 SiPM
Standard NUV-HD Technology
Cell Size: 30 um

3. Previous Production Batch: CTA-HD2 Electro-Optical Characterization
≈ 100 kHz/mm2
@ 5 V of OV (CS 35 um):
DCR ≈ 100 kHz/mm2
PDE ≈ 55 %
DiCT ≈ 20%

4. Latest Productions
New production batches aimed to reduce the Cross-Talk
Technological improvements:
trench Filling for optical isolation of SPADS
Two batches:
CTA_HD-3: trench filling with high-contrast refractive index material stack
CTA_HD-4: trench coating with thin metal film (still ongoing)

5. Latest Productions Batch: CTA_HD-3
Strongly Reduced cross-talk at same OV with respect to standard NUV-HD
CTA_HD-2
CTA_HD-2
CTA_HD-3
CTA_HD-3
Slightly Lower PDE due to the lower FF with respect to the standard NUV-HD

6. Latest Productions
Batch: CTA_HD-3
≈ 30% less CT at the same PDE!

7. Latest Productions Batch: CTA_HD-4
The internal surfaces of the trench are coated with a thin metal film which reflects the light and isolates the spads
Tests are still ongoing
Some concerns about the effects of metal film on the electrical performance of the device