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E6 E6A – Semiconductor materials and devices: semiconductor materials; germanium, silicon, P-type, N-type; transistor types: NPN, PNP, junction, field- effect transistors: enhancement mode; depletion mode; MOS; CMOS; N-channel; P- channel
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Transistors Most transistors we use in amateur radio are made of silicon. Silicon is a semiconductor. It’s neither a conductor with a very low resistance, like copper, or an insulator with a very high resistance, like plastic or glass. You can manipulate the electrical characteristics of silicon by adding slight amounts of impurities to a pure silicon crystal. When transistor manufacturers add an impurity that adds free electrons to the silicon crystal, it creates a crystal with a negative charge. We call that type of silicon N-type silicon. N-type is a semiconductor material that contains excess free electrons. (E6A02) In N-type semiconductor material, the majority charge carriers are the free electrons. (E6A16)
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Transistors When you add other types of impurities to a pure silicon crystal, you can create a crystal with a positive charge. We call this type of material P-type semiconductor material. The majority charge carriers in P-type semiconductor material are called holes. P-type is the type of semiconductor material that contains an excess of holes in the outer shell of electrons. (E6A15)
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Transistors You can think of them as holes as spots in the crystal that accepts free electrons into. Because of that, the name given to an impurity atom that adds holes to a semiconductor crystal structure is call an acceptor impurity. (E6A04) Silicon isn’t the only semiconductor material used to make transistors. At microwave frequencies, gallium arsenide is used as a semiconductor material in preference to germanium or silicon. (E6A01)
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Semiconductor diodes Diodes are the simplest semiconductor devices.
A PN junction diode is formed when you join a bit of P-type material to a bit of N-type material. When you join the two materials, some electrons from the N-type material migrate over to the P-type material and fill holes there. As a result, holes form in the N-type material. This migration of charge forms what is called the depletion region at the PN junction, and an electric field forms across this region. The electric field generates a voltage across the junction.
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Semiconductor diodes The most important characteristic of a PN junction diode is that it only allows current to flow when it is forward-biased, that is to say when the voltage applied to the P-type material is more positive than the voltage applied to the N-type material. When a PN junction diode is reversed biased—that is when the voltage applied to the P-type material is more negative than the voltage applied to the N-type material—the diode will not conduct current. A PN- junction diode does not conduct current when reverse biased because holes in P-type material and electrons in the N-type material are separated by the applied voltage, widening the depletion region. (E6A03) This makes it impossible for current to flow through the region
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Bipolar junction transistors
Perhaps the most popular type of transistor is the bipolar junction transistor (BJT). Bipolar junction transistors are three-terminal devices, called the emitter, base, and collector. In an NPN transistor, the emitter and collector are N- type material and the base is P-type material. In a PNP transistor, the emitter and collector are P-type, while the base is N-type. The base is sandwiched between the collector and emitter, so there is a diode junction between the base and the collector and the base and emitter.
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Bipolar junction transistors
The circuit diagrams for these transistors are shown below.
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Transistor When the base-emitter diode is forward- biased, a current, called the base current will flow. A silicon NPN junction transistor is biased on when the base-to-emitter voltage of approximately 0.6 to 0.7 volts. (E6A07) If there is an appropriate voltage between the collector and emitter, this small base current will cause a much larger current to flow between the collector, through the base to the emitter. The amount of base current controls how much collector current flows. This is how transistors amplify signals.
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Transistor The change in collector current with respect to base current is the beta of a bipolar junction transistor. (E6A06) This is also sometimes called the hfe, or current gain, of a transistor. The change of collector current with respect to emitter current is the alpha of a bipolar junction transistor. (E6A05) Another important characteristic of a bipolar transistor is the alpha cutoff frequency. This is a measure of how high in frequency a transistor will operate. Alpha cutoff frequency is the frequency at which the grounded-base current gain of a transistor has decreased to 0.7 of the gain obtainable at 1 kHz. (E6A08)
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Field effect transistors
A field-effect transistor (FET) is a device that uses an electric field to control current flow through the device. Like the bipolar transistor, a FET normally has three terminals. The names of the three terminals of a field-effect transistor are gate, drain, source. (E6A17) FETs are normally made with a technology called Complementary Metal-Oxide Semiconductor, or CMOS. The initials CMOS stand for Complementary Metal-Oxide Semiconductor. (E6A13) FETs made with CMOS technology are sometimes call MOSFETs.
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Transistor In Figure E6-2 (below), schematic symbol 1 is the symbol for a P-channel junction FET. (E6A11) Schematic symbol 4 is the symbol for an N- channel dual-gate MOSFET. (E6A10)
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MOSFET One characteristic of the MOSFET is that they have a high input impedance. This makes them more attractive for use in many test equipment applications than bipolar transistors. How does DC input impedance at the gate of a field-effect transistor compare with the DC input impedance of a bipolar transistor? An FET has high input impedance; a bipolar transistor has low input impedance. (E6A14)
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MOSFET One disadvantage of using MOSFETs is that they are very sensitive to electrostatic discharge (ESD). Sometimes, they are damaged by static discharges so low that you never even see the spark or feel the shock. To reduce the chance of the gate insulation being punctured by static discharges or excessive voltages many MOSFET devices have internally connected Zener diodes on the gates. (E6A12)
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FETs Most FETs are enhancement-mode devices. When using an enhancement-mode FET, you must apply a voltage to the gate to get current to flow from source to drain. Some FETs are, however, depletion mode devices. A depletion-mode FET is an FET that exhibits a current flow between source and drain when no gate voltage is applied. (E6A09)
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E6A01 | In what application is gallium arsenide used as a
semiconductor material in preference to germanium or silicon? A. In high-current rectifier circuits B. In high-power audio circuits C. In microwave circuits D. In very low frequency RF circuits
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E6A01 (C) | In what application is gallium arsenide used as a semiconductor material in preference to germanium or silicon? A. In high-current rectifier circuits B. In high-power audio circuits C. In microwave circuits D. In very low frequency RF circuits
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E6A02 | Which of the following semiconductor materials contains excess free electrons?
A. N-type B. P-type C. Bipolar D. Insulated gate
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E6A02 (A) | Which of the following semiconductor materials contains excess free electrons?
A. N-type B. P-type C. Bipolar D. Insulated gate
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E6A03 | Why does a PN-junction diode not conduct current when reverse biased?
A. Only P-type semiconductor material can conduct current B. Only N-type semiconductor material can conduct current C. Holes in P-type material and electrons in the N-type material are separated by the applied voltage, widening the depletion region D. Excess holes in P-type material combine with the electrons in N-type material, converting the entire diode into an insulator
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E6A03 (C) | Why does a PN-junction diode not conduct current when reverse biased?
A. Only P-type semiconductor material can conduct current B. Only N-type semiconductor material can conduct current C. Holes in P-type material and electrons in the N-type material are separated by the applied voltage, widening the depletion region D. Excess holes in P-type material combine with the electrons in N-type material, converting the entire diode into an insulator
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E6A04 | What is the name given to an impurity atom that adds holes to a semiconductor crystal structure? A. Insulator impurity B. N-type impurity C. Acceptor impurity D. Donor impurity
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E6A04 (C) | What is the name given to an impurity atom that adds holes to a semiconductor crystal structure? A. Insulator impurity B. N-type impurity C. Acceptor impurity D. Donor impurity
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E6A05 | What is the alpha of a bipolar junction transistor?
A. The change of collector current with respect to base current B. The change of base current with respect to collector current C. The change of collector current with respect to emitter current D. The change of collector current with respect to gate current
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E6A05 (C) | What is the alpha of a bipolar junction transistor?
A. The change of collector current with respect to base current B. The change of base current with respect to collector current C. The change of collector current with respect to emitter current D. The change of collector current with respect to gate current
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E6A06 | What is the beta of a bipolar junction transistor?
A. The frequency at which the current gain is reduced to 1 B. The change in collector current with respect to base current C. The breakdown voltage of the base to collector junction D. The switching speed of the transistor
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E6A06 (B) | What is the beta of a bipolar junction transistor?
A. The frequency at which the current gain is reduced to 1 B. The change in collector current with respect to base current C. The breakdown voltage of the base to collector junction D. The switching speed of the transistor
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E6A07 | Which of the following indicates that a silicon NPN junction transistor is biased on?
A. Base-to-emitter resistance of approximately 6 to 7 ohms B. Base-to-emitter resistance of approximately 0.6 to 0.7 ohms C. Base-to-emitter voltage of approximately 6 to 7 volts D. Base-to-emitter voltage of approximately 0.6 to 0.7 volts
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E6A07 (D) | Which of the following indicates that a silicon NPN junction transistor is biased on?
A. Base-to-emitter resistance of approximately 6 to 7 ohms B. Base-to-emitter resistance of approximately 0.6 to 0.7 ohms C. Base-to-emitter voltage of approximately 6 to 7 volts D. Base-to-emitter voltage of approximately 0.6 to 0.7 volts
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E6A08 | What term indicates the frequency at which the
grounded-base current gain of a transistor has decreased to 0.7 of the gain obtainable at 1 kHz? A. Corner frequency B. Alpha rejection frequency C. Beta cutoff frequency D. Alpha cutoff frequency
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E6A08 (D) | What term indicates the frequency at which the
grounded-base current gain of a transistor has decreased to 0.7 of the gain obtainable at 1 kHz? A. Corner frequency B. Alpha rejection frequency C. Beta cutoff frequency D. Alpha cutoff frequency
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E6A09 | What is a depletion-mode FET?
A. An FET that exhibits a current flow between source and drain when no gate voltage is applied B. An FET that has no current flow between source and drain when no gate voltage is applied C. Any FET without a channel D. Any FET for which holes are the majority carriers
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E6A09 (A) | What is a depletion-mode FET?
A. An FET that exhibits a current flow between source and drain when no gate voltage is applied B. An FET that has no current flow between source and drain when no gate voltage is applied C. Any FET without a channel D. Any FET for which holes are the majority carriers
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E6A10 | In Figure E6-2, what is the schematic symbol for an N- channel dual-gate MOSFET?
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E6A10 (B) | In Figure E6-2, what is the schematic symbol for an N-channel dual-gate MOSFET?
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E6A11 | In Figure E6-2, what is the schematic symbol for a P- channel junction FET?
D. 6
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E6A11 (A) | In Figure E6-2, what is the schematic symbol for a P-channel junction FET?
D. 6
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E6A12 | Why do many MOSFET devices have internally connected Zener diodes on the gates?
A. To provide a voltage reference for the correct amount of reverse-bias gate voltage B. To protect the substrate from excessive voltages C. To keep the gate voltage within specifications and prevent the device from overheating D. To reduce the chance of the gate insulation being punctured by static discharges or excessive voltages
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E6A12 (D) | Why do many MOSFET devices have internally connected Zener diodes on the gates?
A. To provide a voltage reference for the correct amount of reverse-bias gate voltage B. To protect the substrate from excessive voltages C. To keep the gate voltage within specifications and prevent the device from overheating D. To reduce the chance of the gate insulation being punctured by static discharges or excessive voltages
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E6A13 | What do the initials CMOS stand for?
A. Common Mode Oscillating System B. Complementary Mica-Oxide Silicon C. Complementary Metal-Oxide Semiconductor D. Common Mode Organic Silicon
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E6A13 (C) | What do the initials CMOS stand for?
A. Common Mode Oscillating System B. Complementary Mica-Oxide Silicon C. Complementary Metal-Oxide Semiconductor D. Common Mode Organic Silicon
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E6A14 | How does DC input impedance at the gate of a field- effect transistor compare with the DC input impedance of a bipolar transistor? A. They are both low impedance B. An FET has low input impedance; a bipolar transistor has high input impedance C. An FET has high input impedance; a bipolar transistor has low input impedance D. They are both high impedance
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E6A14 (C) | How does DC input impedance at the gate of a
field-effect transistor compare with the DC input impedance of a bipolar transistor? A. They are both low impedance B. An FET has low input impedance; a bipolar transistor has high input impedance C. An FET has high input impedance; a bipolar transistor has low input impedance D. They are both high impedance
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E6A15 | Which semiconductor material contains excess holes in the outer shell of electrons?
A. N-type B. P-type C. Superconductor-type D. Bipolar-type
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E6A15 (B) | Which semiconductor material contains excess holes in the outer shell of electrons?
A. N-type B. P-type C. Superconductor-type D. Bipolar-type
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E6A16 | What are the majority charge carriers in N-type semiconductor material?
A. Holes B. Free electrons C. Free protons D. Free neutrons
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E6A16 (B) | What are the majority charge carriers in N-type semiconductor material?
A. Holes B. Free electrons C. Free protons D. Free neutrons
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E6A17 | What are the names of the three terminals of a field- effect transistor?
A. Gate 1, gate 2, drain B. Emitter, base, collector C. Emitter, base 1, base 2 D. Gate, drain, source
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E6A17 (D) | What are the names of the three terminals of a field-effect transistor?
A. Gate 1, gate 2, drain B. Emitter, base, collector C. Emitter, base 1, base 2 D. Gate, drain, source
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E6B E6B – Diodes
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Diodes Diodes have two terminals and conduct current in only one direction, from the anode to the cathode. By manipulating the characteristics of the semiconductor material, manufacturers can make diodes useful in a wide variety of applications. The most useful characteristic of a Zener diode is a constant voltage drop under conditions of varying current. (E6B01) This makes it useful in voltage regulator circuits. Another example is the varactor diode. The varactor diode is a semiconductor device designed for use as a voltage-controlled capacitor. (E6B04) Varactor diodes are often used in tuning circuits.
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Diodes Metal-semiconductor junction is a term that describes a type of semiconductor diode. (E6B08) A Schottky diode is an example of a metal- semiconductor diode. An important characteristic of a Schottky diode as compared to an ordinary silicon diode when used as a power supply rectifier is that it has less forward voltage drop. (E6B02) This characteristic also makes them useful in digital logic circuits. The lower forward voltage drop allows the digital ICs to switch faster. Another type of diode is the point-contact diode. A common use for point-contact diodes is as an RF detector. (E6B09
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Diodes In Figure E6-3 (below), 5 is the schematic symbol for a light-emitting diode. (E6B10)
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Diodes Forward bias is required for an LED to emit light. (E6B13)
No matter what kind of diode you are using, it’s very important to not exceed the forward current specification. Doing so, will cause it to fail. Excessive junction temperature is the failure mechanism when a junction diode fails due to excessive current. (E6B07)
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E6B01 | What is the most useful characteristic of a Zener diode?
A. A constant current drop under conditions of varying voltage B. A constant voltage drop under conditions of varying current C. A negative resistance region D. An internal capacitance that varies with the applied voltage
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E6B01 (B) | What is the most useful characteristic of a Zener diode?
A. A constant current drop under conditions of varying voltage B. A constant voltage drop under conditions of varying current C. A negative resistance region D. An internal capacitance that varies with the applied voltage
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E6B02 | What is an important characteristic of a Schottky diode as compared to an ordinary silicon diode when used as a power supply rectifier? A. Much higher reverse voltage breakdown B. Controlled reverse avalanche voltage C. Enhanced carrier retention time D. Less forward voltage drop
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E6B02 (D) | What is an important characteristic of a Schottky diode as compared to an ordinary silicon diode when used as a power supply rectifier? A. Much higher reverse voltage breakdown B. Controlled reverse avalanche voltage C. Enhanced carrier retention time D. Less forward voltage drop
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E6B03 | What special type of diode is capable of both amplification and oscillation?
A. Point contact B. Zener C. Tunnel D. Junction
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E6B03 (C) | What special type of diode is capable of both amplification and oscillation?
A. Point contact B. Zener C. Tunnel D. Junction
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E6B04 | What type of semiconductor device is designed for use as a voltage-controlled capacitor?
A. Varactor diode B. Tunnel diode C. Silicon-controlled rectifier D. Zener diode
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E6B04 (A) | What type of semiconductor device is designed for use as a voltage-controlled capacitor?
A. Varactor diode B. Tunnel diode C. Silicon-controlled rectifier D. Zener diode
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E6B05 | What characteristic of a PIN diode makes it useful as an RF switch or attenuator?
A. Extremely high reverse breakdown voltage B. Ability to dissipate large amounts of power C. Reverse bias controls its forward voltage drop D. A large region of intrinsic material
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E6B05 (D) | What characteristic of a PIN diode makes it useful as an RF switch or attenuator?
A. Extremely high reverse breakdown voltage B. Ability to dissipate large amounts of power C. Reverse bias controls its forward voltage drop D. A large region of intrinsic material
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E6B06 | Which of the following is a common use of a hot-carrier diode?
A. As balanced mixers in FM generation B. As a variable capacitance in an automatic frequency control circuit C. As a constant voltage reference in a power supply D. As a VHF/UHF mixer or detector
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E6B06 (D) | Which of the following is a common use of a hot- carrier diode?
A. As balanced mixers in FM generation B. As a variable capacitance in an automatic frequency control circuit C. As a constant voltage reference in a power supply D. As a VHF/UHF mixer or detector
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E6B07 | What is the failure mechanism when a junction diode fails due to excessive current?
A. Excessive inverse voltage B. Excessive junction temperature C. Insufficient forward voltage D. Charge carrier depletion
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E6B07 (B) | What is the failure mechanism when a junction diode fails due to excessive current?
A. Excessive inverse voltage B. Excessive junction temperature C. Insufficient forward voltage D. Charge carrier depletion
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E6B08 | Which of the following describes a type of semiconductor diode?
A. Metal-semiconductor junction B. Electrolytic rectifier C. CMOS-field effect D. Thermionic emission diode
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E6B08 (A) | Which of the following describes a type of semiconductor diode?
A. Metal-semiconductor junction B. Electrolytic rectifier C. CMOS-field effect D. Thermionic emission diode
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E6B09 | What is a common use for point contact diodes?
A. As a constant current source B. As a constant voltage source C. As an RF detector D. As a high voltage rectifier
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E6B09 (C) | What is a common use for point contact diodes?
A. As a constant current source B. As a constant voltage source C. As an RF detector D. As a high voltage rectifier
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E6B10 | In Figure E6-3, what is the schematic symbol for a light-emitting diode?
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E6B10 (B) | In Figure E6-3, what is the schematic symbol for a light-emitting diode?
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E6B11 | What is used to control the attenuation of RF signals by a PIN diode?
A. Forward DC bias current B. A sub-harmonic pump signal C. Reverse voltage larger than the RF signal D. Capacitance of an RF coupling capacitor
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E6B11 (A) | What is used to control the attenuation of RF signals by a PIN diode?
A. Forward DC bias current B. A sub-harmonic pump signal C. Reverse voltage larger than the RF signal D. Capacitance of an RF coupling capacitor
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E6B12 | What is one common use for PIN diodes?
A. As a constant current source B. As a constant voltage source C. As an RF switch D. As a high voltage rectifier
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E6B12 (C) | What is one common use for PIN diodes?
A. As a constant current source B. As a constant voltage source C. As an RF switch D. As a high voltage rectifier
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E6B13 | What type of bias is required for an LED to emit light?
A. Reverse bias B. Forward bias C. Zero bias D. Inductive bias
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E6B13 (B) | What type of bias is required for an LED to emit light?
A. Reverse bias B. Forward bias C. Zero bias D. Inductive bias
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E6C E6C – Digital ICs: Families of digital ICs; gates; Programmable Logic Devices (PLDs)
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Digital ICs Integrated circuits (ICs) are now an integral part (pun intended) of amateur radio electronics. There are several different technologies used to manufacture IC including; transistor-transistor logic, or TTL complementary metal-oxide semiconductor CMOS BiCMOS, which uses a combination of bipolar and CMOS transistors.
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CMOS CMOS is arguably the most common type of digital IC.
An advantage of CMOS logic devices over TTL devices is that have lower power consumption. (E6C05) CMOS digital integrated circuits also have high immunity to noise on the input signal or power supply because the input switching threshold is about one-half the power supply voltage. (E6C06)
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Logic Devices BiCMOS logic is an integrated circuit logic family using both bipolar and CMOS transistors. (E6C12) An advantage of BiCMOS logic is that it has the high input impedance of CMOS and the low output impedance of bipolar transistors. (E6C13) Tri-state logic devices are logic devices with 0, 1, and high impedance output states. (E6C03) These devices can be made with either TTL or CMOS technology. The primary advantage of tri-state logic is the ability to connect many device outputs to a common bus. (EC604) When a device’s outputs are in the high- impedance state, they act as if they are disconnected.
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Logic Devices In Figure E6-5, 2 is the schematic symbol for a NAND gate. (E6C08) 4 is the schematic symbol for a NOR gate. (E6C10), 5 is the schematic symbol for the NOT operation (inverter). (E6C11)
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Logic Devices When designing circuits with digital ICs, you may not use all of the inputs of the gates in that IC. To set that input to a digital 1 or 0, you might use a pull-up resistor or a pull-down resistor. A pull-up or pull-down resistor is best described as a resistor connected to the positive or negative supply line used to establish a voltage when an input or output is an open circuit. (E6C07) Pull-up resistors are also often used on the output of a digital circuit to prevent that output from floating.
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Comparator A particular type of IC is called a comparator.
Comparators compare an input voltage to a threshold voltage, and when the level of a comparator’s input signal crosses the threshold is the comparator changes its output state. (E6C02)
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Comparator Comparators have a property called hysteresis. Basically, what this amounts to is that the threshold voltage at which the comparator switches is lower when the input voltage is decreasing than the threshold voltage at which the comparator switches when the input voltage is increasing. The function of hysteresis in a comparator is to prevent input noise from causing unstable output signals. (E6C01) If the threshold voltage was the same for both increasing and decreasing input voltages, and the input voltage was right at the threshold voltage, then noise could cause that input voltage to go above and below the threshold randomly. If the comparator input did not have hysteresis, then its output would switch randomly.
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Programmable Logic Device
Many modern electronic devices now use programmable logic devices instead of cobbling together a digital circuit with a collection of ICs with simple gates. A Programmable Logic Device (PLD) is a programmable collection of logic gates and circuits in a single integrated circuit. (E6C09). Programmable logic devices can have thousands or even millions of gates in a single IC. To design digital circuits with PLDs, designers use computer-aided design software to connect and configure the logic gates.
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Programmable Logic Device
A programmable gate array is a particular type of programmable logic device. The primary advantage of using a Programmable Gate Array (PGA) in a logic circuit is that complex logic functions can be created in a single integrated circuit. (E6C14)
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E6C01 | What is the function of hysteresis in a comparator?
A. To prevent input noise from causing unstable output signals B. To allow the comparator to be used with AC input signal C. To cause the output to change states continually D. To increase the sensitivity
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E6C01 (A) | What is the function of hysteresis in a comparator?
A. To prevent input noise from causing unstable output signals B. To allow the comparator to be used with AC input signal C. To cause the output to change states continually D. To increase the sensitivity
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E6C02 | What happens when the level of a comparator's input signal crosses the threshold?
A. The IC input can be damaged B. The comparator changes its output state C. The comparator enters latch-up D. The feedback loop becomes unstable
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E6C02 (B) | What happens when the level of a comparator's input signal crosses the threshold?
A. The IC input can be damaged B. The comparator changes its output state C. The comparator enters latch-up D. The feedback loop becomes unstable
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E6C03 | What is tri-state logic?
A. Logic devices with 0, 1, and high impedance output states B. Logic devices that utilize ternary math C. Low power logic devices designed to operate at 3 volts D. Proprietary logic devices manufactured by Tri-State Devices
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E6C03 (A) | What is tri-state logic?
A. Logic devices with 0, 1, and high impedance output states B. Logic devices that utilize ternary math C. Low power logic devices designed to operate at 3 volts D. Proprietary logic devices manufactured by Tri-State Devices
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E6C04 | What is the primary advantage of tri-state logic?
A. Low power consumption B. Ability to connect many device outputs to a common bus C. High speed operation D. More efficient arithmetic operations
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E6C04 (B) | What is the primary advantage of tri-state logic?
A. Low power consumption B. Ability to connect many device outputs to a common bus C. High speed operation D. More efficient arithmetic operations
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E6C05 | What is an advantage of CMOS logic devices over TTL devices?
A. Differential output capability B. Lower distortion C. Immune to damage from static discharge D. Lower power consumption
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E6C05 (D) | What is an advantage of CMOS logic devices over TTL devices?
A. Differential output capability B. Lower distortion C. Immune to damage from static discharge D. Lower power consumption
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E6C06 | Why do CMOS digital integrated circuits have high immunity to noise on the input signal or power supply? A. Larger bypass capacitors are used in CMOS circuit design B. The input switching threshold is about two times the power supply voltage C. The input switching threshold is about one-half the power supply voltage D. Input signals are stronger
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E6C06 (C) | Why do CMOS digital integrated circuits have high immunity to noise on the input signal or power supply? A. Larger bypass capacitors are used in CMOS circuit design B. The input switching threshold is about two times the power supply voltage C. The input switching threshold is about one-half the power supply voltage D. Input signals are stronger
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E6C07 | What best describes a pull-up or pull-down resistor?
A. A resistor in a keying circuit used to reduce key clicks B. A resistor connected to the positive or negative supply line used to establish a voltage when an input or output is an open circuit C. A resistor that insures that an oscillator frequency does not drive lower over time D. A resistor connected to an op-amp output that only functions when the logic output is false
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E6C07 (B) | What best describes a pull-up or pull-down resistor?
A. A resistor in a keying circuit used to reduce key clicks B. A resistor connected to the positive or negative supply line used to establish a voltage when an input or output is an open circuit C. A resistor that insures that an oscillator frequency does not drive lower over time D. A resistor connected to an op-amp output that only functions when the logic output is false
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E6C08 | In Figure E6-5, what is the schematic symbol for a NAND gate?
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E6C08 (B) | In Figure E6-5, what is the schematic symbol for a NAND gate?
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E6C09 | What is a Programmable Logic Device (PLD)?
A. A device to control industrial equipment B. A programmable collection of logic gates and circuits in a single integrated circuit C. Programmable equipment used for testing digital logic integrated circuits D. An algorithm for simulating logic functions during circuit design
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E6C09 (B) | What is a Programmable Logic Device (PLD)?
A. A device to control industrial equipment B. A programmable collection of logic gates and circuits in a single integrated circuit C. Programmable equipment used for testing digital logic integrated circuits D. An algorithm for simulating logic functions during circuit design
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E6C10 | In Figure E6-5, what is the schematic symbol for a NOR gate?
D. 4
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E6C10 (D) | In Figure E6-5, what is the schematic symbol for a NOR gate?
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E6C11 | In Figure E6-5, what is the schematic symbol for the NOT operation (inverter)?
D. 6
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E6C11 (C) | In Figure E6-5, what is the schematic symbol for the NOT operation (inverter)?
D. 6
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E6C12 | What is BiCMOS logic?
A. A logic device with two CMOS circuits per package B. A FET logic family based on bimetallic semiconductors C. A logic family based on bismuth CMOS devices D. An integrated circuit logic family using both bipolar and CMOS transistors
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E6C12 (D) | What is BiCMOS logic?
A. A logic device with two CMOS circuits per package B. A FET logic family based on bimetallic semiconductors C. A logic family based on bismuth CMOS devices D. An integrated circuit logic family using both bipolar and CMOS transistors
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E6C13 | Which of the following is an advantage of BiCMOS logic?
A. Its simplicity results in much less expensive devices than standard CMOS B. It is totally immune to electrostatic damage C. It has the high input impedance of CMOS and the low output impedance of bipolar transistors D. All of these choices are correct
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E6C13 (C) | Which of the following is an advantage of BiCMOS logic?
A. Its simplicity results in much less expensive devices than standard CMOS B. It is totally immune to electrostatic damage C. It has the high input impedance of CMOS and the low output impedance of bipolar transistors D. All of these choices are correct
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E6C14 | What is the primary advantage of using a Programmable Gate Array (PGA) in a logic circuit?
A. Many similar gates are less expensive than a mixture of gate types B. Complex logic functions can be created in a single integrated circuit C. A PGA contains its own internal power supply D. All of these choices are correct
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E6C14 (B) | What is the primary advantage of using a Programmable Gate Array (PGA) in a logic circuit? A. Many similar gates are less expensive than a mixture of gate types B. Complex logic functions can be created in a single integrated circuit C. A PGA contains its own internal power supply D. All of these choices are correct
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E6D E6D – Toroidal and solenoidal Inductors: permeability, core material, selecting, winding; transformers; piezoelectric devices
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Solenoidal and Toroidal
Solenoidal and toroidal inductors are both used in amateur radio equipment. A solenoidal inductor is a coil of wire wound around a cylindrical core, while a toroidal inductor is a coil of wire wound around a circular or toroidal core. Solenoidal inductors often have just an air core, while toroidal inductors are wound around a ferrite or powdered-iron core. A primary advantage of using a toroidal core instead of a solenoidal core in an inductor is that toroidal cores confine most of the magnetic field within the core material. (E6D10)
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Solenoidal and Toroidal
The usable frequency range of inductors that use toroidal cores, assuming a correct selection of core material for the frequency being used, is from less than 20 Hz to approximately 300 MHz. (E6D07) Ferrite beads are commonly used as VHF and UHF parasitic suppressors at the input and output terminals of transistorized HF amplifiers. (E6D09) An important characteristic of a toroid core is its permeability. Permeability is the core material property that determines the inductance of a toroidal inductor. (E6D06)
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Solenoidal and Toroidal
One important reason for using powdered-iron toroids rather than ferrite toroids in an inductor is that powdered-iron toroids generally maintain their characteristics at higher currents. (E6D08) One reason for using ferrite toroids rather than powdered-iron toroids in an inductor is that ferrite toroids generally require fewer turns to produce a given inductance value. (E6D05)
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Solenoidal and Toroidal
To calculate the inductance of a ferrite-core toroid, we need the inductance index of the core material. The formula that we use to calculate the inductance of a ferrite-core toroid inductor is: L = AL×N2/1,000,000 Where L = inductance in microhenries AL = inductance index in µH per 1000 turns N = number of turns N = 1000 x √(L/AL)
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Solenoidal and Toroidal
Using that equation, we see that 43 turns will be required to produce a 1-mH inductor using a ferrite toroidal core that has an inductance index (A L) value of 523 millihenrys/1000 turns. (E6D11) N = 1000 x √(1/523) = 1000 x .0437 N = 43.7 turns
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Solenoidal and Toroidal
The formula for calculating the inductance of a powdered-iron core toroid inductor is: L = AL×N2/10,000 Where L = inductance in microhenries AL = inductance index in µH per 1000 turns N = number of turns N = 100 x √(L/AL)
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Solenoidal and Toroidal
Using that equation, 35 turns turns will be required to produce a 5-microhenry inductor using a powdered-iron toroidal core that has an inductance index (A L) value of 40 microhenrys/100 turns. (E6D01) N = 1000 x √(5/40) = 100 x .353 N = 35.3 turns
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Solenoidal and Toroidal
When designing circuits with ferrite-core inductors, you have to be careful not to saturate the core. The definition of saturation in a ferrite core inductor is that the ability of the inductor’s core to store magnetic energy has been exceeded. (E6D12) One problem that may occur in a circuit with inductors is self-resonance. The primary cause of inductor self-resonance is inter-turn capacitance. (E6D13) At some frequency, also called the “self- resonant frequency,” this capacitance forms a parallel resonant circuit with the inductor.
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Solenoidal and Toroidal
Variable inductors are made by inserting a slug into an air-core inductor. By varying the position of the slug, you vary the inductance. Ferrite and brass are materials commonly used as a slug core in a variable inductor. (E6D04) Brass is the type of slug material decreases inductance when inserted into a coil. (E6D14)
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Transformers A transformer consists of two inductors that are closely coupled. Connecting an AC voltage across one of the inductors, called the primary winding, causes a current to flow in the primary, which then generates a magnetic field. As the lines of this field cross the turns of the secondary winding, it induces a current to flow in the secondary, and the voltage across the secondary is equal to the voltage across the primary winding times the number of turns in the secondary winding divided by the number of turns in the primary winding. The current in the primary winding of a transformer is called the magnetizing current if no load is attached to the secondary. (E6D15)
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Transformers Transformers are often used to match the output impedance of one circuit to the input impedance of another. In this application, it’s important not to saturate the core of the transformer. The core saturation of a conventional impedance matching transformer should be avoided because harmonics and distortion could result. (E6D17)
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Transformers In some applications, a transformer’s secondary winding may be subjected to voltage spikes. In these applications, the designer may connect a capacitor to absorb the energy in that voltage spike to prevent damage to the transformer. The common name for a capacitor connected across a transformer secondary that is used to absorb transient voltage spikes is snubber capacitor. (E6D16)
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Piezoelectric devices
Piezoelectric crystals are used in several amateur radio applications. They are called piezoelectric crystals because they rely on the piezoelectric effect, which is the physical deformation of a crystal by the application of a voltage. (E6D03) The equivalent circuit of a quartz crystal is a motional capacitance, motional inductance, and loss resistance in series, all in parallel with a shunt capacitor representing electrode and stray capacitance. (E6D02)
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E6D01 | How many turns will be required to produce a 5-
microhenry inductor using a powdered-iron toroidal core that has an inductance index (A L) value of 40 microhenrys/100 turns? A. 35 turns B. 13 turns C. 79 turns D. 141 turns
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E6D01 (A) | How many turns will be required to produce a 5- microhenry inductor using a powdered-iron toroidal core that has an inductance index (A L) value of 40 microhenrys/100 turns? A. 35 turns B. 13 turns C. 79 turns D. 141 turns
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E6D02 | What is the equivalent circuit of a quartz crystal?
A. Motional capacitance, motional inductance, and loss resistance in series, all in parallel with a shunt capacitor representing electrode and stray capacitance B. Motional capacitance, motional inductance, loss resistance, and a capacitor representing electrode and stray capacitance all in parallel C. Motional capacitance, motional inductance, loss resistance, and a capacitor representing electrode and stray capacitance all in series D. Motional inductance and loss resistance in series, paralleled with motional capacitance and a capacitor representing electrode and stray capacitance
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E6D02 (A) | What is the equivalent circuit of a quartz crystal?
A. Motional capacitance, motional inductance, and loss resistance in series, all in parallel with a shunt capacitor representing electrode and stray capacitance B. Motional capacitance, motional inductance, loss resistance, and a capacitor representing electrode and stray capacitance all in parallel C. Motional capacitance, motional inductance, loss resistance, and a capacitor representing electrode and stray capacitance all in series D. Motional inductance and loss resistance in series, paralleled with motional capacitance and a capacitor representing electrode and stray capacitance
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E6D03 | Which of the following is an aspect of the piezoelectric effect?
A. Mechanical deformation of material by the application of a voltage B. Mechanical deformation of material by the application of a magnetic field C. Generation of electrical energy in the presence light D. Increased conductivity in the presence of applying light
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E6D03 (A) | Which of the following is an aspect of the piezoelectric effect?
A. Mechanical deformation of material by the application of a voltage B. Mechanical deformation of material by the application of a magnetic field C. Generation of electrical energy in the presence light D. Increased conductivity in the presence of applying light
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E6D04 | Which materials are commonly used as a slug core in a variable inductor?
A. Polystyrene and polyethylene B. Ferrite and brass C. Teflon and Delrin D. Cobalt and aluminum
141
E6D04 (B) | Which materials are commonly used as a slug core in a variable inductor?
A. Polystyrene and polyethylene B. Ferrite and brass C. Teflon and Delrin D. Cobalt and aluminum
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E6D05 | What is one reason for using ferrite cores rather than powdered-iron in an inductor?
A. Ferrite toroids generally have lower initial permeability B. Ferrite toroids generally have better temperature stability C. Ferrite toroids generally require fewer turns to produce a given inductance value D. Ferrite toroids are easier to use with surface mount technology
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E6D05 (C) | What is one reason for using ferrite cores rather than powdered-iron in an inductor?
A. Ferrite toroids generally have lower initial permeability B. Ferrite toroids generally have better temperature stability C. Ferrite toroids generally require fewer turns to produce a given inductance value D. Ferrite toroids are easier to use with surface mount technology
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E6D06 | What core material property determines the inductance of a toroidal inductor?
A. Thermal impedance B. Resistance C. Reactivity D. Permeability
145
E6D06 (D) | What core material property determines the inductance of a toroidal inductor?
A. Thermal impedance B. Resistance C. Reactivity D. Permeability
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E6D07 | What is the usable frequency range of inductors that
use toroidal cores, assuming a correct selection of core material for the frequency being used? A. From a few kHz to no more than 30 MHz B. From less than 20 Hz to approximately 300 MHz C. From approximately 10 Hz to no more than 3000 kHz D. From about 100 kHz to at least 1000 GHz
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E6D07 (B) | What is the usable frequency range of inductors that use toroidal cores, assuming a correct selection of core material for the frequency being used? A. From a few kHz to no more than 30 MHz B. From less than 20 Hz to approximately 300 MHz C. From approximately 10 Hz to no more than 3000 kHz D. From about 100 kHz to at least 1000 GHz
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E6D08 | What is one reason for using powdered-iron cores rather than ferrite cores in an inductor?
A. Powdered-iron cores generally have greater initial permeability B. Powdered-iron cores generally maintain their characteristics at higher currents C. Powdered-iron cores generally require fewer turns to produce a given inductance D. Powdered-iron cores use smaller diameter wire for the same inductance
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E6D08 (B) | What is one reason for using powdered-iron cores rather than ferrite cores in an inductor? A. Powdered-iron cores generally have greater initial permeability B. Powdered-iron cores generally maintain their characteristics at higher currents C. Powdered-iron cores generally require fewer turns to produce a given inductance D. Powdered-iron cores use smaller diameter wire for the same inductance
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E6D09 | What devices are commonly used as VHF and UHF parasitic suppressors at the input and output terminals of a transistor HF amplifier? A. Electrolytic capacitors B. Butterworth filters C. Ferrite beads D. Steel-core toroids
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E6D09 (C) | What devices are commonly used as VHF and UHF parasitic suppressors at the input and output terminals of a transistor HF amplifier? A. Electrolytic capacitors B. Butterworth filters C. Ferrite beads D. Steel-core toroids
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E6D10 | What is a primary advantage of using a toroidal core instead of a solenoidal core in an inductor? A. Toroidal cores confine most of the magnetic field within the core material B. Toroidal cores make it easier to couple the magnetic energy into other components C. Toroidal cores exhibit greater hysteresis D. Toroidal cores have lower Q characteristics
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E6D10 (A) | What is a primary advantage of using a toroidal core instead of a solenoidal core in an inductor? A. Toroidal cores confine most of the magnetic field within the core material B. Toroidal cores make it easier to couple the magnetic energy into other components C. Toroidal cores exhibit greater hysteresis D. Toroidal cores have lower Q characteristics
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E6D11 | How many turns will be required to produce a 1-mH inductor using a core that has an inductance index (A L) value of 523 millihenrys/1000 turns? A. 2 turns B. 4 turns C. 43 turns D. 229 turns
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E6D11 (C) | How many turns will be required to produce a 1- mH inductor using a core that has an inductance index (A L) value of 523 millihenrys/1000 turns? A. 2 turns B. 4 turns C. 43 turns D. 229 turns
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E6D12 | What is the definition of saturation in a ferrite core inductor?
A. The inductor windings are over coupled B. The inductor's voltage rating is exceeded causing a flashover C. The ability of the inductor's core to store magnetic energy has been exceeded D. Adjacent inductors become over-coupled
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E6D12 (C) | What is the definition of saturation in a ferrite core inductor?
A. The inductor windings are over coupled B. The inductor's voltage rating is exceeded causing a flashover C. The ability of the inductor's core to store magnetic energy has been exceeded D. Adjacent inductors become over-coupled
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E6D13 | What is the primary cause of inductor self-resonance?
A. Inter-turn capacitance B. The skin effect C. Inductive kickback D. Non-linear core hysteresis
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E6D13 (A) | What is the primary cause of inductor self- resonance?
A. Inter-turn capacitance B. The skin effect C. Inductive kickback D. Non-linear core hysteresis
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E6D14 | Which type of slug material decreases inductance when inserted into a coil?
A. Ceramic B. Brass C. Ferrite D. Powdered-iron
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E6D14 (B) | Which type of slug material decreases inductance when inserted into a coil?
A. Ceramic B. Brass C. Ferrite D. Powdered-iron
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E6D15 | What is current in the primary winding of a
transformer called if no load is attached to the secondary? A. Magnetizing current B. Direct current C. Excitation current D. Stabilizing current
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E6D15 (A) | What is current in the primary winding of a
transformer called if no load is attached to the secondary? A. Magnetizing current B. Direct current C. Excitation current D. Stabilizing current
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E6D16 | What is the common name for a capacitor connected across a transformer secondary that is used to absorb transient voltage spikes? A. Clipper capacitor B. Trimmer capacitor C. Feedback capacitor D. Snubber capacitor
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E6D16 (D) | What is the common name for a capacitor
connected across a transformer secondary that is used to absorb transient voltage spikes? A. Clipper capacitor B. Trimmer capacitor C. Feedback capacitor D. Snubber capacitor
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E6D17 | Why should core saturation of a conventional impedance matching transformer be avoided?
A. Harmonics and distortion could result B. Magnetic flux would increase with frequency C. RF susceptance would increase D. Temporary changes of the core permeability could result
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E6D17 (A) | Why should core saturation of a conventional impedance matching transformer be avoided?
A. Harmonics and distortion could result B. Magnetic flux would increase with frequency C. RF susceptance would increase D. Temporary changes of the core permeability could result
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E6E E6E Piezoelectric crystals and MMICs: quartz crystal oscillators and crystal filters); monolithic amplifiers
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Crystals (E6E01) A crystal lattice filter is a filter with narrow bandwidth and steep skirts made using quartz crystals. (E6E02) The relative frequencies of the individual crystals has the greatest effect in helping determine the bandwidth and response shape of a crystal ladder filter
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MMICs (E6E04) 50 ohms is the most common input and output impedance of circuits that use MMICs (E6E05) 2 dB is the noise figure value of a typical of a low-noise UHF preamplifier (E6E06) The characteristics of the MMIC make it a popular choice for VHF through microwave circuits are; controlled gain, low noise figure, constant input and output impedance over the specified frequency range (E6E07) Microstrip construction is typically used to construct a MMIC-based microwave amplifier
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MMICs (E6E08) Through a resistor and/or RF choke connected to the amplifier output lead is how power-supply voltage normally furnished to the most common type of monolithic microwave integrated circuit (MMIC) (E6E09) Provide the crystal with a specified parallel capacitance is what must be done to insure that a crystal oscillator provides the frequency specified by the crystal manufacturer (E6E10) Motional capacitance, motional inductance and loss resistance in series, with a shunt capacitance representing electrode and stray capacitance is the equivalent circuit of a quartz crystal
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MMICs (E6E11) Gallium nitride is the material most likely to provide the highest frequency of operation when used in MMICs (E6E12) A variable bandwidth crystal lattice filter is a "Jones filter" as used as part of a HF receiver IF stage
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E6E01 | Which of the following is true of a charge-coupled device (CCD)?
A. Its phase shift changes rapidly with frequency B. It is a CMOS analog-to-digital converter C. It samples an analog signal and passes it in stages from the input to the output D. It is used in a battery charger circuit
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E6E01 (C) | Which of the following is true of a charge-coupled device (CCD)?
A. Its phase shift changes rapidly with frequency B. It is a CMOS analog-to-digital converter C. It samples an analog signal and passes it in stages from the input to the output D. It is used in a battery charger circuit
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E6E02 | What is the following device packages is a through- hole type?
A. DIP B. PLCC C. Ball grid array D. SOT
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E6E02 (A) | What is the following device packages is a through- hole type?
A. DIP B. PLCC C. Ball grid array D. SOT
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E6E03 | Which of the following materials is likely to provide the highest frequency of operation when used in MMICs? A. Silicon B. Silicon nitride C. Silicon dioxide D. Gallium nitride
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E6E03 (D) | Which of the following materials is likely to provide the highest frequency of operation when used in MMICs? A. Silicon B. Silicon nitride C. Silicon dioxide D. Gallium nitride
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E6E04 | Which is the most common input and output impedance of circuits that use MMICs?
A. 50 ohms B. 300 ohms C. 450 ohms D. 10 ohms
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E6E04 (A) | Which is the most common input and output impedance of circuits that use MMICs?
A. 50 ohms B. 300 ohms C. 450 ohms D. 10 ohms
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E6E05 | Which of the following noise figure values is typical of a low-noise UHF preamplifier?
A. 2 dB B. -10 dB C. 44 dBm D. -20 dBm
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E6E05 (A) | Which of the following noise figure values is typical of a low-noise UHF preamplifier?
A. 2 dB B. -10 dB C. 44 dBm D. -20 dBm
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E6E06 | What characteristics of the MMIC make it a popular choice for VHF through microwave circuits? A. The ability to retrieve information from a single signal even in the presence of other strong signals B. Plate current that is controlled by a control grid C. Nearly infinite gain, very high input impedance, and very low output impedance D. Controlled gain, low noise figure, and constant input and output impedance over the specified frequency range
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E6E06 (D) | What characteristics of the MMIC make it a popular choice for VHF through microwave circuits? A. The ability to retrieve information from a single signal even in the presence of other strong signals B. Plate current that is controlled by a control grid C. Nearly infinite gain, very high input impedance, and very low output impedance D. Controlled gain, low noise figure, and constant input and output impedance over the specified frequency range
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E6E07 | Which of the following is typically used to construct a MMIC-based microwave amplifier?
A. Ground-plane construction B. Microstrip construction C. Point-to-point construction D. Wave-soldering construction
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E6E07 (B) | Which of the following is typically used to construct a MMIC-based microwave amplifier?
A. Ground-plane construction B. Microstrip construction C. Point-to-point construction D. Wave-soldering construction
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E6E08 | How is voltage from a power supply normally furnished to the most common type of monolithic microwave integrated circuit (MMIC)? A. Through a resistor and/or RF choke connected to the amplifier output lead B. MMICs require no operating bias C. Through a capacitor and RF choke connected to the amplifier input lead D. Directly to the bias voltage (VCC IN) lead
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E6E08 (A) | How is voltage from a power supply normally
furnished to the most common type of monolithic microwave integrated circuit (MMIC)? A. Through a resistor and/or RF choke connected to the amplifier output lead B. MMICs require no operating bias C. Through a capacitor and RF choke connected to the amplifier input lead D. Directly to the bias voltage (VCC IN) lead
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E6E09 | Which of the following component package types would be most suitable for use at frequencies above the HF range? A. TO-220 B. Axial lead C. Radial lead D. Surface mount
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E6E09 (D) | Which of the following component package types would be most suitable for use at frequencies above the HF range? A. TO-220 B. Axial lead C. Radial lead D. Surface mount
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E6E10 | What is the packaging technique in which leadless components are soldered directly to circuit boards? A. Direct soldering B. Virtual lead mounting C. Stripped lead D. Surface mount
192
E6E10 (D) | What is the packaging technique in which leadless components are soldered directly to circuit boards? A. Direct soldering B. Virtual lead mounting C. Stripped lead D. Surface mount
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E6E11 | What is a characteristic of DIP packaging used for integrated circuit?
A. Package mounts in a direct inverted position B. Low leakage doubly insulated package C. Two chips in each package (Dual In Package) D. A total of two rows of connecting pins placed on opposite sides of the package (Dual In-line Package)
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E6E11 (D) | What is a characteristic of DIP packaging used for integrated circuit?
A. Package mounts in a direct inverted position B. Low leakage doubly insulated package C. Two chips in each package (Dual In Package) D. A total of two rows of connecting pins placed on opposite sides of the package (Dual In-line Package)
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E6E12 | Why are high-power RF amplifier ICs and transistors sometimes mounted in ceramic packages?
A. High-voltage insulating ability B. Better dissipation of heat C. Enhanced sensitivity to light D. To provide a low-pass frequency response
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E6E12 (B) | Why are high-power RF amplifier ICs and transistors sometimes mounted in ceramic packages? A. High-voltage insulating ability B. Better dissipation of heat C. Enhanced sensitivity to light D. To provide a low-pass frequency response
197
E6F01 | What is photoconductivity?
A. The conversion of photon energy to electromotive energy B. The increased conductivity of an illuminated semiconductor C. The conversion of electromotive energy to photon energy D. The decreased conductivity of an illuminated semiconductor
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E6F E6F: Optical components: photoconductive principles and effects, photovoltaic systems, optical couplers, optical sensors, and optoisolators; LCDs
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Photovoltaic The photovoltaic effect is the conversion of light to electrical energy. (E6F04) In a photovoltaic cell, electrons absorb the energy from light falling on a photovoltaic cell. (E6F12) The electrons then become free electrons. The most common type of photovoltaic cell used for electrical power generation is silicon. (E6F10) The approximate open-circuit voltage produced by a fully-illuminated silicon photovoltaic cell is 0.5 V. (E6F11) The efficiency of a photovoltaic cell is the relative fraction of light that is converted to current. (E6F09)
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Photovoltaic Photoconductivity is a similar phenomenon. Photoconductivity is the increased conductivity of an illuminated semiconductor. (E6F01) The conductivity of a photoconductive material increases when light shines on it. (E6F02) A crystalline semiconductor is the material that is affected the most by photoconductivity. (E6F06)
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Optoisolators A device that uses the phenomenon of photoconductivity is the optoisolator. The most common configuration of an optoisolator or optocoupler is an LED and a phototransistor. (E6F03) Optoisolators are often used in conjunction with solid state circuits when switching 120 VAC because optoisolators provide a very high degree of electrical isolation between a control circuit and the circuit being switched. (E6F08)
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Optoisolators A similar device is the solid-state relay. A solid state relay is a device that uses semiconductor devices to implement the functions of an electromechanical relay. (E6F07) Optical shaft encoders are another device that rely on photoconductivity. Optical shaft encoders are used to detect when an operator turns a knob on an amateur radio transceiver. An optical shaft encoder is a device which detects rotation of a control by interrupting a light source with a patterned wheel. (E6F05)
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Liquid crystal displays
A liquid crystal display (LCD) is a display utilizing a crystalline liquid and polarizing filters which becomes opaque when voltage is applied. (E6F13) One thing that is true of LCD displays is that they may be hard to view through polarized lenses. (E6F14)
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E6F01 | What is photoconductivity?
A. The conversion of photon energy to electromotive energy B. The increased conductivity of an illuminated semiconductor C. The conversion of electromotive energy to photon energy D. The decreased conductivity of an illuminated semiconductor
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E6F01 (B) | What is photoconductivity?
A. The conversion of photon energy to electromotive energy B. The increased conductivity of an illuminated semiconductor C. The conversion of electromotive energy to photon energy D. The decreased conductivity of an illuminated semiconductor
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E6F02 | What happens to the conductivity of a photoconductive material when light shines on it?
A. It increases B. It decreases C. It stays the same D. It becomes unstable
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E6F02 (A) | What happens to the conductivity of a photoconductive material when light shines on it?
A. It increases B. It decreases C. It stays the same D. It becomes unstable
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E6F03 | What is the most common configuration of an optoisolator or optocoupler?
A. A lens and a photomultiplier B. A frequency modulated helium-neon laser C. An amplitude modulated helium-neon laser D. An LED and a phototransistor
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E6F03 (D) | What is the most common configuration of an optoisolator or optocoupler?
A. A lens and a photomultiplier B. A frequency modulated helium-neon laser C. An amplitude modulated helium-neon laser D. An LED and a phototransistor
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E6F04 | What is the photovoltaic effect?
A. The conversion of voltage to current when exposed to light B. The conversion of light to electrical energy C. The conversion of electrical energy to mechanical energy D. The tendency of a battery to discharge when used outside
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E6F04 (B) | What is the photovoltaic effect?
A. The conversion of voltage to current when exposed to light B. The conversion of light to electrical energy C. The conversion of electrical energy to mechanical energy D. The tendency of a battery to discharge when used outside
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E6F05 | Which describes an optical shaft encoder?
A. A device which detects rotation of a control by interrupting a light source with a patterned wheel B. A device which measures the strength of a beam of light using analog to digital conversion C. A digital encryption device often used to encrypt spacecraft control signals D. A device for generating RTTY signals by means of a rotating light source
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E6F05 (A) | Which describes an optical shaft encoder?
A. A device which detects rotation of a control by interrupting a light source with a patterned wheel B. A device which measures the strength of a beam of light using analog to digital conversion C. A digital encryption device often used to encrypt spacecraft control signals D. A device for generating RTTY signals by means of a rotating light source
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E6F06 | Which of these materials is affected the most by photoconductivity?
A. A crystalline semiconductor B. An ordinary metal C. A heavy metal D. A liquid semiconductor
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E6F06 (A) | Which of these materials is affected the most by photoconductivity?
A. A crystalline semiconductor B. An ordinary metal C. A heavy metal D. A liquid semiconductor
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E6F07 | What is a solid state relay?
A. A relay using transistors to drive the relay coil B. A device that uses semiconductors to implement the functions of an electromechanical relay C. A mechanical relay that latches in the on or off state each time it is pulsed D. A passive delay line
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E6F07 (B) | What is a solid state relay?
A. A relay using transistors to drive the relay coil B. A device that uses semiconductors to implement the functions of an electromechanical relay C. A mechanical relay that latches in the on or off state each time it is pulsed D. A passive delay line
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E6F08 | Why are optoisolators often used in conjunction with solid state circuits when switching 120VAC? A. Optoisolators provide a low impedance link between a control circuit and a power circuit B. Optoisolators provide impedance matching between the control circuit and power circuit C. Optoisolators provide a very high degree of electrical isolation between a control circuit and the circuit being switched D. Optoisolators eliminate the effects of reflected light in the control circuit
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E6F08 (C) | Why are optoisolators often used in conjunction with solid state circuits when switching 120VAC? A. Optoisolators provide a low impedance link between a control circuit and a power circuit B. Optoisolators provide impedance matching between the control circuit and power circuit C. Optoisolators provide a very high degree of electrical isolation between a control circuit and the circuit being switched D. Optoisolators eliminate the effects of reflected light in the control circuit
220
E6F09 | What is the efficiency of a photovoltaic cell?
A. The output RF power divided by the input DC power B. The effective payback period C. The open-circuit voltage divided by the short-circuit current under full illumination D. The relative fraction of light that is converted to current
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E6F09 (D) | What is the efficiency of a photovoltaic cell?
A. The output RF power divided by the input DC power B. The effective payback period C. The open-circuit voltage divided by the short-circuit current under full illumination D. The relative fraction of light that is converted to current
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E6F10 | What is the most common type of photovoltaic cell used for electrical power generation?
A. Selenium B. Silicon C. Cadmium Sulfide D. Copper oxide
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E6F10 (B) | What is the most common type of photovoltaic cell used for electrical power generation?
A. Selenium B. Silicon C. Cadmium Sulfide D. Copper oxide
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E6F11 | What is the approximate open-circuit voltage produced by a fully-illuminated silicon photovoltaic cell? A. 0.1 V B. 0.5 V C. 1.5 V D. 12 V
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E6F11 (B) | What is the approximate open-circuit voltage produced by a fully-illuminated silicon photovoltaic cell? A. 0.1 V B. 0.5 V C. 1.5 V D. 12 V
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E6F12 | What absorbs the energy from light falling on a photovoltaic cell?
A. Protons B. Photons C. Electrons D. Holes
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E6F12 (C) | What absorbs the energy from light falling on a photovoltaic cell?
A. Protons B. Photons C. Electrons D. Holes
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E6F13 | What is a liquid crystal display (LCD)?
A. A modern replacement for a quartz crystal oscillator which displays its fundamental frequency B. A display utilizing a crystalline liquid and polarizing filters which becomes opaque when voltage is applied C. A frequency-determining unit for a transmitter or receiver D. A display that uses a glowing liquid to remain brightly lit in dim light
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E6F13 (B) | What is a liquid crystal display (LCD)?
A. A modern replacement for a quartz crystal oscillator which displays its fundamental frequency B. A display utilizing a crystalline liquid and polarizing filters which becomes opaque when voltage is applied C. A frequency-determining unit for a transmitter or receiver D. A display that uses a glowing liquid to remain brightly lit in dim light
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E6F14 | Which of the following is true of LCD displays?
A. They are hard to view in high ambient light conditions B. They may be hard view through polarized lenses C. They only display alphanumeric symbols D. All of these choices are correct
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E6F14 (B) | Which of the following is true of LCD displays?
A. They are hard to view in high ambient light conditions B. They may be hard view through polarized lenses C. They only display alphanumeric symbols D. All of these choices are correct
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Resources http://arrlexamreview.appspot.com/ Review by Subelement
Gives you the correct answer as you go. I like it the best!!! Is like taking the test for real. Gives you the most information, Sub-elements and percent %.
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