1. Interface Engineering
Film Formation
Perovskite
Electrode
Hole transport layer
Glass
Electron transport layer
TCO
Generation
Defects Passivation
Transport
Interface Engineering
Collection

2. Formation: Vapor Assist Solution Process
CH3NH3PbI3: PbI2(inorganic) + CH3NH3I(organic)
(a)
(b)
(c)
(d)
PbI2
Film quality:
Enhanced conformity
Full surface coverage
High crystallinity
Large grain size
CH3NH3PbI3

3. PbI2 Passivation & Reduced recombination
Page 17 – 20 all under the same title? Why? Title should be the central focus of the slide, not a routine thing.
Q, Chen, H. P. Zhou, Y. Yang et. al., Nano Lett.,2014, 14, 4158.

4. Enhance Performance: interface engineering
Connecting all the dots, we further improve the efficiency.
Combined optimization of the entire carrier pathway has led to a device PCE of 19.3% under AM1.5 illumination without anti-reflective coating; the VOC, JSC and FF are 1.13 V, mA/cm2, and 75.01%, respectively (Fig. 3). In general, the devices exhibit VOC = 1.04−1.15 V, JSC = 18.16−22.8 mA/cm2, FF = 66.9−76.3%, and the resulting PCE = 14.5−19.3 %. The average device efficiency is over 16.6%, which shows the good reproducibility of the approach.
H. P. Zhou, Q, Chen, Y. Yang et. al., Science, 2014, 345, 542.