1. Semiconductor nanoheterostructures in nonequilibrium conditions: glance through scanning probe microscope K.S. Ladutenko (SPbGPU) scientific advisers V.P. Evtikhiev and A.V. Ankudinov Ioffe Institute

2. Plan of the report: The construction of atomic force microscope Several techniques My research of nanoheterostructures in nonequilibrium conditions

3. The construction of atomic force microscope Probe Probe-sample interaction detection system Coarse positioning system Fine positioning system (piezoelectric tube) Feedback loop Vibration isolation system

4. The outward appearance our microscope Smena NT-MDT

5. Coarse positioning system Arm reducer. Springing reducer Piezo stepper motor Stepper electric motor

6. Piezoceramic scanner

7. Piezoceramics drawbacks 1.Nonlinearity 2.Creep 3.Hysteresis 1 23

8. Probe

9. Van der Waals interaction

10. Probe-sample interaction detection system

11. FzFzFzFz FLFLFLFL

12. Feedback loop

13. Vibration isolation system

14. Acoustic noises

15. Measuring techniques contact techniques –constant force technique –constant height technique –lateral force technique Semicontact –constant amplitude technique –Kelvin probe technique

16. Constant force technique

17. Constant height technique

18. Lateral force technique

19. GaSb with five quantum wells GaInSbAs GaInSbAs(5nm)/GaSb(25nm) QW

20. Constant amplitude technique

21. Kelvin probe technique

22. List of techniques STM techniques Constant Current mode Constant Height mode Barrier Height imaging Density of States imaging I(z) Spectroscopy I(V) Spectroscopy AFM techniques dc Contact techniques Constant Height mode Constant Force mode Contact Error mode Lateral Force Imaging Spreading Resistance Imaging ac Contact techniques Force Modulation mode Contact EFM AFAM AFAM Resonance Spectroscopy Piezoresponce Force Microscopy Semicontact techniques Semicontact mode Phase Imaging mode Semicontact Error mode Non-Contact techniques Non-Contact mode Frequency Modulation mode Many-pass techniques EFM Scanning Capacitance Microscopy Kelvin Probe Microscopy DC MFM AC MFM Dissipation Force Microscopy Spectroscopies Force-distance curves Adhesion Force imaging Amplitude-distance curves Phase-distance curves Frequency-distance curves Full-resonance Spectroscopy SNOM techniques Shear Force Microscopy Transmission mode Reflection mode Luminescence mode SNOM Lithography aSNOM techniques Scanning Plasmon Near-field Microscopy Lithographies AFM Oxidation Lithography STM Lithography AFM Lithography - Scratching AFM Lithography - Dynamic Plowing Confocal Microscopy techniques Laser mode Image mode Spectral mode Confocal Volume Lithography

23. Semiconductor nanoheterostructure in nonequlibrium conditions The motivation : need to improve the characteristics of injection lasers Method : Kelvin probe technique Modernization of this method Results Conclusions

24. Motivation NP h

25. pin Technique to measure the leakage currants h

26. Measurement

27. CPD dependence from pumping currant Voltage, V X, nm

28. Impulse power supply

29. pin Technique to measure the leakage currants

30. CPD dependence from pumping currant Voltage, V Currant, A

31. Results The proposed and realized measurement procedure under pulse laser power supply allowed taking measurements at currents flowing through lasers is much higher than threshold current A change in contact potential difference is recorded far from pn-transition, in a strongly alloyed substrate depending on currents flowing through lasers

32. Conclusion The attained results allow presuming that the proposed EFM procedure under pulse diode pumping enables to access the contribution of different physical processes to the leakage current of laser diode operating within a broad range of pumping currents.