1. Herb's Electron Devices

2. Herb's Electron Devices: Herb's Bipolar Transistor
670 GHz amplifier
300 GHz PLL
614 GHz VCO
204 GHz digital logic ?
...plenty of steam left...

3. Herb's Electron Devices: nanometers & 6.1 angstrom
What will the ultimate (4nm ???) FET look like ?
At 4 nm gate length,
the quantum well had better be < 2 nm thick.
...If III-V, it probably will have an InAs channel
How do wells work at this thickness ?
Brar, Kroemer, Ibbetson, English APL, June 1993
...but Sakaki says: "terrible mobility"
...and Solomon says: "not enough charge".
Perhaps anisotropic (L-X-D) valleys
give more charge and mobility ?
Perhaps quantum confinement in D-valleys (Si), lets an indirect-gap material emit light ?
Herb had lots to say, about this.
...seems like a good idea...
...well, indeed it was !
...and gave tremendous guidance.
Brar, Kroemer, English. Journal Crystal Growth 1993