1. Tunable magnetoresistance in atomically thin WTe2
Enze Zhang, Rui Chen, Ce Huang, Jihai Yu, Kaitai Zhang,Weiyi Wang,Shanshan Liu, Jiwei Ling, Xiangang Wan, Hai-Zhou Lu and Faxian Xiu*
State Key Laboratory of Surface Physics and Department of Physics, Fudan University,
Shanghai , China.
Ⅱ. Magnetoresistance in thick and thin WTe2
Ⅰ. Material Synthesis and Characterization
Ⅲ. Tunable ambipolar resistance and magnetoresistance in WTe2
Ⅳ. Summary
We demonstrated the CVD growth of atomically thin high quality WTe2. Based on which the fabricated four-terminal field-effect transistor (FET) devices exhibits an ambipolar gate dependent conductance at low temperatures. More importantly, a systematic crossover from weak antilocalization (WAL) to weak localization (WL) is witnessed in few-layer WTe2. All these properties clearly identify WTe2 as a promising platform for exotic electronic and spintronic device applications.
Nano Letters, 17 (2), 878–885, (2017).
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