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Recent studies on BEPCII longitudinal impedance

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Presentation on theme: "Recent studies on BEPCII longitudinal impedance"— Presentation transcript:

1 Recent studies on BEPCII longitudinal impedance
Na Wang, Qing Qin, Wen Kang Institute of High Energy Physics, Beijing, China

2 Introduction on BEPCII
BEPCII — Beijing Electron Positron Collider Upgrade — Serves for high energy physics experiments and synchrotron radiation applications — Multi-bunch collision with double rings Linac BESIII Spectrometer Accumulator 储存环

3 Main parameters achieved in this run (collision mode)
Design Achieved BER BPR Energy (GeV) 1.89 Beam curr. (mA) 910 ~800 Bunch curr. (mA) 9.8 ~9.0 Bunch number 93 80 – 88 RF voltage 1.5 1.5 – 1.7 Circumference 240 y* (m) 0.015 0.014 – 0.015 Lifetime (hrs) B – B parameter 0.04 0.0327 Lum. (1032cm-2s-1) 10 6.49 Progresses are needed to achieve higher beam current and higher luminosity!

4 Hardware failure during this HEP run
Downstream injection kicker

5 What brings the damages?
Low uniformity of the coating (metallic mixture) Beam or photon hitting on the plate Power loss heating due to the impedance (less impossible as the upstream kickers work fine) What can we do about it? Change coating material Use metal slot instead of ceramic Beam orbit optimization The impedance of different kicker structures are calculated and compared

6 Impedance calculation with MAIFA code
Simulation model Longitudinal wake obtained by MAFIA time domain solver 7mm gap

7 Longitudinal Impedance
f, GHz Im Z// ,  Re Z// ,  f, GHz 3.7 GHz L = 11 nH kloss = V/pC P = 177 W (nb=93,Ib=9.8mA) 7 mm gap in current bus

8 Optimization of the shielding structure
Ceramic with metal coating, w=34mm Slotted pipe Multi-slots w=15mm w=10mm 6mm×5 10mm×3 kloss (V/pC) 0.025 0.041 0.059 0.019 0.022 P (W) nb=93, Ib=9.8mA 177 290 418 134 156 L (nH) 11 25 39 4 6 The structure is chosen to compromise between high field uniformity and low beam impedance.

9 Impedance spectrum one slot 10mm multi slots 10mm3 Re Z// , 
Im Z// ,  one slot 10mm f, GHz f, GHz multi slots 10mm3

10 Problems due to the gap in the slots
Multi-slots 10mm3 In order to keep high uniformity, small gaps of 1~2mm wide in the side slots are needed. L = 38 nH kloss = V/pC P = 304 W (nb=93,Ib=9.8mA)

11 Discussions & summary The reasons for the kicker damage are not quite clear, and further studies need to be done to avoid more damages. The multi-slot structure shows lower impedance and are less vulnerable to incident beam, and it might be used to replace the ceramic structure in the future. It seems that we can’t benefit much from the multi-slot structure if there is gaps in the side slots.

12 Thanks for your attention!


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