1. Chapter 3, Current in Homogeneous Semiconductors
Carrier Motion
Current Flow
Drift
Diffusion
Recombination/Generation
Continuity Equations
Use of Continuity Equations

13. Notation Reminder
no, po: equilibrium
n, p: general carrier concentrations

18. Reference: Pierret, Section 5.2

21. Electrons added to condution band. Electrons removed.
Holes removed.
Holes added to valence band. 3

24. From nT/NT no

30. Note: R corresponds to generation here!!

31. Reference: Pierret, Section 5.3.

33. Depend on details of situation.
Equilibrium
Excess carriers
Gop is from light shining on the semiconductor
Normal recombination.
Depend on details of situation.

37. For normal, low-level injection, p<<ND

38. For direct bandgap semiconductors, R=βnp for direct band to band recombination.

40. Minority carrier diffusion length for holes.