> Teaching > EMC of ICs

www.etienne-sicard.fr > Teaching > EMC of ICs
Electromagnetic compatibility of Integrated Circuits Etienne SICARD INSA/DGEI University of Toulouse 31077 Toulouse - France Alexandre BOYER INSA/DGEI – LAAS-CNRS University of Toulouse 31077 Toulouse - France Sept , 2017 > Teaching > EMC of ICs November 18

Objectives Understand parasitic emission mechanisms
Introduce parasitic emission reduction strategies Give an overview of emission and susceptibility measurement standards Power Decoupling Network modelling Basis of conducted and radiated emission modelling Basis of immunity modelling Hands-on experience in IC emission and immunity measurements November 18

Agenda Date Morning Afternoon Day 1, Sept 18
Welcome Overview, Basic concepts (E. Sicard) Illustration of basic concepts using IC-EMC Day 2, Sept 19 Measurement methods (A. Boyer) Group 1: lab – emission measurement methods Group 2: simulation of emission measurement methods Day 3, Sept 20 Modelling EMC of ICs ( E. Sicard) Group 2: lab – emission measurement methods Group 1: simulation of emission measurement methods Day 4, Sept 21 EMC guidelines (E. Sicard) Group 1: lab – immunity measurement methods Group 2: simulation of immunity Day 5, Sept 22 Group 2: lab – immunity measurement methods Group 1: simulation of immunity EMC of 3D-Ics (E. Sicard) Case study Evaluation November 18

Near-field simulation
Illustration with IC-EMC IC-EMC - A TOOL FOR EMC PREDICTION AT IC LEVEL Spectrum analysis Impedance simulation Near-field simulation Immunity simulation IBIS interface Key tools Smith Chart A schematic editor An interface to WinSpice A post-processor to compare simulated with measured spectrum An Electromagnetic solver for radiated field Freeware, online 250 pp documentation, 15 case studies November 18

References Books Freeware Workshops Standards www.iec.ch
Nov. 2019 Standards IEC 61967, 2001, Integrated Circuits Emissions IEC 62132, 2003, Integrated circuits Immunity IEC 62433, 2008, Integrated Circuit Model November 18

1. EMC of ICs An overview

Outlines Electronic Market Growth Electromagnetic interference
What is EMC Technology scale down Going 3D Origin of parasitic emission Trends towards higher emission Origin on susceptibility Emission issues Susceptibility issues EMC issues Conclusion November 18

Electronic Market Growth
Individuals 30% Companies PC at home Internet GSM MP3 DVD Flat screens Automotive HDTV 3G 4G IoT ADAS Society 20% PC in companies Audio CD Defense Local Energy Security Medical 4% 2017 10% Recession Bank crash 3% 2016 Recession -10% Telecom crash 83 86 89 92 95 98 01 04 07 10 13 16 19 Year Adapted from Electronique International Mai 21, 2009

Electronic Market Growth
Vision 2020 Increasing disposable income, expanding urban population, growing internet penetration and availability of strong distribution network Share of system sales 2020 vs 2015 Smartphones PC TV Automotive Tablets Internet of Things Game consoles Medical Servers -10% 10% 20% Growth November 18

Electromagnetic Interference
EMI ISSUES IN WIRELESS DEVICES Numerous interference cases reported over the ISM band 2400 – MHz. From Cisco, « 20 Myths of WiFi Interference », White Paper, 2008: “Interference contributes to 50 % of the problems on the customer’s Wi-Fi network. “ “In a recent survey of 300 of their customers, a major Wi-Fi tools provider reported that “troubleshooting interference won ‘top honors’ as the biggest challenge in managing a Wi-Fi network.”” “67 percent of all residential Wi-Fi problems are linked to interfering devices, such as cordless phones, baby monitors, and microwave ovens.” “At 8m, a microwave oven degrades data throughput by 64%.”

EMI ISSUES IN MEDICAL DEVICES Interference Technology – June 2015 “Pacemakers can mistakenly detect electromagnetic interference (EMI) from smartphones as a cardiac signal, causing them to briefly stop working. This leads to a pause in the cardiac rhythm of the pacing dependent patient and may result in syncope.” Dr. Lennerz “For implantable cardioverter defibrillators (ICDs) the external signal mimics a life threatening ventricular tachyarrhythmia, leading the ICD to deliver a painful shock” Dr. Lennerz November 18

EMI ISSUES IN MEDICAL DEVICES Interference Technology – March 2014 Electromagnetic radiation from portable suction devices could interfere with some defibrillators, rendering them inoperable in a medical emergency. Philips HeartStart MRx defibrillators are known to fail without warning during battery power operation if subjected to high electromagnetic interference (EMI). Laerdal LSU 4000 portable suction units emitted EMI with field strengths up to 180 V/m, put the defibrillators at risk for malfunction.

EMI ISSUES IN AUTOMOTIVE In Compliance, 2015

EMI ISSUES IN AUTOMOTIVE ADAS - Advanced Driver Assistance Systems Autonomous driving in 2030 Much more sensors, cameras, embedded calculators & security

Interference Technology – January 2013
Electromagnetic Interference EMI ISSUES IN AVIATION Interference Technology – January 2013 FAA said Wi-Fi systems may interfere with the Honeywell phase 3 display units aboard 157 Boeing airplanes in use by various U.S. airlines. These display units are critical for flight safety, providing crewmembers with information such as airspeed, altitude, heading, and pitch and roll [..] the issue was discovered two years ago during testing to certify a Wi-Fi system for use on Boeing 737 Next Generation.

What is EMC ? DEFINITION « The ability of a component, equipment or system to operate satisfyingly in a given electromagnetic environment, without introducing any harmful electromagnetic disturbances to all systems placed in this environment. » Essential constraint to ensure functional safety of electronic or electrical applications Guarantee the simultaneous operation of every electrical or electronic equipment in a given electromagnetic environment Reduce both the parasitic electromagnetic emission and the sensitivity or susceptibility to electromagnetic interferences.

What is EMC? ZOOM AT DEVICES 10 mm 100 mm November 18

1 V 100 µA Integrated Circuits… 10µm 1mm 100 nm 1 µm © Intel Xeon
November 18

What is EMC? WHY EMC OF IC ? Until mid 90’s, IC designers had no consideration about EMC problems in their design.. Starting 1996, automotive customers started to select ICs on EMC criteria Starting 2005, mobile industry required EMC in System in package Massive 3D integration will require careful EMC design November 18

Crypto, sensor, position processor
Technology scale down 5nm 150 G 2020 ? 5G Technology 130nm 90nm 45nm 28nm 14nm 2016 4G+ Octa Core Multi DSP 3D 4K Image Proc Crypto, sensor, position processor Agregated RF 2 Gb Memories 15G Complexity 250M 500M 2G 7G Packaging Mobile generation 3G 3G+ 4G 2004 2007 2010 2013 Core DSPs 10 Mb Mem Dual core Dual DSP RF Graphic Process. 100 Mb Mem Sensors Quad Core Quad DSP 3D Image Proc Crypto processor Reconf FPGA, Multi RF 1 Gb Memories Multi-sensors Embedded blocks

Technology scale down TOWARDS 100 GIGA DEVICES 100,000,000,000
8-core µP = 2 GT Dual core µP+ cache = 100MT 32 bit µP :1MT 16 bit µP = 100 KT 8bit µP : 10 KT 2020

Technology scale down MB FET MOSFET FINFET 100 mm2 Logic Memory IO
Drastic reduction of the silicon area MB FET MOSFET FINFET 100 mm2 Logic Memory IO 50 mm2 19 mm2 Logic Memory IO 10 mm2 Logic Memory IO 5 mm2 Logic Memory IO 3 mm2 1,2 mm2 Logic Memory IO Logic Memory IO Logic Memory IO 45 nm 32 nm 20 nm 14 nm 10 nm 7 nm 5 nm Adapted from Mistry, K. (2017). 10 nm technology leadership, Technology and Manufacturing Day, Intel

Technology scale down INCREASED COMPLEXITY
1st year of produc. External Supply (V) Internal supply (V) Max. Current (A) Gate density (K/mm2) SRAM area (µm2) Gate current (mA) Gate capa (fF) Typ gate delay (ps) 0.8 µm 1990 5 <1 15 80.0 0.9 40 180 0.5 µm 1993 3 28 40.0 0.75 30 130 0.35 µm 1995 3.3 12 50 20.0 0.6 25 100 0.25 µm 1997 2.5 90 10.0 0.4 20 75 0.18 µm 1999 1.8 160 5.0 0.3 0.12 µm 2001 1.2 150 240 2.4 0.2 10 35 90 nm 2004 1.0 186 480 1.4 0.1 7 65 nm 2006 236 900 0.07 22 45 nm 2008 283 2 000 0.35 0.05 18 32 nm 2010 290 3 500 0.20 0.04 14 28 nm 2012 1.5 300 4 800 0.15 0.03 2 20 nm 2014 0.8 8 000 0.10 0.02 8 14 nm 2016 350 15 000 0.015 6 10 nm 2018 30 000 0.011 4 7 nm 2020 0.5 50 000 0.008 Adapted from M. Ramdani E. Sicard, “The Electromagnetic Compatibility of Integrated Circuits—Past, Present, and Future”, IEEE Trans. EMC, VOL. 51, N. 1, Feb. 2009 November 18

Technology scale down 65nm 28nm 14nm -50% -80% 65nm 28nm 14nm
Scale down benefits .. … 65nm 28nm 14nm -50% -80% 65nm 28nm 14nm

Technology scale down FINFET MOSFET MBFET MOS Current drive (mA/µm)
FinFET for increasing drive current and reducing leakage Multi-bridge FET MOS Current drive (mA/µm) High K Metal Gate to increase field effect Strain to increase mobility High performance 2.5 FINFET 2.0 General Purpose MOSFET 1.5 Low power Ioff: 100nA/µm 1.0 10nA MBFET 1 nA 0.5 0.0 130 45 65 90 10 20 32 14 7 5 3 Technology node (nm) Intrinsic perf. Gate material Strain

Technology scale down 14-nm Xeon by Intel ™
IBM, GlobalFoundries, Samsung, SUNY first 7-nm testchip 2017 Qualcom Snapdragon 635 in 10-nm Si lattice: ___ nm

Technology scale down TECHNOLOGY INNOVATION & COST Strain, eSiGe,
High-K, low-K dielectric, Airgap Metal gate FinFET/ Gate-All-Around FET Double, quad patterning

Technology scale down IMPORTANCE OF MEMORY 50% 20% 55% 35%

Going 3D Stacked process layers 8, 16, 32 layers of active devices
1 tera-bit/cm2 achieved 5 years ahead from roadmaps

Going 3D Package-on-package (PoP) Upper MEM MEM to SoC (TMV) PCB PCB
SoC to PCB MEM to SoC (TMV) MEM to PCB (TMV) PCB PCB Bottom SoC E. Sicard, EMC performance analysis of a Processor/Memory System using PCB and Package-On-Package, EMC Compo 2015 Edinburgh

Data Rate per pin (Gb/s)
Going 3D I/O Technology Multi-Giga-Bit link between processors & memories : video, object recogn., 3D capture Generation 4x and 5 on the market Generation 6 under development DDR4x: 230 ps, 0.25 V swing Data Rate per pin (Gb/s) 100 Gb/s Graphics trends GDDR6 GDDR5 Low power trends GDDR4 10 Gb/s GDDR3 LP5 LP4x GDDR2 LP4 LP3 LP2 DDR5 DDR4x DDR4 DDR trends DDR2 DDR3 1 Gb/s 2010 2012 2014 2016 2018 2020

Going 3D Processor die THERE IS PLENTY OF SPACE ON THE TOP
3D technology uses stacked dies, through-silicon-vias Enables Gb/s/pin at 1.0V Samsung 3D (Galaxy 6) vs PoP (Galaxy 5) : 30% faster 20% less power Less heat Thinned memory die 10 µm Multicore 350 µm thickness Direct bond interconnect (DBI) Package leadframe (GND) Through Silicon Via (TSV) Possible 3rd die Bottom die Upper die

EMC at IC Level SUSCEPTIBILITY EMISSION Personal Devices Equipment
Safety systems interferences Carbon airplane Equipment Boards Susceptibility to radio frequency interference is illustrate in the case of a very high radar wave illuminating an airplane. This situation is very common at the proximity of airports. A Giga-watt pulse is received by the the plane, which captures some energy which may flow to the equipment, the board and finally to the component. On the other hand, the parasitic emission due to the integrated circuit inside a car may jeopardize the correct behavior of personal devices such as mobile phones, and RF links. In some case, the parasitic energy may be high enough to parasite the safety systems of the car. Radar Components Hardware fault Software failure Function Loss

Origin of Parasitic Emission
BASIC MECHANISMS FOR CURRENT SWITCHING VDD Switching current IDD Vin Voltage Time Output capa VSS ISS Time One of the major source of perturbation is the current flowing inside each elementary gate of the integrated circuit. Let us consider the CMOS inverter, supplied by a high voltage VDD (2V in 0.18µm) and ground VSS (0V). When the input falls to 0 (i.e logic level “0”), a current (around 0.5mA) charges the capacitance through the pull up device. When the input rises to 2V, that is a logic level “1”, a similar current flows through the pull down device and discharges the capacitance. CMOS inverter exemple Question: waveform, amplitude? November 18

CMOS INVERTER IN IC-EMC Waveforms strongly depend on load Switching current Voltage Time Time Basic > interconnects > GateSwitching.sch November 18

STRONGER SWITCHING CURRENT: i(t) Time 50ps i(t) Time Vdd i(t) Vss Internal switching current Switching gates Very large Simultaneous Switching Current Main transient current sources: Clock-driven blocks, synchronized logic Memory read/write/refresh I/O switching November 18

EXAMPLE: EVALUATION OF SWITCHING CURRENT ____ VDD, ___ technology ____ mA / gate in ____ ps ____ % is gate ____ gates in ____ Bit Micro => ____ A ____ % switching activity => ____ A ____ % current peak spread (non synchronous switching) ____ in ____ ps ____ Current (A) ____ ns time Vdd Vss i(t) Current / gate Current (A) ____ ns time Current / Ic ____ 0.1 ma/gate in 100 ps, 10 million (base band), 10 K(8bits), 100K (16 bits), 1M (32 bits). % switching activity = 10 %, /10 because spread current = 1 A peak sur 1 ns. 16 bits : 100 mA sur 1 ns, 32 bits = 1A 500 ps… November 18

Wires act as antennas V(t) Time Vss Vdd November 18

WIRES+CURRENT = NOISE DSPIC33F noise measurement with active probe on X10 Activation of the core by a 40 MHz internal PLL Synchronous ADDR0..15 bus switching 0x0000, 0xFFFF DSPIC_VDD_VofT.tran November 18

WIRES RADIATE November 18

Increase parasitic noise
Emission Issues WHY TECHNOLOGY SCALE DOWN MAKES THINGS WORSE ? Time New process Volt Old process Current level keeps almost constant but: Faster current switching Stronger di/dt Increase parasitic noise Current di/dt Old process Reduc Voltage swing => less E field With the technology scale down, the supply voltage is reduced and the signals switch faster within interconnects (From voltage to scaled voltage). In 0.18µm technology, the switching is about 100ps (Pico-second or second), with a 2V swing. Concerning currents, the amplitude of elementary peaks appearing on supply lines of each elementary gates are sharper, but their amplitude remains constant (0.5mA in 100ps, per gate). Consequently, stronger di/dt are observed, leading to increased emission problems. New process Time November 18

Susceptibility Issues
DECREASED NOISE MARGIN IN ICS 3.3 V inside, 5V outside ____ noise margin Supply (V) 5.0 1V inside, 1.2V outside ____ noise margin 3.3 I/O supply 2.5 Core supply 1.8 1.2 Tension cœur: réduire la puissance consommée, fragilité des oxyde Tension I/O: reduction => aller + vite de 0 à VDD, mais – rapide pour des raison de compatibilité entre techno 1.0 0.35µ 0.18µ 130n 90n 65n 45n 32n 20n 14n 10n 7n Technology November 18

UNINTENTIONAL ELECTROMAGNETIC SOURCES
Susceptibility Issues UNINTENTIONAL ELECTROMAGNETIC SOURCES Power HF VHF UHF SHF xHF THF 1GW Weather Radar Radars Fields radiated by electronic devices Continuous waves & pulsed waves 1MW Thunderstorm impact TV UHF 1KW TV VHF 2-4G BS 1W 4G 2G 3G 1mW Frequency 3 MHz 30 MHz 300 MHz 3 GHz 30 GHz 300 GHz 25m 25mm 0.25m 2.5mm 2.5m /4 (ideal antenna) 0.25mm

Susceptibility Issues
SYSTEM-ON-CHIP, 3D STACKING: DANGER EMC Level (dB) Susceptibility level 50 High risk of interference 40 30 Safe interference margin 20 Unsafe margin 10 -10 -20 Sum of perturbations -30 -40 1 10 100 1000 Frequency (MHz) November 18

EMC Issues 1 GHz 2 GHz 3 GHz 10 GHz 20 GHz 30 GHz 40 GHz
TOWARDS HIGHER FREQUENCIES 2,3,4,5G mobile frequencies 4G 800 2-3G 900 2-4G 1800 3G 1900 4G 2600 Today 5G 700 1 GHz 2 GHz 3 GHz Tomorrow 5G 3300 5G 4400 5G 26 250 5G 42 500 10 GHz 20 GHz 30 GHz 40 GHz

Parasitic Emission (dB) IC technology scale down
EMC Issues EMC at IC level usually characterized up to 5 GHz Requests at 6 GHz for communicating cars 5G will start at GHz Automatic drive : up to 80 GHz 20 40 60 80 100 10 MHz 100 MHz 1 GHz Parasitic Emission (dB) 10 GHz 100 GHz IC Parasitic Emission Customer pressure Customer Concerns in 5 years IC technology scale down 10 years

Technology Nano-CMOS operates below 1V, noise margin around 50 mV
Close to medium voltage (12, 24, 48 V) and high voltage (98, 240, 300, 400, 850 V) functions ADC with bit resolution work at µV resolution

Conclusion EMI reported in all kinds of devices
IC involved in many EMI problems IC technology evolution towards higher complexity On-chip switching currents in the A range ICs are good antennas in the GHz range Increased switching noise Increased emission issues Reduced noise margins System-on-chips, systems-in-package rise new EMC issues November 18

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