Presentation is loading. Please wait.

Presentation is loading. Please wait.

Steven DenBaars Materials and ECE Departments

Published byJasper Glenn Modified over 5 years ago

Similar presentations

Presentation on theme: "Steven DenBaars Materials and ECE Departments"— Presentation transcript:

1 Tribute to Prof Larry Coldren for all the great collaborations with the MOCVD Lab
Steven DenBaars Materials and ECE Departments Solid State Lighting and Energy Electronics Center University of California, Santa Barbara

2 Thanks for my 1st MOCVD System
Optoelectronic Technology Center-1991 Prof. Larry Coldren and John Bowers PIs hire DenBaars as Assistant Prof. and help purchase 1st UCSB MOCVD system Thanks for my 1st MOCVD System Lasted 15 years & 500 papers!

3 Highly Cited & Key Papers
Over 160 Joint Publications with Larry Coldren: PICs and also Nitride Lasers Highly Cited & Key Papers Indium tin oxide contacts to gallium nitride optoelectronic devices T. Margalith, M Hansen, SP DenBaars, LA Coldren - Applied Physics …, aip.scitation.org   Cited by 257 -(Used by Cree, Lumileds, and others) Widely tunable sampled grating DBR laser with integrated electroabsorption modulator B. Mason, GA Fish, SP DenBaars, LA Coldren - IEEE Photonics …, ieeexplore.ieee.org   Cited by 207 (Coldren group spin-outs into Agility Communications) Design of sampled grating DBR lasers with integrated semiconductor optical amplifiers …, GA Fish, LA Coldren, SP DenBaars - IEEE Photonics …, ieeexplore.ieee.org   Cited by 151  Measured and calculated radiative lifetime and optical absorption of  quantum structures …, E Zolotoyabko, AC Abare, SP Denbaars, LA Coldren - Physical Review B, APS   Cited by 147 

4 Coldren and DenBaars Group collaborated broadly in MOCVD of InP PICs
Numerous joint PhD students developed MOCVD technology for tunable lasers and SG-DBR laser: G, Fish, B. Mason, E. Skogen, J. Raring, J. Klamkin, J. Barton, M. Mashanovitch, M. Heimbuch, V. Jayaraman et al.

5 Did you know Larry Coldren also contributed to first GaN Blue Laser at UCSB 1997?
Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD J. Bowers, UK Mishra, L Coldren, S DenBaars - … Internet Journal of …, Abstract Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with lifetimes exceeding 6 hours have been demonstrated.   Cited by 127 (joint GaN students, A. Abare, M. Mack, T. Margalith)

6 Thanks for your support Larry!

Download ppt "Steven DenBaars Materials and ECE Departments"

Similar presentations

Report for China Frontier Workshop (June 22nd 2006 Beijing) Wang Zhanguo Key Lab. of Semiconductor Materials Science, Institute of Semiconductors, Chinese.

Report for China Frontier Workshop (June 22nd 2006 Beijing) Wang Zhanguo Key Lab. of Semiconductor Materials Science, Institute of Semiconductors, Chinese.
Latest development of InGaN and Short-Wavelength LD/LED/VCSEL 屠嫚琳 Man-lin Tu.

Latest development of InGaN and Short-Wavelength LD/LED/VCSEL 屠嫚琳 Man-lin Tu.
May 02002 Chuck DiMarzio, Northeastern University 10100-9-1 ECE-1466 Modern Optics Course Notes Part 9 Prof. Charles A. DiMarzio Northeastern University.

May Chuck DiMarzio, Northeastern University ECE-1466 Modern Optics Course Notes Part 9 Prof. Charles A. DiMarzio Northeastern University.
COST Action MP0805 Meeting, Istanbul, April 12-13, 2010 University of Nottingham, UK Effects of Hydrogen Irradiation on Deep Levels in MBE Grown Dilute.

COST Action MP0805 Meeting, Istanbul, April 12-13, 2010 University of Nottingham, UK Effects of Hydrogen Irradiation on Deep Levels in MBE Grown Dilute.
Hot Electron Energy Relaxation In AlGaN/GaN Heterostructures 1 School Of Physics And Astronomy, University of Nottingham, University Park, Nottingham,

Hot Electron Energy Relaxation In AlGaN/GaN Heterostructures 1 School Of Physics And Astronomy, University of Nottingham, University Park, Nottingham,
Semiconducting Light- Emitting Devices James A. Johnson 16 December 2006.

Semiconducting Light- Emitting Devices James A. Johnson 16 December 2006.
Laser etching of GaN Jonathan Winterstein Dr. Tim Sands, Advisor.

Laser etching of GaN Jonathan Winterstein Dr. Tim Sands, Advisor.
GaN based Heterojunction Bipolar Transistors

GaN based Heterojunction Bipolar Transistors
Magneto-optical study of InP/InGaAs/InP quantum well B. Karmakar, A.P. Shah, M.R. Gokhale and B.M. Arora Tata Institute of Fundamental Research Mumbai,

Magneto-optical study of InP/InGaAs/InP quantum well B. Karmakar, A.P. Shah, M.R. Gokhale and B.M. Arora Tata Institute of Fundamental Research Mumbai,
Saturated gain in GaN epilayers studied by variable stripe length technique Rui Li Journal Club, 3.05.07 Electrical Engineering Boston University J. Mickevičiusa.

Saturated gain in GaN epilayers studied by variable stripe length technique Rui Li Journal Club, Electrical Engineering Boston University J. Mickevičiusa.
Ch 6: Optical Sources Variety of sources Variety of sources LS considerations: LS considerations: Wavelength Wavelength  Output power Output power Modulation.

Ch 6: Optical Sources Variety of sources Variety of sources LS considerations: LS considerations: Wavelength Wavelength  Output power Output power Modulation.
Research Highlights – N. Pelekanos

Research Highlights – N. Pelekanos
Lecture Set No. 1 Winter 2011 ECE 162B Fundamentals of Solid State Physics Class Introduction and Crystal Structures” Prof. Steven DenBaars ECE and Materials.

Lecture Set No. 1 Winter 2011 ECE 162B Fundamentals of Solid State Physics Class Introduction and Crystal Structures” Prof. Steven DenBaars ECE and Materials.
University of California Santa Barbara 1 Future Optical Networks: Impact of Silicon Photonics John E. Bowers University of California, Santa Barbara.

University of California Santa Barbara 1 Future Optical Networks: Impact of Silicon Photonics John E. Bowers University of California, Santa Barbara.
Optical properties and carrier dynamics of self-assembled GaN/AlGaN quantum dots Ashida lab. Nawaki Yohei Nanotechnology 17 (2006) 2609-2613.

Optical properties and carrier dynamics of self-assembled GaN/AlGaN quantum dots Ashida lab. Nawaki Yohei Nanotechnology 17 (2006)
APPLIED PHYSICS LETTERS 96, , 2010

APPLIED PHYSICS LETTERS 96, , 2010
Kansas State University III-Nitride Deep Ultraviolet Photonic Materials and Structures Jingyu Lin & Hongxing Jiang DMR-0504601 Growth of III-nitride Photonic.

Kansas State University III-Nitride Deep Ultraviolet Photonic Materials and Structures Jingyu Lin & Hongxing Jiang DMR Growth of III-nitride Photonic.
Gallium Nitride https://store.theartofservice.com/the-gallium-nitride-toolkit.html.

Gallium Nitride
KM3NeTmeeting Pylos, Greece, 16-18 April 2007 1 of 12 Mar van der Hoek et al. electronic department PROGRESS ON OPTICAL MODULATORS FOR KM3NeT Mar van der.

KM3NeTmeeting Pylos, Greece, April of 12 Mar van der Hoek et al. electronic department PROGRESS ON OPTICAL MODULATORS FOR KM3NeT Mar van der.
Electrons, phonons, and photons in solids Optoelectronics Group Alex L Ivanov Department of Physics and Astronomy, Cardiff University Wales, United Kingdom.

Electrons, phonons, and photons in solids Optoelectronics Group Alex L Ivanov Department of Physics and Astronomy, Cardiff University Wales, United Kingdom.

Similar presentations

Ads by Google