1. Introduction of HV Technology and Product Naming
High Voltage, PCIA
November, 2013

2. In taking receipt of this Material, recipient acknowledges
and agrees to maintain its confidentiality and use the
Material for the sole purpose of business endeavors with
Fairchild Semiconductor.  Sharing with 3rd parties is
prohibited.

3. HV Technology & Products

4. High Voltage Product Portfolio
SPM® Products
HPM
IGBT
MOSFET
Diode
SiC
Super-Junction
MOSFET
600~800 V
SuperFET® I/II
600 V SupreMOS®
- SJNG 650 V
Motion® SPM Modules
- SPM 1 Series<10 kW
- SPM 2 Series<5 kW
- SPM 3 Series<2.2 kW
- SPM 4 Series<2.2 kW
SPM 45 LV Series<1.5 kW
SPM 45 Series<1.5 kW
- SPM 5 Series<0.1 kW
- SPM 7 Series<0.1 kW
- PFC SPM® Series
FS 600V IGBT
- 600/650 V Planar
- 650 V Trench
UF Diode
200 ~1200 V
SiC BJT
1200 V
HF Diode
600 V, 1200 V
FS 1200V IGBT
1200/1000 V
FS Trench IGBT
1000~1400 V
FS1/2 SA T IGBT
Stealth™ Diode
600 V, 1200 V
SiC Diode
MV MOS
40~150 V
PowerTrench®
MOSFET
UFT, UFP ~250 V
Duexpeed Diode 600 V
PT Trench IGBT
300 ~360 V
High Power Module (HPM)
Damper Diode
1500 V, 1600 V
HV P MOSFET
200~650 V
UniFET™ I/II MOSFET
50~1000 V
QFET® MOSFET
& CFET
& QFET® V2 Series
Legacy FET
NPT Trench IGBT
1000 V, 1200 V

5. SPM® Modules & HPM Portfolio
Application
SPM 1 Series
600 V / 50 A ~ 75 A
*1200 V / 25 A ~ 50A F1
SPM 7 Series
PQFN 12.9*12.9
500 V / ~1 A
SPM 55 Series
Full mold DIP
600 V / ~10 A
Industrial Inv. F2
Renewable
SPM 2 Series
600 V / 15 A ~ 75 A
*1200 V / 10 A ~ 35 A
System A/C
Small Industrial Inv.
& Pump
SPM 3 Series
600 V / ~ 30 A
Competitive cost
than SPM5
Optimized for
Refrigerator & W/M
Expand
Business Scope
HP Room A/C
LP Room A/C
SPM 45 Series
600 V / 5 A ~ 20 A
W/M
Power tools
SPM 45 LV Series
40 V / 40 A ~ 60 A
Refrigerator
SPM 5 Series
500 V / ~1.5 A
250 V / ~3 A
Dish washer
Small Pump
Fan motor
50 W
100 W
1 kW
2 kW
5 kW
10 kW~
Power

6. HV Package Portfolio Through-hole Type Power Discrete SMD Type
I2PAK
IPAK
TO220/TO220F
TO247
TO264
TO3P/F
TO92L
SMD
Type
D2PAK
DPAK
MLP_33S
PQFN_56P
PQFN88
SO8
SOT223
Power Module
SPM® Modules
SPM 1 Series
SPM 2 Series
SPM 3 Series
SPM 4 Series
SPM 45 Series
SPM 45 LV Series
SPM 5 Series
SPM 7 Series
HPM F1 F2
WF Biz
Wafer
Power-247
MLP-33
SO8
SOT223
SPM 5 Series ~0.1 kW
SPM 45 Series ~1.5 kW
SPM 2 Series ~5 kW
SPM 3 Series
~2.2 kW
SPM 1 Series ~10 kW
SPM 7 Series
~40W
SPM 4 Series
~3 kW F1 F2

7. HV Application by Power Range
The range of products and application expertise are broad and comprehensive enough to meet a variety of customers’ needs
1 Watt
100 Watt
1 KWatt
50 KWatt
Communication
Lighting
Small HA
Computing
Consumer
Major HA(White Goods)
Indus Motor Control
Industrial Power
With a substantial portfolio of semiconductor products, Fairchild address a broad range of solutions in power-dependent, mobile and other industries.
These industry-leading solutions include:
PowerTrench® and SupreMOS™ MOSFET technologies that achieve world-class Rds(on) and provide higher power density reducing heat sink size;
mWSaver™ technology that offers state-of-the-art standby power to support the industry's worldwide regulations that focus on reducing energy waste;
Power Factor Correction ICs that increase system efficiency.
Fairchild has leveraged its signal path expertise and is a leader in USB technology, which has become the universal interface for mobile applications.

8. Development Directions by Products
SPM® Modules
1200 V/~50 A 3-phase inverter
600 V/~75 A 3-phase inverter
250 V, 500 V/~3 A 3-phase inverter
600 V PFC/Converter module
IGBTs
Field Stop technology: Short-circuit rated IGBTs, Diode-embedded IGBTs, High speed IGBTs
MOSFETs
Super-junction technology : SuperFET® II MOSFET, SupreMOS® MOSFET, SJ NG
Shielded gate technology: PowerTrench® MOSFET, PTNG
Diodes/HVIC
Stealth™ diode with better softness factor : 600 V/1200 V
NP Diode: 150 V, 600 V
1200 V HVIC(HDJ4)
Embedded Motor Controller HVIC (HDG7, MXIC)
HPMs
Custom module for PV
Standard module
- HPM F-series (F1, F2 etc)
SiC Module
SiCs
SiC BJT : 1200 V,
1700 V
SiC Diode : 650 V,
900 V, 1200 V, 1700 V

9. Product Ordering Information

10. SPM 3 Series F S B F 15 C H 60 B T L None : Long(normal) Lead
T : Short lead
None : Normal ver.
T : Economic ver.
None : V2 Mini DIP SPM
B : V4 Mini DIP SPM with Full Pack
C : V4 Mini DIP SPM with DBC
VOLTAGE RATING (  10)
H : HIGH SWITCHING FREQUENCY
C : High dv/dt Type
CURRENT RATING
S : MINI-SPM ( SPM 3 Package with Ceramic )
F : MINI-SPM ( SPM 3 Package with Full mold )
B : MINI-SPM ( SPM 3 Package with DBC)
B : NO-THERMISTOR
S : Divided N-terminal
FAIRCHILD SEMICONDUCTOR

11. PFC SPM 3 Series F P D B 30 P H 60 B None : Version 1 B : Version 2
VOLTAGE RATING (  10)
H : HIGH SWITCHING FREQUENCY
P : Bridgeless topology
B : Conventional Boost type
CURRENT RATING
S : MINI-SPM ( SPM 3 Package with Ceramic )
F : MINI-SPM ( SPM 3 Package with Full mold )
B : MINI-SPM ( SPM 3 Package with DBC)
D : Shunt Resistor
A : NO-Shunt Resistor
P : Full switching
S : Partial switching
FAIRCHILD SEMICONDUCTOR

12. SPM 45 Series F N A 4 10 60 X X X Customer Option
No suffix : Normal Version
Lead-Forming Option
No Suffix : SPM26-AAA
(Short-lead Normal forming)
1 : SPM26-AAB
(Short-lead & double forming signal side and N terminal)
2 : SPM26-AAC
(Long-lead Normal forming)
3 : SPM26-AAD
(Long-lead & double forming
signal side)
4 : SPM26-AAE (Extra-long lead & Normal
forming)
5 ~9 : Other Lead-option
Silcon Technology
No suffix : Planar NPT IGBT
*no next suffix
B : Planar NPT IGBT
*presence of next suffix
F : Planar Field-Stop IGBT
T : Trench Field-Stop IGBT
S : SuperFET® Technology
Voltage Rating
60 : 600 V rating
Current Rating
05 : 5 A rating
10 : 10 A rating
15 : 15 A rating
20 : 20 A rating
SPM 45 Package
Product Option
Please see right table.
Suffix
Substrate
Thermister
Product Option A
Ceramic
Yes
Normal B
Fast C
Low Cost D No E F G
Product Category
N : Inverter module
P : Converter module with PFC part
M : CI module (Converter + Inverter)
Fairchild Semiconductor

13. SPM 5 Series F S B 5 02 50 X X X Lead option None : Dip T: Double Dip
S : Surface mount
B : Zigzag
Silicon version
NC : Ver. 1 (CFET)
U : Ver. 1.5 (UniFET™ I MOSFET)
UD : Ver. 1.5 (UniFET™ I MOSFET + BSD)
A : Ver (UniFET™ I MOSFET + TSU + BSD)
SF : SuperFET® MOSFET Ver (SuperFET® II MOSFET + TSU + BSD)
Voltage rating
06 : 60 V
25: 250 V
50: 500 V
Power RATING
5 : SPM 5 Series
B : Fullpackage
C : Ceramic
S : Divided Three Thermal
FAIRCHILD SEMICONDUCTOR

14. HPM : F1 & F2 Series FP F2 G 100 HB 12 A 3 (Not Released Yet.
(1) Fairchild Power Module
(2) Package Type
F1/2/3 : F1/2/3
T1/2/3/4/5 : EconoPAK1/2/3/4/5 (Terminal)
E2/3 : EconoPIM2/3 (Pin type)
(3) Module type
G: IGBT / M: MOSFET / D: Diode / J: SiC BJT / C: Custom
(4) Current Rating(x1) or System Power rating(ex. 2.5kW2P5)
(5) Topology (2 digit)
BF: Boost / TL: TNPC / NL: NPC
MF: Mixed Full-Bridge / NR: NPC Reactive control
HB: Half-Bridge (2PAK) / FB: Full-Bridge (4-PAK)
TB: 3-Phase (6-PAK) / CB: CIB (Converter Inverter Brake)
FH: FB & Heric
SB: Single Buck-Boost / DB: Double Buck-Boost
PV: Single module solution
(6) Voltage Rating (x100)
(7) Generation code
A: 1st Gen. / B: 2nd Gen. / C: 3rd Gen.
(8) Option #1; SiC Diode
blank: Si-based Diode S: SiC Diode
(9) Option #2; Pin Configulation
blank: 12mm PressFIT (default), 5: 17mm PressFIT (default)
2 : 12mm PressFIT (option), : 17mm PressFIT (option)
3 : 12mm Solder (default), : 17mm Solder (default)
4 : 12mm Solder (option), : 17mm Solder (option)
9 : Termial for T1~T5
(10) Option #3; DBC type & NTC
Blank: DBC/Al2O3 with NTC, M: DBC/Al2O3 w/o NTC
N : DBC/AlN with NTC, R : DBC/AlN w/o NTC
(11) Option #4; Suffix code
(5) Configuraton
FP F2 G 100 HB A 3
(1) Fairchild Power Module
(2) Package Type
(8) Option
#1~4
(4) Current Rating or
System Power rating
(7) Generation
(6) Voltage Rating(x100)
(3) Module type
(Not Released Yet.
First release will be customized product!)

15. Field Stop IGBT F G H 75 T 65 U P D x Option : FRD Option
Blank : Stealth™ Diode / F : Ultrafast, etc
Blank : without Diode / D : Built-in Diode
Existing or Non-existing of built-in Diode
Generation
F/FT : Gen1 / M : Gen2 / P : Gen3
Speed & Feature
S : SMPS / U : Ultrafast
L : Low VCE(sat) /
Voltage Rating ( ⅹ10)
Technology
N : Planar process
S : Shorted Anode(only for IH)
T : Trench process (cf V Gen1 : N)
Current Rating
P : TO-220 / PF : TO-220F / A : TO-3PN
AF : TO-3PF / H : TO-247 / Y : Power-247
L : TO-264 / U : I-PACK / I : I2-PACK
D : D-PACK / B : D2-PACK
Package Type
IGBT
Fairchild Semiconductor

16. PT/NPT IGBTs
F G L N A N D
Voltage Rating ( ⅹ10)
IGBT
N : NPT / NT : NPT + Trench / Blank : PT
Technology
Speed(Max Fall Time)
A : 100 ns / B : 200 ns / C : 500 ns / LS : >1 us
N : N-channel
P : TO-220 / PF : TO-220F / A : TO-3P
H : TO-247 / L : TO-264 / U : I-PACK
I : I2-PACK / D : D-PACK / B : D2-PACK
Package Type
Current Rating
Fairchild Semiconductor
Existing or Non-existing of built-in Diode
Blank : without Diode
D : Built-in Diode

17. PDP (PT) Trench IGBT F G PF 4 5 33 D xxxx Option Built-in FRD
Package Type
P : TO D: D-PAK
PF : TO-220F U: I-PAK
A : TO-3PN B: D2-PAK
AF : TO-3PF I : I2-PAK
L : TO H : TO-247
(2) Technology Generation
3 : 3rd Gen. PDP Trench IGBTs
4 : 4th Gen. PDP Trench IGBTs
(3) Die Size
5: 50 A
6: 70 A
7: 90 A
(4) Voltage Rating (x10)
33 : 330 V
36 : 360 V
60 : 600 V
(5) Option
Lead forming, Potting etc.
F G PF D xxxx
Option
Built-in FRD
Voltage Rating (x10)
Die Size
Technology Generation
Package Type
IGBT
Fairchild Semiconductor

18. SMPS & Other Legacy IGBT
HGT G N A 4 D
Option
D : Built-in Diode / S : Surface Mount
C : Current Sense / V : Voltage Clamping
Generation
1 : Gen1 2 : Gen2 3 : Gen3
4 : SMPS N : NPT
Speed(Max Fall Time at TJ=150℃)
A : 100 ns / B : 200 ns / C : 500 ns
Voltage Rating ( ⅹ10)
N : N-channel
Current Rating
Rating at TC=+75℃, 100 kHz Operation
Gen1, 2, 3 Continuous Current Rating : TC=+110℃
D : TO-251 / TO-252
1S : TO-262 / TO-263
P : TO-220
G : TO-247
Package Type
1Y : TO-264
Fairchild Semiconductor IGBT

19. HV MOSFET Overall F C H N 60 76 Forming Option Series
F : Fast recovery
U : Ultra fast recovery
Empty: Standard Product
(QFET® MOSFET/UniFET™ MOSFET/Super Junction MOSFET)
L : Logic Level Product
F : Fast Recovery MOSFET
N : New Version( 2nd of UniFET™ MOSFET, SupreMOS® MOSFET )
Z : Zener b/w G and S
C/V2 : Advanced QFET C/V2 series
Voltage Rating ( Χ 10 )
Current Rating 76
Channel Polarity
N : N-Channel
P : P-Channel
Package
A : TO-3P
B : D2-PAK
D : D-PAK
E : TO-126
H : TO-247
N : TO-92
G : 8 DIP
L : TO-264
NL : TO-92L
PF : TO-220F
T : SOT-223
Base Technology
Q : QFET® Technology
C : Super-Junction Technology
D : UniFET™ Technology
P : TO-220
S : 8-SOP
AF : TO-3PF
I : D2-PAK
U : I-PAK
Fairchild Semiconductor
Forming
Empty : normal type / T : Potting type
Series

20. Super-junction MOSFET

21. SuperFET® MOSFET and SupreMOS® MOSFET
Technology
C : Super-junction MOSFET
Package Type
P : TO D: D-PAK
PF : TO-220F U: I-PAK
A : TO-3PN B: D2-PAK
AF : TO-3PF I : I2-PAK
L : TO H : TO-247
MT : PQFN88
(3) Voltage Rating (x10) : 600 / 650 V
(4) Generation
nothing : SuperFET® MOSFET
N : SupreMOS® MOSFET
Option
F : Fast Recovery type
YDTU : lead forming
F C P N 60 x x
(5)Option
(4)Generation
(3)Voltage Rating (x10)
N: N channel
Current Rating
(2)Package Type
(1)Technology
Fairchild semiconductor

22. SuperFET® II MOSFET F C P 190 N 60 x x (5)Option (4)Generation
Technology
C : Super-junction MOSFET
Package Type
P : TO D: D-PAK
PF : TO-220F U: I-PAK
A : TO-3PN B: D2-PAK
AF : TO-3PF I : I2-PAK
L : TO H : TO-247
MT : PQFN88
(3) Voltage Rating (x10) : 600 / 650 V
(4) Generation
nothing : SuperFET® II MOSFET
Option
F : Fast Recovery type
YDTU : lead forming
(5)Option
(4)Generation
(3)Voltage Rating (x10)
N: N channel
Rds(on) max
(2)Package Type
(1)Technology
Fairchild semiconductor

23. Planar MOSFET F D D 7 N 60 N Z F (5) Body Diode Type Zener Protection
(1) Technology
Q : QFET® MOSFET,
D : UniFET™ MOSFET
(2) Package Type
P : TO-220, D : D-PAK
PF : TO-220F, U : I-PAK
A : TO-3PN, B : D2-PAK
AF : TO-3PF, I : I2-PAK
L : TO-264, H : TO-247
(3) Voltage Rating (x10) :
50: 500 V, 60: 600 V
(4) Version
C : QFET® C Series
N : UniFET™ II Series
(5) Body Diode Type
F : FRFET® Series
( trr : 80 ~ 100 ns )
U : Ultra FRFET® Series
( trr : 40 ~ 50 ns )
Tip : Normal FET
( trr : 180 ~ 200 ns )
F D D N 60 N Z F
(5) Body Diode Type
Zener Protection
(4) Version
(3) Voltage Rating (x10)
N: N channel, P: P channel
Id ( 7A )
(2) Package Type
(1) Technology
Fairchild semiconductor

24. PowerTrench® MOSFET OverallD P
030 N 10 A L7
Option
L7 : D2-PAK 7lead
PowerTrench Generation
Empty: PowerTrench 3
A: PowerTrench 5
B: PowerTrench 7
C: PowerTrench Next Generation
Voltage Rating ( × 10 )
Channel Polarity
N : N-Channel
P : P-Channel
RDS(ON) Max. [mΩ]
Package
A : TO-3P
B : D2-PAK
D : D-PAK
MS : PQFN56
H : TO-247
N : TO-92
P : TO-220
S : 8-SOP
AF : TO-3PF
PF : TO-220F
I : I2-PAK
U : I-PAK
DMOS
Fairchild

25. UltraFET Trench F D P 047 AN 08 Ax (3) Rg differentiation
(1) Package Type
P : TO D: D-PAK
PF : TO-220F U: I-PAK
A : TO-3PN B: D2-PAK
I : I2-PAK H : TO-247
MS : PQFN56
(2) Voltage Rating (x10) :
06 : 60 V
08 : 75 V
(3) Rg differentiation
A0 : Low Rg
A1 : High Rg, but mostly A0 products are avaialble
(3) Rg differentiation
(2)Voltage Rating (x10)
N: N channel
Rdson max (÷ 10)
(1)Package Type
DMOS
Fairchild semiconductor

26. PowerTrench® MOSFET F D P 030 N 06 x (3)Technology differentiation
(1) Package Type
P : TO D: D-PAK
PF : TO-220F U: I-PAK
A : TO-3PN B: D2-PAK
I : I2-PAK H : TO-247
MS : PQFN56
(2) Voltage Rating (x10) :
04: 40 V
06 : 60 V
08 : 75/80 V
10 : 100 V
15 : 150 V
(3) Technology differentiation
Null : PowerTrench 3
A : PowerTrench 5
B : PowerTrench 7, PowerTrench 8
(3)Technology
differentiation
(2)Voltage Rating (x10)
N: N channel
Rdson max (÷ 10)
(1)Package Type
DMOS
Fairchild semiconductor
Exception : FDPF3860T(100 V), FDP3205 (55 V)

27. Diode Overall Before 2004 F F P F 1 0 U 3 0 D N Since 2004
Fairchild
FRD
Package Type
P: TO-220
PF: TO-22OF
A: TO-3P
AF: TO-3PF
L: TO-264
B: D2-PAK
D: D-PAK
Current
Rating
(Per Chip)
04: 4 A
10: 10 A
Trr
Characteristics
F: Fast
U: Ultra Fast
X: Extra Fast
Voltage
Rating(*10)
60: 600 V
150: 1500 V
Chip Composition
S: Single Chip
DN: Cathode Common Dual Chip
DP: Anode Common Dual Chip
DS: Series Dual Chip
Since 2004
F F P F U P N
Fairchild
FRD
Package Type
P: TO-220
PF: TO-22OF
A: TO-3P
AF: TO-3PF
L: TO-264
B: D2-PAK
D: D-PAK
Current
Rating
(The sum of each current rating in case of Dual Chip)
04: 4 A
10: 10 A
Trr
Characteristics
F: Fast
U: Ultra Fast
X: Extra Fast
S: StealthTM II
Life Time
Control
None: Electron
Irradiation
P: Pt Diffusion
Voltage
Rating(*10)
60: 600 V
150: 1500 V
Chip Composition
None: Single Chip
N: Cathode Common
Dual Chip
P: Anode Common
DS: Series Dual Chip

28. Other Diodes
ISL9R860P2

29. twitter.com/fairchildSemi