1. SUPERSiC® SILICON CARBIDE
POCO Specialty Materials
“Material Solutions for the New Millennium”
SUPERSiC® SILICON CARBIDE

2. Exceptional growth through performance excellence.
POCO MISSION
Exceptional growth through performance excellence.
POCO Specialty Materials HEADQUARTERS
POCO VISION
To be the world’s preferred source of premium graphites, carbides, and other advanced material solutions.

3. HISTORY OF POCO
Fine particle size graphite developed; spin-off from
aerospace industry
Acquired by Pure Oil Co.
Pure merged with Union Oil Co. of California (UNOCAL)
Acquired silicon carbide (SiC) conversion technology
Poco becomes stand alone company

4. Polycrystalline, Purified Stoichiometrically Graphite Correct SiC
SUPERSiC® Conversion Process
Purified
Graphite
Polycrystalline,
Stoichiometrically
Correct SiC

5. SiO + CO SiO2 + C A TWO STEP REACTION
A purified sand is combines with purified carbon powder at
high temperature to create silicon monoxide gas and a by-
product of carbon monoxide
SiO2 + C
SiO + CO

6. In the second step, the silicon monoxide gas infiltrates into
purified graphite parts, converting them to silicon carbide
and a by-product of carbon monoxide
SiO + C
SiC + CO

7. CONVERSION CHARACTERISTICS
During the conversion the part grows
During the conversion the part picks up 67% weight
During the conversion the part changes color from black to a faded green color

8. Physical and mechanical properties:
SUPERSiC®
Physical and mechanical properties:
Direct replacement to other silicon carbides
Low density/thermal mass (2.55 g/cc)
High strength/weight ratio (at RT to 1600ºC)
High hardness
Abrasion resistant

9. SUPERSiC® Chemical properties:
Beta SiC (no binders or sintering agents)
Inert to typical semiconductor wet etch chemicals
Pure SiC (99.999%)
Stoichiometric (1:1) composition, ie. no backfill
CTE similar to many semiconductor films

10. SUPERSiC® silicon carbide
SiC Coating
A chemical vapor deposition process in which a CVD SiC coating is deposited onto a SiC surface. The coating is of uniform thickness (approximately 70 microns) and effectively eliminates the porosity of the underlying SUPERSiC® silicon carbide.
MTS + H2 + Ar  SiC + HCl

11. SUPERSiC® SILICON CARBIDE SOLUTIONS FOR THE SEMICONDUCTOR INDUSTRY
Increased film adhesion due to CTE match between silicon carbide and semiconductor films leads to longer run cycles.
Increased equipment uptime due to fewer clean cycles of silicon carbide.
Superior design flexibility and complex machining potential due to manufacturing process.

12. SUPERSiC® SILICON CARBIDE SOLUTIONS FOR THE SEMICONDUCTOR INDUSTRY (cont).
SUPERSiC® can be used at temperatures where quartz begins to sag and melt.
Increased oxidation resistance at temperatures over 500oC meets the demands of applications where graphite performance deteriorates.

13. ADVANTAGES OF SUPERSiC® silicon carbide (summary)
Design flexibility
Impervious to acid attack
High mechanical strength
Long lifetime
Reduced cleaning frequency
Low particle generation
Improved die yield
Reduced cost of ownership

14. HORIZONTAL CARRIER COST OF OWNERSHIP
SiC Quartz
CARRIER PRICE $ $125
CARRIERS/FURNACE/YEAR
CARRIER COST/YEAR $3, $12,750
REQUALIFICATION COSTS $11, $22,464
SHIPPING/HANDLING $ $1,700
CARRIER COST/FURNACE/YEAR $14, $36,914
ANNUAL COST SAVINGS/FURNACE $21,982
ASSUMPTIONS:
Throughput of 20,000 wafers/month
Process is 1275 °C N+ Drive
Due to high temperature, quartz carriers are replaced every 3 weeks
Clean consists of a weekly TGA clean for quartz and bi-weekly clean for SiC
Requalification costs are estimated from typical process requirements and BOM calculation
Cost savings do not consider the increased yields obtained based on increased equipment utilization and performance
This analysis shows only savings during the first year. During the second year the COO will continue to drop due to continued use of the SiC carriers while the quartz carriers are still replaced every 3 weeks

15. VERTICAL CARRIER COST OF OWNERSHIP
SiC Quartz
CARRIER PRICE $20, $4,000
CARRIERS/FURNACE/YEAR
CARRIER COST/YEAR $20, $32,000
REQUALIFICATION COSTS $19, $41,808
SHIPPING/HANDLING $ $800
CARRIER COST/FURNACE/YEAR $39, $74,608
ANNUAL COST SAVINGS/FURNACE $35,212
ASSUMPTIONS:
Throughput of 20,000 wafers/month
Process is 1275 °C N+ Drive
Due to high temperature, quartz carriers are replaced every 3 weeks
Clean consists of a weekly TGA clean for quartz and bi-weekly clean for SiC
Requalification costs are estimated from typical process requirements and BOM calculation
Cost savings do not consider the increased yields obtained based on increased equipment utilization and performance
This analysis shows only savings during the first year. During the second year the COO will continue to drop due to continued use of the SiC carriers while the quartz carriers are still replaced every 3 weeks