1. Date of download: 11/1/2017
Copyright © ASME. All rights reserved.
From: Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method
J. Heat Transfer. 2006;129(4): doi: /
Figure Legend:
Schematic diagram of a five-unit-cell thin film between two semi-infinite contacts. The definitions of different groups of atoms are shown. In this case, Region D includes three unit-cell layers.

2. Date of download: 11/1/2017
Copyright © ASME. All rights reserved.
From: Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method
J. Heat Transfer. 2006;129(4): doi: /
Figure Legend:
The 2D direct lattice (left) and reciprocal lattice (right) in a fcc structure. A 10×10 mesh is placed on the first Brillouin zone in the right subfigure.

3. Date of download: 11/1/2017
Copyright © ASME. All rights reserved.
From: Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method
J. Heat Transfer. 2006;129(4): doi: /
Figure Legend:
Comparison of the straining effect with the heterogeneous-material effect on phonon transmission functions across a one-unit-cell thin film at low frequencies

4. Date of download: 11/1/2017
Copyright © ASME. All rights reserved.
From: Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method
J. Heat Transfer. 2006;129(4): doi: /
Figure Legend:
Comparison of the thermal conductances of heterogeneous materials and those of homogeneous materials across a one-unit-cell thin film

5. Date of download: 11/1/2017
Copyright © ASME. All rights reserved.
From: Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method
J. Heat Transfer. 2006;129(4): doi: /
Figure Legend:
Thickness dependence of thermal conductance in the Ge∕Si∕Ge configuration. Each unit cell is 2.69Å.

6. Date of download: 11/1/2017
Copyright © ASME. All rights reserved.
From: Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method
J. Heat Transfer. 2006;129(4): doi: /
Figure Legend:
Comparison of the thermal boundary resistance across a Si∕Ge interface calculated by atomistic Green’s function method to that by the acoustic mismatch model

7. Date of download: 11/1/2017
Copyright © ASME. All rights reserved.
From: Simulation of Interfacial Phonon Transport in Si–Ge Heterostructures Using an Atomistic Green’s Function Method
J. Heat Transfer. 2006;129(4): doi: /
Figure Legend:
Comparison of the thermal conductance of Si–Ge superlattice samples with 3nm period at 200K. The experimental result is from Lee .