Presentation is loading. Please wait.

Presentation is loading. Please wait.

Device Research Conference, June 19, 2012

Published byDeborah Miller Modified over 6 years ago

Similar presentations

Presentation on theme: "Device Research Conference, June 19, 2012"— Presentation transcript:

1 Device Research Conference, June 19, 2012
Regrown Ohmic Contacts to InxGa1-xAs Approaching the Quantum Conductivity Limit Jeremy J. M. Law,a,b Andy D . Carter,a Sanghoon Lee,a Arthur C. Gossard,a,b and Mark J. W. Rodwella Department of Electrical and Computer Engineering, University of California, Santa Barbara Materials Department, University of California, Santa Barbara

2 Outline Motivation Ballistic FET Current and TLM Quantum Conductance
Process Flow Sample Structures Regrowth TLM (RGTLM) Transmission Line Measurement (TLM) Results Metal-semiconductor (TLM) Metal-semiconductor and semiconductor-channel (RGTLM) Theory Comparison Conclusion 2

3 Unmetalized Source/Drain Source/Drain–Channel
Motivation Unmetalized Source/Drain Ungated Channel Metal–Source/Drain Source/Drain–Channel Two interfaces of interest Metal–regrowth interface Regrowth–channel interface Sheet resistance of regrowth Sheet resistance of ungated region Must ascertain contribution to overall access resistance from all of above 3

4 FET Ballistic Current = TLM Quantum Conductance
Fundamental limits to contact resistance to a two-dimensional channel? Quantum limited contact resistance1, 2 equivalent to ballistic transconductance 4 1 P. M. Solomon et al., IEDM Tech. Dig., 1989, p. 405; 2 J Guo et al., IEEE Elec. Dev. Lett. 33, 525 (2012).

5 Regrowth TLM (RGTLM) Process Flow
Understand source (regrowth) to channel interface Rudimentary process flow Approximates FET structure and process flow Independent of high-k properties Four-point Kelvin measurement Epi growth Dummy Pillar Definition Regrowth 5 Planarization Isolation S/D Metalization

6 TLM Process Flow Understand metal to source (regrowth) interface
Rudimentary process flow Can be done on same die as RGTLM Four-point Kelvin measurement Epi growth Regrowth Isolation S/D Metalization 6

7 Sample Structures: TLM
InAs RG on d–doped 25 nm In0.53Ga0.47As channel InAs RG on 100 nm n+ In0.53Ga0.47As channel InAs RG on d–doped 15 nm InAs channel In0.53Ga0.47As → InAs RG on 100 nm n+ In0.53Ga0.47As channel 7

8 TLM Results InAs RG on d–doped 25 nm In0.53Ga0.47As channel
InAs RG on 100 nm n+ In0.53Ga0.47As channel Slope: 23.8 W; Intercept/2: 2.1 W–mm Slope: 7.4 W; Intercept/2: 4.6 W–mm InAs RG on d–doped 15 nm InAs channel In0.53Ga0.47As → InAs RG on 100 nm n+ In0.53Ga0.47As channel Slope: 19.3 W; Intercept/2: 3.0 W–mm Slope: 11.3 W; Intercept/2: 3.0 W–mm 8

9 Sample Structures: RGTLM
InAs RG on d–doped 25 nm In0.53Ga0.47As channel InAs RG on 100 nm n+ In0.53Ga0.47As channel In0.53Ga0.47As → InAs RG on 100 nm n+ In0.53Ga0.47As channel InAs RG on d–doped 15 nm InAs channel 9

10 Regrowth TLM Results InAs RG on d–doped 25 nm In0.53Ga0.47As channel
InAs RG on 100 nm n+ In0.53Ga0.47As channel Slope: 540 W; Intercept/2: W–mm Slope: 32 W; Intercept/2: 55.6 W–mm InAs RG on d–doped 15 nm InAs channel In0.53Ga0.47As → InAs RG on 100 nm n+ In0.53Ga0.47As channel Slope: 269 W; Intercept/2: 68.2 W–mm Slope: 15 W; Intercept/2: 12.7 W–mm 10

11 Results Summary Contact resistance to thin channels (small ns) limited by quantum conductance Low contact resistance of 12.7 W–mm (11.1 W–mm2) Contact resistance low ns channels W–mm close to theoretical 80 W–mm N+ Regrowth Composition InAs In0.53Ga0.47As → InAs Thickness 60 nm Doping 5-10×1019 cm-3 Sheet Resistivity 23.8 W 7.4 W 19.3 W 11.3 W Channel In0.53Ga0.47As 25 nm 100 nm 15 nm 9×1012 cm-2 3-5×1019 cm-3 540 W 32 W 269 W 15 W Access Resistivity 120.8 W-mm 55.6 W-mm 68.2 W-mm 12.7 W-mm Metal/Regrowth Contact Resistivity 2.1 W-mm 0.2 W-mm2 4.6 W-mm 1.5 W-mm2 3.0 W-mm 0.4 W-mm2 0.8 W-mm2

12 Conclusion Ballistic FET current equivalent to quantum conductance of TLM Should not add to FET contact resistance Material independent, i.e. true for all semiconductor materials Metal–regrowth contact resistance is small portion of overall Rc ~ 3.0 W–mm (1.0 W–mm2) Regrown ohmic contacts (136 W–mm) within a factor of 2 of theoretical 80 W–mm 12.7 W–mm (11.1 W–mm2) is true measure of interface properties This includes regrowth to channel and metal to regrowth 12

13 Backup slides

14 MBE Regrowth by Migration Enhance Epitaxy (MEE)
InAs Quasi MEE In, As, and Si shutters open As shutter open InGaAs Quasi MEE In, Ga, As, and Si shutters open As shutter open 14

15 MBE Regrowth: Close to 2-D Quantum conductivity Limit:
15

Download ppt "Device Research Conference, June 19, 2012"

Similar presentations

IEEE Device Research Conference, June , Notre Dame

IEEE Device Research Conference, June , Notre Dame
Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Field effect transistors.

Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Field effect transistors.
Improved Migration-Enhanced Epitaxy for Self-Aligned InGaAs Devices Electronic Materials Conference (EMC), 6-25-2009 Mark A. Wistey University of California,

Improved Migration-Enhanced Epitaxy for Self-Aligned InGaAs Devices Electronic Materials Conference (EMC), Mark A. Wistey University of California,
Carbon nanotube field effect transistors (CNT-FETs) have displayed exceptional electrical properties superior to the traditional MOSFET. Most of these.

Carbon nanotube field effect transistors (CNT-FETs) have displayed exceptional electrical properties superior to the traditional MOSFET. Most of these.
Electrical Techniques MSN506 notes. Electrical characterization Electronic properties of materials are closely related to the structure of the material.

Electrical Techniques MSN506 notes. Electrical characterization Electronic properties of materials are closely related to the structure of the material.
2007 DRC Ultra Low Resistance Ohmic Contacts to InGaAs/InP Uttam Singisetti*, A.M. Crook, E. Lind, J.D. Zimmerman, M. A. Wistey, M.J.W. Rodwell, and A.C.

2007 DRC Ultra Low Resistance Ohmic Contacts to InGaAs/InP Uttam Singisetti*, A.M. Crook, E. Lind, J.D. Zimmerman, M. A. Wistey, M.J.W. Rodwell, and A.C.
1 InGaAs/InP DHBTs demonstrating simultaneous f t / f max ~ 460/850 GHz in a refractory emitter process Vibhor Jain, Evan Lobisser, Ashish Baraskar, Brian.

1 InGaAs/InP DHBTs demonstrating simultaneous f t / f max ~ 460/850 GHz in a refractory emitter process Vibhor Jain, Evan Lobisser, Ashish Baraskar, Brian.
1 Uttam Singisetti*, Man Hoi Wong, Jim Speck, and Umesh Mishra ECE and Materials Departments University of California, Santa Barbara, CA 2011 Device Research.

1 Uttam Singisetti*, Man Hoi Wong, Jim Speck, and Umesh Mishra ECE and Materials Departments University of California, Santa Barbara, CA 2011 Device Research.
1 Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth Uttam Singisetti*, Man Hoi Wong, Sansaptak Dasgupta, Nidhi,

1 Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth Uttam Singisetti*, Man Hoi Wong, Sansaptak Dasgupta, Nidhi,
NAMBE 2010 Ashish Baraskar, UCSB 1 In-situ Iridium Refractory Ohmic Contacts to p-InGaAs Ashish Baraskar, Vibhor Jain, Evan Lobisser, Brian Thibeault,

NAMBE 2010 Ashish Baraskar, UCSB 1 In-situ Iridium Refractory Ohmic Contacts to p-InGaAs Ashish Baraskar, Vibhor Jain, Evan Lobisser, Brian Thibeault,
DRC 2009 1 0.37 mS/  m In 0.53 Ga 0.47 As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain Uttam Singisetti*, Mark A. Wistey, Greg.

DRC mS/  m In 0.53 Ga 0.47 As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain Uttam Singisetti*, Mark A. Wistey, Greg.
IPRM 2010 Ashish Baraskar 1 High Doping Effects on in-situ Ohmic Contacts to n-InAs Ashish Baraskar, Vibhor Jain, Uttam Singisetti, Brian Thibeault, Arthur.

IPRM 2010 Ashish Baraskar 1 High Doping Effects on in-situ Ohmic Contacts to n-InAs Ashish Baraskar, Vibhor Jain, Uttam Singisetti, Brian Thibeault, Arthur.
Ashish Baraskar 1, Mark A. Wistey 3, Evan Lobisser 1, Vibhor Jain 1, Uttam Singisetti 1, Greg Burek 1, Yong Ju Lee 4, Brian Thibeault 1, Arthur Gossard.

Ashish Baraskar 1, Mark A. Wistey 3, Evan Lobisser 1, Vibhor Jain 1, Uttam Singisetti 1, Greg Burek 1, Yong Ju Lee 4, Brian Thibeault 1, Arthur Gossard.
2010 Electronic Materials Conference Ashish Baraskar June 23-25, 2010 – Notre Dame, IN 1 In-situ Ohmic Contacts to p-InGaAs Ashish Baraskar, Vibhor Jain,

2010 Electronic Materials Conference Ashish Baraskar June 23-25, 2010 – Notre Dame, IN 1 In-situ Ohmic Contacts to p-InGaAs Ashish Baraskar, Vibhor Jain,
Week 8b OUTLINE Using pn-diodes to isolate transistors in an IC

Week 8b OUTLINE Using pn-diodes to isolate transistors in an IC
1 InGaAs/InP DHBTs in a planarized, etch-back technology for base contacts Vibhor Jain, Evan Lobisser, Ashish Baraskar, Brian J Thibeault, Mark Rodwell.

1 InGaAs/InP DHBTs in a planarized, etch-back technology for base contacts Vibhor Jain, Evan Lobisser, Ashish Baraskar, Brian J Thibeault, Mark Rodwell.
1 Interface roughness scattering in ultra-thin GaN channels in N-polar enhancement-mode GaN MISFETs Uttam Singisetti*, Man Hoi Wong, Jim Speck, and Umesh.

1 Interface roughness scattering in ultra-thin GaN channels in N-polar enhancement-mode GaN MISFETs Uttam Singisetti*, Man Hoi Wong, Jim Speck, and Umesh.
1 In 0.53 Ga 0.47 As MOSFETs with 5 nm channel and self-aligned source/drain by MBE regrowth Uttam Singisetti PhD Defense Aug 21, 2009 *

1 In 0.53 Ga 0.47 As MOSFETs with 5 nm channel and self-aligned source/drain by MBE regrowth Uttam Singisetti PhD Defense Aug 21, 2009 *
Lecture 19 OUTLINE The MOSFET: Structure and operation

Lecture 19 OUTLINE The MOSFET: Structure and operation
87 GHz Static Frequency Divider in an InP-based Mesa DHBT Technology S. Krishnan, Z. Griffith, M. Urteaga, Y. Wei, D. Scott, M. Dahlstrom, N. Parthasarathy.

87 GHz Static Frequency Divider in an InP-based Mesa DHBT Technology S. Krishnan, Z. Griffith, M. Urteaga, Y. Wei, D. Scott, M. Dahlstrom, N. Parthasarathy.

Similar presentations

Ads by Google