1. Project Proposal on "Device and nanotechnology".
submitted by
B.Aswini
N.Jeevitha
IFET college of Engineering,Villupuram, Tamilnadu, India.
5/19/2018

2. Device and nanotechnology
ANALYTICAL MODELING OF DUAL MATERIAL JUNCTIONLESS SURROUNDING – GATE TRANSISTOR IN HEMT
By,
B.ASWINI
N.JEEVITHA

3. INTRODUCTION
HEMT is a field effect transistor incorporating a junction between two materials with different band gaps as the channel.
By using GaAs instead of Si, higher electron mobility
is available and furthermore GaAs can be operated at
higher temperatures. Since no diffusions are involved
in close geometrical tolerances can be achieved and
the MOSFET can be made very small.

4. DUAL MATERIAL JUNCTIONLESS SURROUNDING GATE TRANSISTOR
METAL 1
METAL 2
Source
Drain

5. Energy level diagram

6. DUAL MATERIAL JUNCTIONLESS SURROUNDING GATE TRANSISTOR
In dual material junction-less surrounding gate transistor, we are reducing the size of the transistor and we get the junctionless transistor.
To overcome that we are changing MOSFET into cylindrical shape.
Mobility of electrons will be reduced in this process.

7. DUAL MATERIAL JUNCTIONLESS SURROUNDING GATE TRANSISTOR IN HEMT
The High Electron Mobility Transistor (HEMT) is an
important device for high speed, high frequency,
digital circuits and microwave circuits with low noise
Applications.

8. ENERGY LEVEL DIAGRAM FOR HEMT

9. CONCLUSION
HEMT will contains many layers. As like a MOSFET we have to change HEMT into cylindrical shape.
By changing the HEMT there will be increase in electron mobility.
Due to high electron mobility there will be high current flow.