1. Fabrication Process terms
Oxidation-
The silicon wafers are stacked up in a quartz boat and then inserted into quartz furnace tube .
The silicon wafers are raised to a temperature in the range of 950 to 1150degreeC. And at the same time exposed to a gas containing O2 or H2O or both.This oxidation process is called thermal oxidation because high temp. is maintained to grow the oxide layer.
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2. Continued…. Epitaxial growth
Epitaxy means to grow high purity layers of controlled thickness with accurate dopant concentration distributed throuhout the layer.
The layers of such high purity grown by chemical reaction is known as Epitaxial growth.
Diffusion
The impurities (p-type or n-type) are inserted in substrate to form n-region or p region using P+ mask is known as diffusion.

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Continued--
Deposition
A multitude of layers of different materials have to be de
posited during the IC fabrication process.
Ion- Implantation
This technique is used to introduce impurities in silicom wafer.
In this process a beam of high dopant are accelerated in vacuum chamber by energing between 20 to 250kv.
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