1. Seminar Paper review
報告者: W. C. Jian

2. Improved performance of 325-nm emission AlGaN ultraviolet light emitting diodes
A. Chitnis, J. P. Zhang, V. Adivarahan, M. Shatalov, S. Wu, R. Pachipulusu, V. Mandavilli, and M. Asif Khan
Appl. Phys. Lett., Vol. 82, No. 16, 21 April 2003

3. Room-temperature operation at 333 nm of Al0. 03Ga0. 97N/Al0. 25Ga0
Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
A. Kinoshita, H. Hirayama, M. Ainoya, and Y. Aoyagi
Appl. Phys. Lett., Vol. 77, No. 2, 10 July 2000

4. Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
Hideki Hirayama, Yusuke Tsukada, Tetsutoshi Maeda, and Norihiko Kamata
Applied Physics Express 3 (2010)

5. Thanks for your attention