1. 3506-D WEST LAKE CENTER DRIVE,
RFID
( Summary )
Prototype Express
3506-D WEST LAKE CENTER DRIVE,
SANTA ANA, CA U.S.A. Tel.: (714) Fax: (714)

2. Typical RFID Applications
Asset Protection
Vehicle Identification
Access Control
Electronic Article
Surveillance
Production Control
Livestock Tracking
11/12/2005

3. Digital Logic & Control
Passive RF Tags
Memory (EEPROM)
Digital Logic & Control
RF antenna
Limited range: <1m (frequency dependent)
Communication & power from interrogator RF beam
11/12/2005

4. Digital Logic & Control
Semi-passive RF Tags
Memory (EEPROM)
Battery
Digital Logic & Control
RF antenna
Greater range: 10m
10 yr. Life
“Self-powered” uses interrogator RF beam for wake-up and communication
11/12/2005

5. Active RF Tags Greatest range: 100s of m
Sensors
Memory (EEPROM)
RF & Digital Circuitry
RF antenna
Battery
Greatest range: 100s of m
Life battery limited (exchange)
“Self-powered” can operate and transmit autonomously
11/12/2005

6. Range Limitations Vs. Tag Type
Voltage received at tag
Backscattered power level at reader
Received power at tag & reader
11/12/2005

7. Dual Mode Structure (Passive, Semi-passive)
Semi-passive part
VDD-ACT is connected to battery (applied to Semi-passive circuits)
Passive part
VDD-PAS is extracted from RF field (applied to passive circuits)
Common VDD
Is connected to either battery or VDD-PAS (depends on the operating mode)
Applied to digital part and common circuits such as clock generator and BGR
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8. RFID Block Diagram
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9. RFID Features
ISO part 1 (2.45 GHz) and ISO type B (UHF) compliant
Passive and semi-passive modes
Contactless read and write
64 Bytes EEPROM organized in 32 * 16 bits
Support for Multiple Tags (Anti-collision)
48 bytes of user programmable memory
Unique 64-bit tag ID
Block write protection
20-40 kbit/s read data rate (Manchester format)
High-speed anti-collision algorithm for reading and writing
2-pad connections for external antenna circuit (passive mode)
4-pad connections for external antenna and battery (semi-passive mode)
Data Transmission by ASK Modulation
Long read range operation (semi-passive)
Frequency independent: Typically used at UHF and 2.45 GHz
Low voltage operation - down to 1.5 V
-40 to +85°C operating temperature range
Stand-by mode with field sniffing (semi-passive)
Very low power CMOS design
11/12/2005

10. General Specifications
Protocol
ISO part 1 / ISO type B
User Memory
48 bytes (user area)
Memory type
64-byte EEPROM organized in 32 words of 16 bits
Communication frequency
2.45 GHz / UHF
Data retention
10 years
Number of overwrites
100,000 times for each address
Ambient temperature in operation
-40°C to 85°C
Modes of operation
Dual mode: passive and semi-passive (battery-assisted)
Die size
< 2 mm2 (now) , <1.5 mm2 (Next Si) either passive or semi-passive in 0.35µm technology
11/12/2005

11. Specs of Some Blocks Envelope (peak) detector
Operating at 2.45GHz
Ultra low power (500nA)
Detects very small signals (10mV)
Demodulator (which detects sub-mV signals) including
Ultra low power (500nA), high gain (54dB) but low frequency (100kHz) amplifier
Ultra low power comparator (<500nA)
Ultra low power offset canceller (250nA) which cancels sub-mV offsets
11/12/2005

12. Specs of Some Blocks Bias circuit and Band gap reference
Ultra low power bias circuit with 50nA reference currents
Very low power Band gap reference (500nA)
Low power and low frequency oscillator
Typical frequency of 640kHz
Low power (1uA)
Fully controllable bias and oscillator circuit for power consumption reduction
Innovative idea in DC extraction circuits (using less stages to extract same power)
New ideas in passive circuits such as power-on-reset, demodulator and other circuits
11/12/2005

13. Digital Architecture
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14. Advantages and Differentiations
Ultra low power circuits full operation)
Using turn on/off method to reduce power cons.
Innovative demodulating and clock/data recovery techniques
Easily customizable for customer's needs
Dual mode operation (passive and semi-passive)
11/12/2005

15. Operating Characteristics
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Operation temperature TA
-40 25 85
 C
Passive
RF voltage level
Vin
0.4 1 Vp
Operating Voltage
Xdc
1.5
1.8
3.6 V
Current consumption
Idd 3 5 8 uA
Semi-passive
mVp
Vdd 12
Vdd = 2 V
11/12/2005

16. Electrical Characteristics
VDD= 2.0V, TA=+25°C (unless otherwise stated)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Operating voltage
VDD or Xdc
Vpon
3.6 V
Current consumption
Idd
(semi-passive)
5.0 15 uA
Power On Reset Rise
1.2
1.5
1.8
Power On Reset Fall
Vpoff
1.0
1.3
1.6
Oscillator frequency
Fosc
Over full voltage and temperature range
250
450
650
KHz
Carrier frequency
FRF
500
2450
3000
MHz
Bit rate BR 20 32 40
Kb/s
Bit Rate Accuracy
 5
 15 %
EEPROM (Memory) Writing Time Tw 4 5 8
mSec
Receive to Transmit Turn Around Time (Quiet time) Tq
programmable 16 31
1/(Bit Rate)
11/12/2005

17. Road Map and Schedule
ISO compatible RFID chip with sensor interface
EPCglobal Gen 2 compliant RFID chip with sensor interface
EPCglobal Gen 2 compliant RFID chip with custom built-in sensors
RFID Road Map
Single chip
ISO+
Sensor
interface
EPC G2
+Sensor
interface
EPC G2
+Sensor 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q
2005
2006
11/12/2005

18. Our Target is … License our existing IC design technology
License the design of our reader
Modify existing protocols and develop proprietary protocols for customers with additional security requirements
Supply chips, label type RFIDs, rugged RFIDs
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19. Thanks
11/12/2005