1. Welcome to CRYSYS The leading supplier of high quality GaAs substrates
Shinsung C&T Inc.
Namdong Industrial Complex
Nonhyun-Dong, Namdong-Gu
Incheon, , KOREA T) F) )

2. Who is CRYSYS? History Business 6N &7N Polycrystalline GaAs synthesis
3/2014 : Separate from Shinsung C&T
4/2014 : Establish new company
Seoul
[Korea map]
Plant
(Incheon)
Business
- GaAs wafer : 2”, 2.5”, 3”, 4”
 Semi-conducting (SC)
 Semi-insulating (SI)
- GaAs polycrystalline
6N &7N Polycrystalline GaAs synthesis
by VGF method
- GaAs ingot

3. Gallium Arsenide - A Very Special Material
GaAs conducts electrons with high velocity and can easily transform electrical current into light.
Speed + Luminescence
GaAs substrates :
- Used for high frequency applications, such as amplifiers, receivers and switches
in mobile phones and wireless networks
- LEDs help to save valuable electricity in solid state lamps
- Semiconductor laser (LD) : To play DVDs

4. GaAs Wafer Applications

5. Carrier concentration Orientation /Off orientation
Products
(GaAs ingot)
(GaAs polycrystalline)
Parameter
Unit
2” wafer
3” wafer
4” wafer
Growth method
VGF
Dopant Si
Si, Undoped
Carrier concentration
/cm3
(0.05~4)x1018
(0.1~4)x1018
EPD
/cm2
< 500
< 500, < 3,000
Orientation /Off orientation
Upon request

6. Wafer Specifications (SC Type)
Parameter
Unit
Diameter 2” 3”
100 mm
Growth method
VGF
Dopant Si
Conductivity type N
Carrier Concentration
/cm3
(0.05~4)×1018
(0.1~4)×1018
Resistivity
·cm
(15~0.8)×10-3
Mobility
cm2/Vs
(3.5~1.5)×103
EPD Average
/cm2
< 3102
< 1103 mm
50.8  0.5
76.2  0.5
100  0.5
Thickness m
(240~400)  25
(300~625)  25
(350~625)  25
Orientation
(1,0,0)  0.5
Off orientation
Upon request
Major flat length
16.0  1.5
22.2  1.5
32.5  1.5
Minor flat length
7.0  1.5
11.2  1.5
18  1.5
TTV 5
Bow 10
Warp
Laser marking
Polished surface
P/P, P/E, As-cut

7. Wafer Specifications (SI Type)
Parameter
Unit
Diameter 2” 3”
100 mm
Growth method
C-controlled VGF
Dopant
None
Carrier Concentration
/cm3
N/A
Resistivity
·cm
> 1×107
Mobility
cm2/Vs
> 6,000
EPD Average
/cm2
< 3,000
< 5,000 mm
50.8  0.5
76.2  0.5
100  0.5
Thickness m
(300~450)  25
(350~625)  25
625  25
Orientation
(1,0,0)  0.5
Off orientation
Upon request
Major flat length
16  15
22.2  1.5
32.5  1.5
Minor flat length
7  1.5
11.2  1.5
18  1.5
TTV 5
TIR
Bow 7 10
Warp
Laser marking
Polished surface
P/P, P/E, As-cut

8. Manufacturing Process
GROWING
SHAPING
SLICING
EDGE GRINDING
LAPPING
ETCHING
ETCHED STORE
POLISHING
CLEANING
INSPECTION
PACKING
F/G STORE
SHIPPING
CHARGE
PREPARATION
CROPPING
GRINDING
INGOT STORE

9. Crystal Growth Technology
VGF : Vertical Gradient Freeze
Lowest possible temperature gradient
• Home-made, fully automated VGF furnace
• Furnace design and process development
supported by advanced numerical simulation
• Perfect diameter control due to crucible
- (2 inch ~ 6 inch)
• Outstanding radial symmetry, Low axial and
radial temperature gradients (below 1 K/cm)
• Lowest defect density available
- Lower than 100/cm2 for 3, 4 inch SC wafer
- 3,000/cm2 for 100 mm SI wafer

10. Comparison of Growth Methods
VGF
LEC HB
Wafer Size
2” ~ 6”
3” ~ 6”
~ 2.5”
Etch Pit Density
Very low
High
Low
Residual Strain
Carbon Control
Good -
Stoichiometry/EL2 Control
Moderate
Poor
Equipment Cost
Labor Cost
Amount of Waste Material

11. Competitive Background
Cost and Quality Competitive
• Automated, home made VGF furnace
- Very low equipment cost and labor cost
- Reduction of infrastructure cost
(Electric power, Waste water etc.)
- Yield improvements of crystal growth
• World best crystal quality
- Lowest Etch Pit Density (EPD)
- Uniformity of electrical parameters on ingot and wafer
• Improved wafer manufacturing technology
(VGF Furnace)

12. Progress of Wafer Production
20,000
40,000
6,000
8,000
100,000
Y2014
Y2015
Y2016
Y2017
Y2018
Yearly, avg. 32% Capa. Up
Unit : Slice/month

13. Technical Roadmap 2014 2015 2016 2017 2”, 3”, 4” 6” 8”
Wafer Size
2”, 3”, 4” 6” 8”
Applications
Opto-Electronics
(LED, LD, Solar cell)
Micro-Electronics
(Digital IC, Analog IC:GaAs MMIC)
Wafer Type
Semi-Conducting
Semi-Insulating
Wafer
Description
GaAs
Sapphire
InP, GaN