1. Hyun-Tak Power Transistor(HTR) http://www.mobrik.co.kr MOBRIK Co., Ltd 2016 HTR20100 Power Transistor SOT-223 HTR 20100 NPN, 2.0A B C E Hyun-Tak Transistor (HTR) designed to reduce heat generation is a power transistor (TR) fabricated by hybridization of a power- transistor chip (master) and a MITR (CTS+ Slave TR) as a function of heat sink instead of aluminum plate; MITR (CTS + Slave TR) is composed with a low power transistor and an MIT (metal- insulator transition) device. As for operation of the HTR, below a critical MIT temperature T c  82 o C, the master TR runs and, above T c, the master and the slave TR’s are operated together. Over T c, temperature of the master TR decreases by the decrease of current of the master TR and a decreased current is compensated by the slave TR in the MITR. When base voltage is increased to obtain a high current, the conducting channel widens at lower than T c. This prevents HTR from the increase of temperature. Limitation Conditions Characteristics  High heat-dissipation efficiency  Larger current gain  Stable at a high temperature  Smaller size than a conventional power transistor  Difficult to generate thermal runaway Uses  Driver of power LED  Driver for Li-ion charging  Driver of Motors SymbolParameterValueUnits V CBO Collector-Base Breakdown Voltage140V V CEO Collector-Emitter Breakdown Voltage100V V EBO Emitter-Base Breakdown Voltage9V ICIC Collector Current2A IBIB Base Current120mA PDPD Power Dissipation2W SymbolParameterTest ConditionMin.Max.Units V CEO Collector-Emitter Sustaining VoltageI C = 10 mA, I B = 0600V I CEO Collector Cut-off Current100nA I CES Collector Cut-off Current100nA I EBO Emitter Cut-off Current100nA h FE DC Current GainV CE = 1 V, I C = 0.1 A140 V CE(sat) Collector-Emitter Saturation Voltageh FE = 40, I C = 2.5 A7V V BE(sat) Base-Emitter Saturation VoltageI C = 1.3 A, I B = 50 mA0.5V TjTj Operating junction temperature range-65 to +150 ℃ Electrical Characteristics

2. Hyun-Tak Power Transistor(HTR) http://www.mobrik.co.kr MOBRIK Co., Ltd 2016 HTR20100 Power Transistor V CE vs I C I C vs V CE(SAT) I C vs h FE I C V BE(SAT) I C vs V BE(ON) Typical Characteristics

3. Hyun-Tak Power Transistor(HTR) http://www.mobrik.co.kr MOBRIK Co., Ltd 2016 HTR20100 Power Transistor Test Circuit Typical Characteristics (continued)

4. Hyun-Tak Power Transistor(HTR) http://www.mobrik.co.kr MOBRIK Co., Ltd 2016 HTR20100 Power Transistor Package Dimensions Contacts -Tel: +82-42-342-7406 -E-mail: clare.son@mobrik.co.kr Website http://www.mobrik.co.kr Address 34129, 4F-406, Convergence Technology Research Center, ETRI, 218, Gajeong-ro, Yuseong-gu, Daejeon, Korea