Presentation is loading. Please wait.

Presentation is loading. Please wait.

Advance Nano Device Lab. Fundamentals of Modern VLSI Devices 2 nd Edition Yuan Taur and Tak H.Ning 0 Ch10. Silicon-on-Insulator Devices.

Published byKathlyn Dixon Modified over 8 years ago

Similar presentations

Presentation on theme: "Advance Nano Device Lab. Fundamentals of Modern VLSI Devices 2 nd Edition Yuan Taur and Tak H.Ning 0 Ch10. Silicon-on-Insulator Devices."— Presentation transcript:

1 Advance Nano Device Lab. Fundamentals of Modern VLSI Devices 2 nd Edition Yuan Taur and Tak H.Ning 0 Ch10. Silicon-on-Insulator Devices

2 Advance Nano Device Lab. 1 Ch10.1 SOI CMOS

3 Advance Nano Device Lab. SOI CMOS 2

4 Advance Nano Device Lab. Partially Depleted SOI MOSFETs 3

5 Advance Nano Device Lab. Fully Depleted SOI MOSFETs 4

6 Advance Nano Device Lab. Fully Depleted SOI MOSFETs 5

7 Advance Nano Device Lab. Fully Depleted SOI MOSFETs 6

8 Advance Nano Device Lab. 7 Ch10.2 Thin-Silicon SOI Bipolar

9 Advance Nano Device Lab. Thin-Silicon SOI Bipolar 8

10 Advance Nano Device Lab. Thin-Silicon SOI Bipolar 9

11 Advance Nano Device Lab. Fully Depleted Collector Mode 10

12 Advance Nano Device Lab. Fully Depleted Collector Mode 11

13 Advance Nano Device Lab. Partially Depleted Collector Mode 12

14 Advance Nano Device Lab. Accumulation Collector Mode 13

15 Advance Nano Device Lab. Accumulation Collector Mode 14

16 Advance Nano Device Lab. 15 Ch10.3 Double-Gate MOSFETs

17 Advance Nano Device Lab. An Analytic Drain Current Model for Symmetric DG MOSFETs 16

18 Advance Nano Device Lab. An Analytic Drain Current Model for Symmetric DG MOSFETs 17

19 Advance Nano Device Lab. An Analytic Drain Current Model for Symmetric DG MOSFETs 18

20 Advance Nano Device Lab. An Analytic Drain Current Model for Symmetric DG MOSFETs 19

21 Advance Nano Device Lab. An Analytic Drain Current Model for Symmetric DG MOSFETs 20

22 Advance Nano Device Lab. The Scale Length of Double-Gate MOSFETs 21

23 Advance Nano Device Lab. Fabrication Requirements and Challenges of DG MOSFETs 22

24 Advance Nano Device Lab. Multiple-Gate MOSFETs 23

25 Advance Nano Device Lab. Multiple-Gate MOSFETs 24

Download ppt "Advance Nano Device Lab. Fundamentals of Modern VLSI Devices 2 nd Edition Yuan Taur and Tak H.Ning 0 Ch10. Silicon-on-Insulator Devices."

Similar presentations

Lecture Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FET) MOSFET Introduction 1.

Lecture Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FET) MOSFET Introduction 1.
1 PIDS 7/1/01 18 July 2001 Work In Progress – Not for Publication P. Zeitzoff Contributors: J. Hutchby, P. Fang, G. Bourianoff, J. Chung, Y. Hokari, J.

1 PIDS 7/1/01 18 July 2001 Work In Progress – Not for Publication P. Zeitzoff Contributors: J. Hutchby, P. Fang, G. Bourianoff, J. Chung, Y. Hokari, J.
Silicon on Insulator Advanced Electronic Devices Karthik Swaminathan.

Silicon on Insulator Advanced Electronic Devices Karthik Swaminathan.
Advance Nano Device Lab. Fundamentals of Modern VLSI Devices 2 nd Edition Yuan Taur and Tak H.Ning 0 Ch9. Memory Devices.

Advance Nano Device Lab. Fundamentals of Modern VLSI Devices 2 nd Edition Yuan Taur and Tak H.Ning 0 Ch9. Memory Devices.
CONTENTS 1. History 2. FET Definition 3. FET operation

CONTENTS 1. History 2. FET Definition 3. FET operation
EE130/230A Discussion 12 Peng Zheng 1. Velocity Saturation Velocity saturation limits I Dsat in sub-micron MOSFETS Simple model: E sat is the electric.

EE130/230A Discussion 12 Peng Zheng 1. Velocity Saturation Velocity saturation limits I Dsat in sub-micron MOSFETS Simple model: E sat is the electric.
Metal Oxide Semiconductor Field Effect Transistors

Metal Oxide Semiconductor Field Effect Transistors
ECE 6466 “IC Engineering” Dr. Wanda Wosik

ECE 6466 “IC Engineering” Dr. Wanda Wosik
COMPACT MODEL FOR LONG-CHANNEL SYMMETRIC DOPED DG COMPACT MODEL FOR LONG-CHANNEL SYMMETRIC DOPED DG Antonio Cerdeira 1, Oana Moldovan 2, Benjamín Iñiguez.

COMPACT MODEL FOR LONG-CHANNEL SYMMETRIC DOPED DG COMPACT MODEL FOR LONG-CHANNEL SYMMETRIC DOPED DG Antonio Cerdeira 1, Oana Moldovan 2, Benjamín Iñiguez.
Lateral Asymmetric Channel (LAC) Transistors

Lateral Asymmetric Channel (LAC) Transistors
Gain medium Incoherent Light Coherent Light ECE 663 Transistor/switch/amplifier – a 3 terminal device Source Drain Gate Valve Artery Vein Emitter Collector.

Gain medium Incoherent Light Coherent Light ECE 663 Transistor/switch/amplifier – a 3 terminal device Source Drain Gate Valve Artery Vein Emitter Collector.
Advance Nano Device Lab. Fundamentals of Modern VLSI Devices 2 nd Edition Yuan Taur and Tak H.Ning 0 Ch5. CMOS Performance Factors.

Advance Nano Device Lab. Fundamentals of Modern VLSI Devices 2 nd Edition Yuan Taur and Tak H.Ning 0 Ch5. CMOS Performance Factors.
SOI BiCMOS  an Emerging Mixed-Signal Technology Platform

SOI BiCMOS  an Emerging Mixed-Signal Technology Platform
CMPE 118 MECHATRONICS Digital I/O Transistors and Mosfets.

CMPE 118 MECHATRONICS Digital I/O Transistors and Mosfets.
Spring 2007EE130 Lecture 43, Slide 1 Lecture #43 OUTLINE Short-channel MOSFET (reprise) SOI technology Reading: Finish Chapter 19.2.

Spring 2007EE130 Lecture 43, Slide 1 Lecture #43 OUTLINE Short-channel MOSFET (reprise) SOI technology Reading: Finish Chapter 19.2.
Analytical 2D Modeling of Sub-100 nm MOSFETs Using Conformal Mapping Techniques Benjamin Iñiguez Universitat Rovira i Virgili (URV), Tarragona, E-43001,

Analytical 2D Modeling of Sub-100 nm MOSFETs Using Conformal Mapping Techniques Benjamin Iñiguez Universitat Rovira i Virgili (URV), Tarragona, E-43001,
For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201- 44494-1. © 2002.

For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.
Introduction to CMOS VLSI Design Lecture 3: CMOS Transistor Theory David Harris Harvey Mudd College Spring 2004 from CMOS VLSI Design A Circuits and Systems.

Introduction to CMOS VLSI Design Lecture 3: CMOS Transistor Theory David Harris Harvey Mudd College Spring 2004 from CMOS VLSI Design A Circuits and Systems.
For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201- 44494-1. © 2002.

For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.
EE105 Fall 2007Lecture 27, Slide 1Prof. Liu, UC Berkeley Lecture 27 ANNOUNCEMENTS Regular office hours will end on Monday 12/10 Special office hours will.

EE105 Fall 2007Lecture 27, Slide 1Prof. Liu, UC Berkeley Lecture 27 ANNOUNCEMENTS Regular office hours will end on Monday 12/10 Special office hours will.

Similar presentations

Ads by Google